Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
182 words
In an imaging array of the charge transfer type comprising a semiconductor body of a first conductivity type having first and second major surfaces and including a plurality of substantially parallel charge transfer channels comprising regions of a second conductivity type extending a distance into the body from the first major surface thereof and channel stops comprising regions containing an excess concentration of first type conductivity modifiers and extending a distance into said body from the first major surface between the charge transfer channels; the improvement which comprises blooming drains comprising regions of the second conductivity type extending a distance from the first major surface into at least some of the channel stops and buried barrier regions containing a greater concentration of first type conductivity modifiers than the semiconductor body and the channel stops extending a further distance into the body from the channel stops which contain a blooming drain, the concentration of conductivity modifiers in said buried barrier regions being sufficient so as to provide a potential barrier means for preventing the direct flow of photogenerated charge into a blooming drain.
Claim 2
Dependent Claim
182 words
In an imaging array of the charge transfer type comprising a semiconductor body of a first conductivity type having first and second major surfaces and including a plurality of substantially parallel charge transfer channels comprising regions of a second conductivity type extending a distance into the body from the first major surface thereof and channel stops comprising regions containing an excess concentration of first type conductivity modifiers and extending a distance into said body from the first major surface between the charge transfer channels; the improvement which comprises blooming drains comprising regions of the second conductivity type extending a distance from the first major surface into at least some of the channel stops and buried barrier regions containing a greater concentration of first type conductivity modifiers than the semiconductor body and the channel stops extending a further distance into the body from the channel stops which contain a blooming drain, the concentration of conductivity modifiers in said buried barrier regions being sufficient so as to provide a potential barrier means for preventing the direct flow of photogenerated charge into a blooming drain.
Claim 3
Dependent Claim
14 words
The array of claim 1 wherein each channel stop has a blooming drain therein.
Claim 4
Dependent Claim
21 words
The array of claim 1 wherein each charge transfer channel has adjacent thereto a channel stop with a blooming drain therein.
Claim 5
Dependent Claim
35 words
The array of claim 1 wherein the semiconductor body has p-type conductivity, the charge transfer channels and the blooming drains have n-type conductivity, and the channel stops and the buried barrier regions have p-type conductivity.
Claim 6
Dependent Claim
26 words
The array of claim 4 wherein a portion of those channel stops which have blooming drains therein, adjacent to the first major surface is n-type conductivity.
Claim 7
Dependent Claim
29 words
The array of claim 3 wherein buried barrier regions extend a distance into the body from that portion of the channel stops which is only beneath the blooming drains.
Claim 8
Dependent Claim
39 words
The array of claim 3 wherein the buried barrier regions contain an excess concentration of p-type conductivity modifiers which is between about five and fifty times greater than the excess concentration of p-type conductivity modifiers in the channel stops.
Claim 9
Dependent Claim
39 words
The array of claim 3 wherein the buried barrier regions contain an excess concentration of p-type conductivity modifiers which is between about five and five hundred times greater than the excess concentration of p-type conductivity modifiers in the body.
Claim 10
Dependent Claim
15 words
The array of claim 1 wherein only alternate channel stops have a blooming drain therein.
Claim 11
Dependent Claim
24 words
The array of claim 9 wherein the buried barrier regions extend into the body from only those channel stops which contain a blooming drain.
Claim 12
Dependent Claim
25 words
The array of claim 3 wherein the buried barrier regions extend a distance into the body from over the full width of the channel stop.