US4604643A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor rectifier device
Assignee: Toshiba Corp
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Filing: 1984-10-30
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Granted: 1986-08-05
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Expires: 2004-10-30
Abstract
Abstract A semiconductor rectifier device includes a heat-radiating substrate, a flame-sprayed insulating layer formed directly on a surface of the substrate, at least one first flame-sprayed metal layer selectively formed on the surface of the radiation substrate, and a second metal layer selectively formed on the flame-sprayed insulating layer. A rectifying circuit has first and second rectifying elements which are electrically coupled, respectively, at terminals of opposite polarities, with the first flame-sprayed metal layer and the second flame-sprayed metal layer. An electrode electrically connects the terminals of the rectifying elements having polarities opposite to those of the terminals connected to the first and second flame-sprayed layers.
Inventors
- 👤 Yoshiharu Yotsumoto
- 👤 Katsuhiko Kubota
- 👤 Toshinobu Sekiba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:01
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/10; H02; H02K; H02K11/00; H02K11/04; H02K11/049; H02K11/05; H10W90/00; Y; Y10; Y10S; Y10S257/00; Y10S257/909
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
191 words
A semiconductor rectifier device comprising: a substrate designed to radiate heat; a flame-sprayed ceramic layer formed directly on a surface of said substrate, and having a low heat resistance; two first flame-sprayed metal layers formed directly on said surface of said substrate, one of the two metal layers being located at one side of said ceramic layer and the other of the two metal layers being located at the other side of said ceramic layer; a second flame-sprayed metal layer formed on said flame-sprayed ceramic layer; a rectifier circuit comprising first through fourth rectifying elements grouped into two pairs, each of said pairs being electrically coupled, respectively, between a separate one of said two first flame-sprayed metal layers and said second flame-sprayed metal layer, each of said rectifying elements having two terminals to permit coupling of the rectifying elements in circuit, wherein the terminals of the rectifying elements in each pair which are coupled to said first and second flame-sprayed metal layers are of opposite polarity; and an electrode member connected to each pair of rectifying elements at the terminals which are not coupled to said first and second flame-sprayed layers.
Claim 2
Dependent Claim
191 words
A semiconductor rectifier device comprising: a substrate designed to radiate heat; a flame-sprayed ceramic layer formed directly on a surface of said substrate, and having a low heat resistance; two first flame-sprayed metal layers formed directly on said surface of said substrate, one of the two metal layers being located at one side of said ceramic layer and the other of the two metal layers being located at the other side of said ceramic layer; a second flame-sprayed metal layer formed on said flame-sprayed ceramic layer; a rectifier circuit comprising first through fourth rectifying elements grouped into two pairs, each of said pairs being electrically coupled, respectively, between a separate one of said two first flame-sprayed metal layers and said second flame-sprayed metal layer, each of said rectifying elements having two terminals to permit coupling of the rectifying elements in circuit, wherein the terminals of the rectifying elements in each pair which are coupled to said first and second flame-sprayed metal layers are of opposite polarity; and an electrode member connected to each pair of rectifying elements at the terminals which are not coupled to said first and second flame-sprayed layers.
Claim 3
Dependent Claim
16 words
A semiconductor rectifier device according to claim 1, in which said substrate is made of aluminum.
Claim 4
Dependent Claim
16 words
A semiconductor rectifier device according to claim 1, in which said substrate is made of copper.
Claim 5
Dependent Claim
23 words
A semiconductor rectifier device according to claim 1, further comprising rigid and non-plastic covering means for protecting said components formed on said substrate.
Claim 6
Dependent Claim
17 words
A semiconductor rectifier device according to claim 4, wherein said covering means is bonded to said substrate.
Claim 7
Dependent Claim
245 words
A semiconductor rectifier device comprising: a substrate designed to radiate heat; a flame-sprayed ceramic layer formed directly on a surface of said substrate, and having a low heat resistance; first, second and third flame-sprayed metal layers formed directly on said surface of said substrate, said first to third flame-sprayed metal layers being arranged in a staggered fashion with said ceramic layer positioned between them, said first and second flame-sprayed metal layers being located at one side of said ceramic layer and being separated from each other, and said third flame-sprayed metal layer being located at the other side of said ceramic layer; a fourth flame-sprayed metal layer formed on said ceramic layer; a rectifier circuit comprising first, second, third, fourth fifth and sixth rectifying elements, the anodes of said first, second and third rectifying elements being electrically coupled to said first, second and third flame-sprayed metal layers, respectively, and the cathodes of said fourth, fifth and sixth rectifying elements being electrically coupled to said fourth flame-sprayed metal layer; and first, second and third electrode members, said first electrode member being electrically coupled to the cathode of said first rectifying element and the anode of said fourth rectifying element, said second electrode member being electrically coupled to the cathode of said second rectifying element and the anode of said fifth rectifying element, and said third electrode member being electrically coupled to said cathode of said third rectifying element and the anode of said sixth rectifying element.
Claim 8
Dependent Claim
245 words
A semiconductor rectifier device comprising: a substrate designed to radiate heat; a flame-sprayed ceramic layer formed directly on a surface of said substrate, and having a low heat resistance; first, second and third flame-sprayed metal layers formed directly on said surface of said substrate, said first to third flame-sprayed metal layers being arranged in a staggered fashion with said ceramic layer positioned between them, said first and second flame-sprayed metal layers being located at one side of said ceramic layer and being separated from each other, and said third flame-sprayed metal layer being located at the other side of said ceramic layer; a fourth flame-sprayed metal layer formed on said ceramic layer; a rectifier circuit comprising first, second, third, fourth fifth and sixth rectifying elements, the anodes of said first, second and third rectifying elements being electrically coupled to said first, second and third flame-sprayed metal layers, respectively, and the cathodes of said fourth, fifth and sixth rectifying elements being electrically coupled to said fourth flame-sprayed metal layer; and first, second and third electrode members, said first electrode member being electrically coupled to the cathode of said first rectifying element and the anode of said fourth rectifying element, said second electrode member being electrically coupled to the cathode of said second rectifying element and the anode of said fifth rectifying element, and said third electrode member being electrically coupled to said cathode of said third rectifying element and the anode of said sixth rectifying element.
