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US4604637A Expired / Lapsed US ⏱️ 0.0 years remaining

Light-emitting diode suitable as a pressure sensor

Assignee: Siemens AG
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Filing: 1983-03-01
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Granted: 1986-08-05
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Expires: 2003-03-01
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Abstract

Abstract A light-emitting diode comprises III-V semiconductor material having a pn junction as its light-active zone from which luminescent radiation is emitted, the radiation having a pressure-dependent characteristic. The diode is characterized in that, for the purpose of pressure-dependent brightness of the light radiation, the composition of the light-active zone at the pn junction comprises a semiconductor material which has a composition which corresponds to a position close to the transition from a direct energy gap to an indirect energy gap and at which a change of the composition would result in a significant change in the brightness of the emission. The invention is particularly useful for potential-free measurement of pressure forces.

Inventors

  • 👤 Wolfgang Ruhle
  • 👤 Claus Weyrich

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 02:12
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; G; G01; G01L; G01L1/00; G01L1/24; H10H20/822; H10H20/824

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 149 words
A luminescent diode including electrodes for supporting a constant current flow and responsive to pressure with pressure-dependent brightness of emitted luminescent radiation, said diode comprising: a semiconductor body of III-V mixed semiconductor material consisting of GA l-x Al x As and dopants, wherein 0<x<0.4, and including a first component of said body comprising p-conductive material, and a second component of said body comprising n-conductive material and forming a pn junction with said first component to define an active zone for emitting luminescent radiation, the value of mixture of said semiconductor material being selected as an energy gap material close to the transition from a direct energy gap to an indirect energy gap and at which a change of the value x of the composition would result in a significant change in the brightness of emission so that exertion of pressure on said diode results in a pressure induced transition.
Claim 2
Dependent Claim 149 words
A luminescent diode including electrodes for supporting a constant current flow and responsive to pressure with pressure-dependent brightness of emitted luminescent radiation, said diode comprising: a semiconductor body of III-V mixed semiconductor material consisting of GA l-x Al x As and dopants, wherein 0<x<0.4, and including a first component of said body comprising p-conductive material, and a second component of said body comprising n-conductive material and forming a pn junction with said first component to define an active zone for emitting luminescent radiation, the value of mixture of said semiconductor material being selected as an energy gap material close to the transition from a direct energy gap to an indirect energy gap and at which a change of the value x of the composition would result in a significant change in the brightness of emission so that exertion of pressure on said diode results in a pressure induced transition.
Claim 3
Dependent Claim 15 words
The luminescent diode of claim 1, wherein said semiconductor material comprises gallium aluminum arsenide phosphide.
Claim 4
Dependent Claim 23 words
The luminescent diode of claim 1, wherein said semiconductor material comprises Ga l-x Al x As, where x is in the range 0<x<0.4.
Claim 5
Dependent Claim 229 words
A pressure sensor comprising: a luminescent diode for supporting a current flow and responsive to pressure to produce pressure-dependent luminescent radiation, said diode comprising a semiconductor body of III-V mixed semiconductor material consisting of Ga l-x Al x As and dopants, wherein 0<x<0.4, and a pair of electrodes carried on said body, said body comprising a first p-conductive component of the III-V semiconductor material and carrying one of said electrodes; a second n-conductive component of the same III-V semiconductor material forming a pn junction with said first component to define an active light zone for emitting radiation, and carrying the other of said electrodes, and a pair of electrical conductors for connection to a current source connected to said pair of electrodes, respectively, for supporting a constant current flow through said diode, said active light zone comprising a value of mixture of said semiconductor material selected as a direct energy gap material close to the transition from the direct energy gap to an indirect energy gap and at which a change of the value X of the composition would result in a significant change in the brightness of emission so that an exertion of pressure on said diode results in a pressure induced transition; and light detection means coupled to said luminescent diode, including indicating means for indicating pressure as a function of the brightness of the detected light.
Claim 6
Dependent Claim 229 words
A pressure sensor comprising: a luminescent diode for supporting a current flow and responsive to pressure to produce pressure-dependent luminescent radiation, said diode comprising a semiconductor body of III-V mixed semiconductor material consisting of Ga l-x Al x As and dopants, wherein 0<x<0.4, and a pair of electrodes carried on said body, said body comprising a first p-conductive component of the III-V semiconductor material and carrying one of said electrodes; a second n-conductive component of the same III-V semiconductor material forming a pn junction with said first component to define an active light zone for emitting radiation, and carrying the other of said electrodes, and a pair of electrical conductors for connection to a current source connected to said pair of electrodes, respectively, for supporting a constant current flow through said diode, said active light zone comprising a value of mixture of said semiconductor material selected as a direct energy gap material close to the transition from the direct energy gap to an indirect energy gap and at which a change of the value X of the composition would result in a significant change in the brightness of emission so that an exertion of pressure on said diode results in a pressure induced transition; and light detection means coupled to said luminescent diode, including indicating means for indicating pressure as a function of the brightness of the detected light.
Claim 7
Dependent Claim 21 words
The pressure sensor of claim 4, and further comprising: a light waveguide coupling said light-emitting diode to said light detection means.
Claim 8
Dependent Claim 23 words
The pressure sensor of claim 4, wherein said light detection means comprises: a photo diode; and a meter connected to said photo diode.
Claim 9
Dependent Claim 17 words
The pressure sensor of claim 4, and further comprising: a current source connected to said electrical conductors.
Claim 10
Dependent Claim 25 words
The pressure sensor of claim 4, and further comprising: a photo diode connected to said electrical conductors; and a light source irradiating said photo diode.
Claim 11
Dependent Claim 15 words
The pressure sensor of claim 8, wherein: said light source comprises a further light-emitting diode.
Claim 12
Dependent Claim 14 words
The pressure sensor of claim 8, wherein: said light source comprises a laser diode.
Claim 13
Independent Claim 105 words
A method of measuring pressure comprising the steps of: applying pressure to a light-emitting diode which emits pressure-dependent luminescent radiation from an active light zone of a pn junction which has a semiconductor material composition corresponding to a position close to a transition from a direct energy gap to an indirect energy gap and at which a change in the composition would result in a significant change in the brightness of emission; contemporaneously flowing direct current through the diode to stimulate luminescent radiation; detecting the luminescent radiation; and indicating the magnitude of the applied pressure as a function of the brightness of the light radiation.
Claim 14
Independent Claim 105 words
A method of measuring pressure comprising the steps of: applying pressure to a light-emitting diode which emits pressure-dependent luminescent radiation from an active light zone of a pn junction which has a semiconductor material composition corresponding to a position close to a transition from a direct energy gap to an indirect energy gap and at which a change in the composition would result in a significant change in the brightness of emission; contemporaneously flowing direct current through the diode to stimulate luminescent radiation; detecting the luminescent radiation; and indicating the magnitude of the applied pressure as a function of the brightness of the light radiation.

References Cited (Backward Citations)

US3525947A Cited
US3384837A Cited
US3566215A Cited
DE2616649A1 Cited
US4141025A Cited
US4278986A Cited
US4274103A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-08-04 1990-02-03 1990-08-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-08-04 1994-02-03 1994-08-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-08-04 1998-02-03 1998-08-05 $7700.00 Window Closed / Lapsed

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