US4482804A
Expired / Lapsed
US
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Photosensor array wherein each photosensor comprises a plurality of amorphous silicon p-i-n diodes
Assignee: Hitachi Ltd
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Filing: 1982-09-15
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Granted: 1984-11-13
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Expires: 2002-09-15
Abstract
Abstract In a photosensor apparatus of the type including one dimensional photosensor array in which a plurality of photosensors mounted on a transparent substrate at a predetermined spacing are respectively connected in series with blocking diodes which select outputs of the photosensors. Each one of the photosensors comprises a plurality of laminated amorphous silicon diodes comprising p-i-n junction layers. Each blocking diode comprises at least one amorphous silicon diode having a p-i-n junction layer, and each photosensor generates an electromotive force larger than a forward voltage drop across each blocking diode.
Inventors
- 👤 Ryoji Oritsuki
- 👤 Yukio Ichimura
- 👤 Hiromi Kanai
- 👤 Kenichi Shimada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 23:16
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H04; H04N; H04N1/00; H04N1/024; H04N1/028; H04N1/03; H04N1/031
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
98 words
In a photosensor apparatus of the type including one dimensional photosensor array in which a plurality of photosensors mounted on a transparent substrate at a predetermined spacing are respectively connected in series with blocking diodes which select outputs of said photosensors, the improvement wherein each one of said photosensors comprises a plurality of laminated amorphous silicon diodes comprising p-i-n junction layers, each of said blocking diodes comprises at least one amorphous silicon diode having a p-i-n junction layer, and wherein each photosensor generates an electromotive force larger than a forward voltage drop across each of said blocking diodes.
Claim 2
Dependent Claim
98 words
In a photosensor apparatus of the type including one dimensional photosensor array in which a plurality of photosensors mounted on a transparent substrate at a predetermined spacing are respectively connected in series with blocking diodes which select outputs of said photosensors, the improvement wherein each one of said photosensors comprises a plurality of laminated amorphous silicon diodes comprising p-i-n junction layers, each of said blocking diodes comprises at least one amorphous silicon diode having a p-i-n junction layer, and wherein each photosensor generates an electromotive force larger than a forward voltage drop across each of said blocking diodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-11-13 | 1988-05-14 | 1988-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-11-13 | 1992-05-14 | 1992-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-11-13 | 1996-05-14 | 1996-11-13 | $7700.00 | Window Closed / Lapsed |