Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
152 words
In a plasma reactor chamber, a system for generating uniform gas flow comprising: (a) a first hollow electrode disposed in said chamber, said electrode having two major surfaces, each of said major surfaces having a plurality of apertures therein; (b) a second hollow electrode disposed in said chamber opposite said first electrode, said second electrode having two major surfaces, each of said major surfaces having a plurality of apertures therein; (c) a first radio frequency power source operatively connected to said first electrode for generating an electrical field; (d) a second radio frequency power source operatively connected to said second electrode for generating an electrical field; (e) means for supporting a substrate intermediate said first and second electrodes; and (f) means for introducing a gas to be converted into a reactive species by said radio frequency electrical field through said electrodes, said electrodes being adapted to distribute gas uniformly across the substrate.
Claim 2
Dependent Claim
152 words
In a plasma reactor chamber, a system for generating uniform gas flow comprising: (a) a first hollow electrode disposed in said chamber, said electrode having two major surfaces, each of said major surfaces having a plurality of apertures therein; (b) a second hollow electrode disposed in said chamber opposite said first electrode, said second electrode having two major surfaces, each of said major surfaces having a plurality of apertures therein; (c) a first radio frequency power source operatively connected to said first electrode for generating an electrical field; (d) a second radio frequency power source operatively connected to said second electrode for generating an electrical field; (e) means for supporting a substrate intermediate said first and second electrodes; and (f) means for introducing a gas to be converted into a reactive species by said radio frequency electrical field through said electrodes, said electrodes being adapted to distribute gas uniformly across the substrate.
Claim 3
Dependent Claim
27 words
The system in accordance with claim 1 wherein said means for supporting a substrate is adapted to support a substrate having a plurality of thru holes therein.
Claim 4
Dependent Claim
17 words
The system in accordance with claim 1 wherein said apertures in each of said electrodes are tapered.
Claim 5
Dependent Claim
20 words
The system. in accordance with claim 2 further comprising: (g) means for maintaining said substrate at a fixed voltage potential.
Claim 6
Dependent Claim
21 words
The system in accordance with claim 4 further comprising: (h) means operatively connected to said reactor chamber for exhausting gas therefrom.
Claim 7
Dependent Claim
23 words
The system in accordance with claim 5 further comprising a reactant gas adapted to etch material disposed in thru holes of a substrate.
Claim 8
Dependent Claim
21 words
The system in accordance with claim 1 wherein said first electrode and said second electrode are substantially parallel to one another.
Claim 9
Dependent Claim
140 words
In a plasma reactor chamber, apparatus for generating uniform gas flow comprising: (a) a plurality of hollow electrodes disposed in said chamber substantially parallel to one another, each of said electrodes having two major surfaces, each of said major surfaces having a plurality of apertures therein; (b) a first radio frequency power source operatively connected to alternate ones of said electrodes for generating an electrical field; (c) a second radio frequency power source operatively connected to the remaining ones of said electrodes for generating an electrical field; (d) means for supporting a substrate intermediate each pair of said electrodes and substantially parallel thereto; and (e) means for introducing a reactant gas to be converted into a reactive species by said radio frequency electrical field through said electrodes, said electrodes being adapted to distribute gas uniformly across each of the substrates.
Claim 10
Dependent Claim
140 words
In a plasma reactor chamber, apparatus for generating uniform gas flow comprising: (a) a plurality of hollow electrodes disposed in said chamber substantially parallel to one another, each of said electrodes having two major surfaces, each of said major surfaces having a plurality of apertures therein; (b) a first radio frequency power source operatively connected to alternate ones of said electrodes for generating an electrical field; (c) a second radio frequency power source operatively connected to the remaining ones of said electrodes for generating an electrical field; (d) means for supporting a substrate intermediate each pair of said electrodes and substantially parallel thereto; and (e) means for introducing a reactant gas to be converted into a reactive species by said radio frequency electrical field through said electrodes, said electrodes being adapted to distribute gas uniformly across each of the substrates.
Claim 11
Dependent Claim
27 words
The apparatus in accordance with claim 8 wherein said means for supporting a substrate is adapted to support a substrate having a plurality of thru holes therein.
Claim 12
Dependent Claim
21 words
The apparatus in accordance with claim 9 further comprising a reactant gas to etch material disposed in thru holes of substrates.
Claim 13
Dependent Claim
20 words
The apparatus in accordance with claim 9 further comprising (f) means for maintaining the substrates at a fixed voltage potential.
Claim 14
Dependent Claim
21 words
The apparatus in accordance with claim 11 further comprising: (g) means operatively connected to said reactor chamber for exhausting gas therefrom.
Claim 15
Dependent Claim
40 words
The apparatus in accordance with claim 11 further comprising: (g) gas distribution means operatively connected to each of said electrodes for introducing gas directly and uniformly thereto and including means to control gas flow into each of said electrodes independently.
Claim 16
Dependent Claim
15 words
The apparatus in accordance with claim 13 wherein said gas distribution means comprises a manifold.
Claim 17
Dependent Claim
17 words
The apparatus in accordance with claim 8 wherein said apertures in each of said electrodes are tapered.
Claim 18
Dependent Claim
28 words
The apparatus in accordance with claim 8 wherein said means for supporting a substrate is adapted to support a substrate which comprises a portion of a semiconductor device.