Method of making plurality of series connected solar cells using multiple groove forming processes

Claim 1

A method of manufacturing a photoelectric conversion device which is provided with a plurality of series-connected semiconductor transducers U 1 , U 2 , . . ., comprising steps of: (a) forming a first conductive layer on a substrate having a length extending in the direction of said series connected transducers and a width extending in a direction substantially perpendicular to said length, said substrate having an insulating surface; (b) scribing the first conductive layer by a first laser beam to cut therein a plurality of sequentially arranged first isolation grooves G 12 , G 23 , . . ., by which a plurality of sequentially arranged first electrodes E 1 , E 2 , . . . are formed on the substrate, said first isolation grooves respectively extending in the width direction of the substrate; (c) forming a non-single-crystal semiconductor laminate member on the substrate to cover the plurality of first electrodes E 1 , E 2 , . . . and to fill the plurality of first isolation grooves G 12 , G 23 , . . .; (d) digging in the non-single-crystal semiconductor laminate member by a second laser beam, contact grooves O 12 , O 23 , . . . to expose therein the first electrodes E 1 , E 2 , . . . locally to the outside on the side of the first isolation grooves G 12 , G 23 , . . ., respectively; (e) forming on the non-single-crystal semiconductor member second electrodes F 1 , F 2 , . . . having respective contact portions K 12 , K 23 , . . . extending to respectively connect the second electrodes F 1 , F 2 , . . . to the first electrodes E 2 , E 3 , . . . through the contact portion K 12 , K 23 , . . . where said second electrodes F 1 , F 2 , . . . are respectively separated by second isolation grooves H 12 , H 23 , . . . ; (f) in the step of scribing the first conductive layer through using the first laser beam, there is cut in the first conductive layer third isolation groove(s) which extend along the direction of arrangement of the semiconductor transducers U 1 , U 2 , . . . such that the third isolation groove (s) are substantially orthogonal to the first isolation grooves and in which is exposed side(s) of the first electrode E i (where i=1, 2, . . . ) extending along the direction of arrangement of the semiconductor transducers U 1 , U 2 , . . . .

Claim 2

A method of manufacturing a photoelectric conversion device which is provided with a plurality of series-connected semiconductor transducers U 1 , U 2 , . . ., comprising steps of: (a) forming a first conductive layer on a substrate having a length extending in the direction of said series connected transducers and a width extending in a direction substantially perpendicular to said length, said substrate having an insulating surface; (b) scribing the first conductive layer by a first laser beam to cut therein a plurality of sequentially arranged first isolation grooves G 12 , G 23 , . . ., by which a plurality of sequentially arranged first electrodes E 1 , E 2 , . . . are formed on the substrate, said first isolation grooves respectively extending in the width direction of the substrate; (c) forming a non-single-crystal semiconductor laminate member on the substrate to cover the plurality of first electrodes E 1 , E 2 , . . . and to fill the plurality of first isolation grooves G 12 , G 23 , . . .; (d) digging in the non-single-crystal semiconductor laminate member by a second laser beam, contact grooves O 12 , O 23 , . . . to expose therein the first electrodes E 1 , E 2 , . . . locally to the outside on the side of the first isolation grooves G 12 , G 23 , . . ., respectively; (e) forming on the non-single-crystal semiconductor member second electrodes F 1 , F 2 , . . . having respective contact portions K 12 , K 23 , . . . extending to respectively connect the second electrodes F 1 , F 2 , . . . to the first electrodes E 2 , E 3 , . . . through the contact portion K 12 , K 23 , . . . where said second electrodes F 1 , F 2 , . . . are respectively separated by second isolation grooves H 12 , H 23 , . . . ; (f) in the step of scribing the first conductive layer through using the first laser beam, there is cut in the first conductive layer third isolation groove(s) which extend along the direction of arrangement of the semiconductor transducers U 1 , U 2 , . . . such that the third isolation groove (s) are substantially orthogonal to the first isolation grooves and in which is exposed side(s) of the first electrode E i (where i=1, 2, . . . ) extending along the direction of arrangement of the semiconductor transducers U 1 , U 2 , . . . .