Integrated PV-thermal panel and process for production

Claim 2

An integrated photovoltaic-thermal panel comprising a layer of crystalline silicon made in part by reduction of silicic acid by hot carbon atoms and having a p-n junction therein, on a substrate of oxidized copper.

Claim 3

A process for production of integrated photovoltaic-thermal panels, the preferred process including the following chemical vapor depositions, in air, and the following work stations: (a) copper oxide station, whereby sheet copper, Cu, is cleaned and a layer of copper oxide, CuO, is formed thereon by heating said copper in air or steam, (b) silica station, whereby silicic acid, Si(OH) 4 , and steam, H 2 O, are sprayed on said hot oxidized sheets of copper, and Si(OH) 4 is reduced by hot carbon atoms to carbon monoxide, CO, which is vented and burned off, and silica, SiO 2 , a layer of which is deposited onto and bonded thermally to said copper oxide layer, (c) silicon station, whereby said silicic acid is further reduced by increased numbers of hot carbon atoms to silicon, Si, a layer of which is deposited on and bonded to said SiO 2 layer, (d) p-n junction station, whereby boron atoms, then phosphorus atoms, are diffused into said silicon layer, under temperature, timing and number density controls, to establish what is called a p-n junction, (e) crystallization station, whereby heat is applied to the surface of said doped silicon layer, to sinter same and to let silicon atoms form bonds with one another in an orderly and crystalline manner and dominate over unordered, amorphous, bonds of oxide layers below, the results being a crystalline photovoltaic, PV, surface layer bonded to a silica layer and that to CuO and that to Cu, (f) electrode grid station, whereby electrical leadwires are affixed in series and in parallel to said PV surfaces, (g) thermal exchanger station, whereby flat tubes are soldered to the underside of said copper substrate, to carry a heat exchange fluid to and away from said PV layer, to cool said PV layer and to extract thermal heat as well as electrical energy from said integrated PV-thermal panel.

Claim 4

A process for production of integrated photovoltaic-thermal panels, the preferred process including the following chemical vapor depositions, in air, and the following work stations: (a) copper oxide station, whereby sheet copper, Cu, is cleaned and a layer of copper oxide, CuO, is formed thereon by heating said copper in air or steam, (b) silica station, whereby silicic acid, Si(OH) 4 , and steam, H 2 O, are sprayed on said hot oxidized sheets of copper, and Si(OH) 4 is reduced by hot carbon atoms to carbon monoxide, CO, which is vented and burned off, and silica, SiO 2 , a layer of which is deposited onto and bonded thermally to said copper oxide layer, (c) silicon station, whereby said silicic acid is further reduced by increased numbers of hot carbon atoms to silicon, Si, a layer of which is deposited on and bonded to said SiO 2 layer, (d) p-n junction station, whereby boron atoms, then phosphorus atoms, are diffused into said silicon layer, under temperature, timing and number density controls, to establish what is called a p-n junction, (e) crystallization station, whereby heat is applied to the surface of said doped silicon layer, to sinter same and to let silicon atoms form bonds with one another in an orderly and crystalline manner and dominate over unordered, amorphous, bonds of oxide layers below, the results being a crystalline photovoltaic, PV, surface layer bonded to a silica layer and that to CuO and that to Cu, (f) electrode grid station, whereby electrical leadwires are affixed in series and in parallel to said PV surfaces, (g) thermal exchanger station, whereby flat tubes are soldered to the underside of said copper substrate, to carry a heat exchange fluid to and away from said PV layer, to cool said PV layer and to extract thermal heat as well as electrical energy from said integrated PV-thermal panel.