US4607243A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Complex capacitive impedance with a voltage follower circuit
Assignee: Alcatel Lucent NV
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Filing: 1984-09-21
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Granted: 1986-08-19
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Expires: 2004-09-21
Abstract
Abstract A complex capacitive impedance (Z) whose capacitance value is considerably larger than the total capacitance of the components used in it is implemented by connecting a capacitive impedance (Z3) in series with a first resistor (R1) to form a voltage divider, and bypassing the first resistor (R1) with a voltage follower circuit (SFS).
Inventors
- 👤 Benno Dreier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:16
CPC Classifications
H; H03; H03H; H03H11/00; H03H11/02; H03H11/28; H03H11/46; H03H11/48; H03H11/483
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
228 words
A complex capacitive impedance comprising: a first node (e); a first resistor (R1) having one end connected to said node; a capacitive impedance (Z3) connected in a series between the other end of said first resistor (R1) and a second node (A) such that said capacitive impedance (Z3) and said first resistor (R1) form a voltage divider; a voltage follower circuit (SFS) connected to said first node and in parallel with said first resistor (R1), said voltage follower circuit comprising an operational amplifier (OPI), the noninverting input of said operational amplifier being connected to a second node (G) located between the other end of said first resistor (RI) and said capacitive impedance and the inverting input of said operational amplifier being connected by a shunt wire to the output of said operational amplifier, and a second resistor (R2, R5) connected at one end to said first node and at the other end to the output of said operational amplifier, wherein said capacitive impedance (Z3) comprises a combination of a third resistor (R4) in a series with a combination of a fourth resistor (R3) and a capacitor (C3), wherein said fourth resistor (R3) is made having a large enough value that said capacitor (C3) has a value considerably lower than that total capacitance of said complex capacitive impedance as said complex capacitive impedance appears to said first node (E).
Claim 2
Dependent Claim
228 words
A complex capacitive impedance comprising: a first node (e); a first resistor (R1) having one end connected to said node; a capacitive impedance (Z3) connected in a series between the other end of said first resistor (R1) and a second node (A) such that said capacitive impedance (Z3) and said first resistor (R1) form a voltage divider; a voltage follower circuit (SFS) connected to said first node and in parallel with said first resistor (R1), said voltage follower circuit comprising an operational amplifier (OPI), the noninverting input of said operational amplifier being connected to a second node (G) located between the other end of said first resistor (RI) and said capacitive impedance and the inverting input of said operational amplifier being connected by a shunt wire to the output of said operational amplifier, and a second resistor (R2, R5) connected at one end to said first node and at the other end to the output of said operational amplifier, wherein said capacitive impedance (Z3) comprises a combination of a third resistor (R4) in a series with a combination of a fourth resistor (R3) and a capacitor (C3), wherein said fourth resistor (R3) is made having a large enough value that said capacitor (C3) has a value considerably lower than that total capacitance of said complex capacitive impedance as said complex capacitive impedance appears to said first node (E).
Claim 3
Dependent Claim
219 words
A complex capacitive impedance comprising: a first node (E); a first resistor (R1) having one end connected to said node; a capacitive impedance (Z3) connected in a series between the other end of said first resistor (R1) and a second node (A) such that said capacitive impedance (Z3) and said first resistor (R1) form a voltage divider; a voltage follower circuit (SFS) connected to said first node and in parallel with said first resistor (R1), said voltage follower circuit comprising an operational amplifier (OPI), the noninverting input of said operational amplifier being connected to a second node (G) located between the other end of said first resistor (RI) and said capacitive impedance and the inverting input of said operational amplifier being connected by a shunt wire to the output of said operational amplifier, and a second resistor (R2, R5) connected at the one end to said first node and at the other end to the output of said operational amplifier, wherein said capacitive impedance (Z3) comprises a parallel combination of a third resistor (R3) and a capacitor (C3), wherein said third resistor (R3) is made having a large enough value that said capacitor (C3) has a value considerably lower than the total capacitance of said complex capacitive impedance as said complex capacitive impedance appears to said first node (E).
Claim 4
Dependent Claim
219 words
A complex capacitive impedance comprising: a first node (E); a first resistor (R1) having one end connected to said node; a capacitive impedance (Z3) connected in a series between the other end of said first resistor (R1) and a second node (A) such that said capacitive impedance (Z3) and said first resistor (R1) form a voltage divider; a voltage follower circuit (SFS) connected to said first node and in parallel with said first resistor (R1), said voltage follower circuit comprising an operational amplifier (OPI), the noninverting input of said operational amplifier being connected to a second node (G) located between the other end of said first resistor (RI) and said capacitive impedance and the inverting input of said operational amplifier being connected by a shunt wire to the output of said operational amplifier, and a second resistor (R2, R5) connected at the one end to said first node and at the other end to the output of said operational amplifier, wherein said capacitive impedance (Z3) comprises a parallel combination of a third resistor (R3) and a capacitor (C3), wherein said third resistor (R3) is made having a large enough value that said capacitor (C3) has a value considerably lower than the total capacitance of said complex capacitive impedance as said complex capacitive impedance appears to said first node (E).
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