Vertical MOSFET with current monitor utilizing common drain current mirror

Claim 1

In a controlled current circuit, the improvement comprising a monolithic semi-conductor component performing the same function with substantially the same characteristics as a vertical metal/oxide/semi-conductor field effect transistor (MOSFET) and including an additional terminal providing an output voltage related to the current flowing in the device, consisting essentially of: a. a drain terminal; b. a gate terminal; c. at least one source terminal; d. a feedback terminal having voltage (Vf); e. a first vertical MOSFET having an intrinsic source, an intrinsic body, an intrinsic gate and an intrinsic drain and having its said intrinsic source connected to one said component source terminal, having its said intrinsic body connected to its said intrinsic source, having its said intrinsic gate connected to said component gate terminal, and having its said instrinsic drain connected to said component drain terminal; f. a second vertical MOSFET formed in the same substrate as the first MOSFET so that its intrinsic drain is formed by the same semi-conductor material as that of the first, making both drains necessarily and inseparably connected; a second MOSFET body connected to its intrinsic source, its intrinsic gate connected to said component gate terminal, and its intrinsic source connected to a first resistor (Rf); g. said first resistor (Rf) being serially connected to said second MOSFET intrinsic source, with the junction of said resistor and said source of said second MOSFET being connected with said component feedback terminal, having the opposite node of said resistor connected to a said component source terminal.