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US4607168A Expired / Lapsed US ⏱️ 0.0 years remaining

Photosensor array devices

Assignee: Hitachi Ltd
•
Filing: 1983-07-06
•
Granted: 1986-08-19
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Expires: 2003-07-06
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Abstract

Abstract A photosensor array device comprises a line sensor including a plurality of sets of sensors juxtaposed on a transparent glass substrate. Each set comprises an amorphous silicon photodiode, a crosstalk preventing element in the form of a diode or a transistor and a matrix wiring connected to the element. A selector is provided for driving the crosstalk preventing elements of the line sensor. The photodiode and the crosstalk preventing element are formed integrally.

Inventors

  • 👤 Ryoji Oritsuki
  • 👤 Susumu Saito
  • 👤 Hiromi Kanai

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 14:45
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/191

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 86 words
A photosensor array device comprising: an insulating substrate; a plurality of photo-diodes formed on said substrates; and a plurality of insulated-gate thin film field-effect transistors formed on said insulating substrate, and each coupled to a respective one of said photo-diodes so that the conduction path between the source and drain path of each of said transistors is coupled in series with its respective photo-diodes; said photo-diode and said transistors including a plurality of amorphous silicon islands each island being common to a coupled photo-diode transistor pair.
Claim 2
Dependent Claim 86 words
A photosensor array device comprising: an insulating substrate; a plurality of photo-diodes formed on said substrates; and a plurality of insulated-gate thin film field-effect transistors formed on said insulating substrate, and each coupled to a respective one of said photo-diodes so that the conduction path between the source and drain path of each of said transistors is coupled in series with its respective photo-diodes; said photo-diode and said transistors including a plurality of amorphous silicon islands each island being common to a coupled photo-diode transistor pair.
Claim 3
Dependent Claim 94 words
A photosensor array device comprising: an insulating substrate; a plurality of photo-diodes formed on said substrate; and a plurality of thin film transistors one for each of said photo-diodes formed on said insulating substrate with connections respectively for selecting said photo-diodes; each of said photo-diode being comprised of an amorphous silicon film; each of said transistors comprising a source electrode, a drain electrode, an amorphous silicon film and a gate electrode for controlling electrical conductance of said film between said source and drain electrodes, said amorphous silicon film being integral for each photo-diode-transistor pair.
Claim 4
Dependent Claim 94 words
A photosensor array device comprising: an insulating substrate; a plurality of photo-diodes formed on said substrate; and a plurality of thin film transistors one for each of said photo-diodes formed on said insulating substrate with connections respectively for selecting said photo-diodes; each of said photo-diode being comprised of an amorphous silicon film; each of said transistors comprising a source electrode, a drain electrode, an amorphous silicon film and a gate electrode for controlling electrical conductance of said film between said source and drain electrodes, said amorphous silicon film being integral for each photo-diode-transistor pair.
Claim 5
Dependent Claim 30 words
The photosensor array according to claim 2, wherein said amorphous silicon film of each of said photo-diodes and each of said transistors are simultaneously formed in the same manufacturing step.
Claim 6
Dependent Claim 34 words
The photosensor array according to claim 1 or claim 2 wherein an electrode of each of said photo-diodes and an electrode of each of said transistors are simultaneously formed in the same manufacturing step.

References Cited (Backward Citations)

US4376888A Cited
US4288702A Cited
US4499384A Cited
US4496834A Cited
US4482804A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-08-18 1990-02-17 1990-08-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-08-18 1994-02-17 1994-08-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-08-18 1998-02-17 1998-08-19 $7700.00 Window Closed / Lapsed

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