Claim 9
Dependent Claim
187 words
A semiconductor rectifier device comprising: a substrate designed to radiate heat; a flame-sprayed ceramic layer formed directly on a surface of said substrate, and having a low heat resistance; first and second flame-sprayed metal layers formed directly on said surface of said substrate, said first flame-sprayed metal layer being located at one side of said ceramic layer, and said second flame-sprayed metal layer being located at the other side of said ceramic layer; a third flame-sprayed metal layer formed on said ceramic layer; a rectifier circuit comprising first, second, third and fourth rectifying elements, the anodes of said first and second rectifying elements being electrically coupled to said first and second flame-sprayed metal layers, respectively, and the cathodes of said third and fourth rectifying elements being electrically coupled to said third flame-sprayed metal layer; and first and second electrode members, said first electrode member being electrically coupled to the cathode of said first rectifying element and the anode of said third rectifying element, and said second electrode member being electrically coupled to the cathode of said second rectifying element and the anode of said fourth rectifying element.
Claim 10
Dependent Claim
187 words
A semiconductor rectifier device comprising: a substrate designed to radiate heat; a flame-sprayed ceramic layer formed directly on a surface of said substrate, and having a low heat resistance; first and second flame-sprayed metal layers formed directly on said surface of said substrate, said first flame-sprayed metal layer being located at one side of said ceramic layer, and said second flame-sprayed metal layer being located at the other side of said ceramic layer; a third flame-sprayed metal layer formed on said ceramic layer; a rectifier circuit comprising first, second, third and fourth rectifying elements, the anodes of said first and second rectifying elements being electrically coupled to said first and second flame-sprayed metal layers, respectively, and the cathodes of said third and fourth rectifying elements being electrically coupled to said third flame-sprayed metal layer; and first and second electrode members, said first electrode member being electrically coupled to the cathode of said first rectifying element and the anode of said third rectifying element, and said second electrode member being electrically coupled to the cathode of said second rectifying element and the anode of said fourth rectifying element.
Claim 11
Dependent Claim
214 words
A semiconductor rectifier device comprising: a substrate designed to radiate heat; a flame-sprayed ceramic layer formed directly on a surface of said substrate, and having a low heat resistance; three first flame-sprayed metal layers formed directly on said surface of said substrate, the three metal layers being arranged in a staggered fashion with said ceramic layer positioned between them, two of the three metal layers being located at one side of said ceramic layer and being separated from each other, and the other of the three metal layers being located at the other side of said ceramic layer; a second flame-sprayed metal layer formed on said flame-sprayed ceramic layer; a rectifier circuit comprising first through sixth rectifying elements grouped into three pairs, each of said pairs being electrically coupled, respectively, between a separate one of said three first flame-sprayed metal layers and said second flame-sprayed metal layer, each of said rectifying elements having two terminals to permit coupling of the rectifying elements in circuit, wherein the terminals of the rectifying elements in each pair which are coupled to said first and second flame-sprayed metal layers are of opposite polarity; and an electrode member connected to each pair of rectifying elements at the terminals which are not coupled to said first and second flame-sprayed layers.
Claim 12
Dependent Claim
214 words
A semiconductor rectifier device comprising: a substrate designed to radiate heat; a flame-sprayed ceramic layer formed directly on a surface of said substrate, and having a low heat resistance; three first flame-sprayed metal layers formed directly on said surface of said substrate, the three metal layers being arranged in a staggered fashion with said ceramic layer positioned between them, two of the three metal layers being located at one side of said ceramic layer and being separated from each other, and the other of the three metal layers being located at the other side of said ceramic layer; a second flame-sprayed metal layer formed on said flame-sprayed ceramic layer; a rectifier circuit comprising first through sixth rectifying elements grouped into three pairs, each of said pairs being electrically coupled, respectively, between a separate one of said three first flame-sprayed metal layers and said second flame-sprayed metal layer, each of said rectifying elements having two terminals to permit coupling of the rectifying elements in circuit, wherein the terminals of the rectifying elements in each pair which are coupled to said first and second flame-sprayed metal layers are of opposite polarity; and an electrode member connected to each pair of rectifying elements at the terminals which are not coupled to said first and second flame-sprayed layers.
Claim 13
Dependent Claim
16 words
A semiconductor rectifier device according to claim 8, in which said substrate is made of aluminum.
Claim 14
Dependent Claim
16 words
A semiconductor rectifier device according to claim 8, in which said substrate is made of copper.
Claim 15
Dependent Claim
23 words
A semiconductor rectifier device according to claim 8, further comprising rigid and non-plastic covering means for protecting said components formed on said substrate.
Claim 16
Dependent Claim
17 words
A semiconductor rectifier device according to claim 11, wherein said covering means is bonded to said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-08-04 | 1990-02-03 | 1990-08-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-08-04 | 1994-02-03 | 1994-08-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-08-04 | 1998-02-03 | 1998-08-05 | $7700.00 | Window Closed / Lapsed |