Photoconductive member with a-Si; a-(Si/Ge) and a-(Si/C) layers

Claim 1

A photoconductive member comprising a substrate for photoconductive member and a light-receiving layer exhibiting photoconductivity, said light-receiving layer having a layer constitution in which a first layer (I) comprising an amorphous material containing silicon atoms, a second layer (II) comprising an amorphous material containing silicon atoms and germanium atoms and a third layer (III) comprising an amorphous material containing silicon atoms and carbon atoms are successively provided from the substrate side, and the germanium atoms contained in said second layer (II) being distributed ununiformly in the direction of the thickness said layer and being present in amounts from 1 to 9.5×10 5 atomic ppm and wherein hydrogen atoms and/or halogen atoms are contained in both the first layer (I) and the second layer (II); and wherein the content of hydrogen and/or halogen atoms (i) in the first layer (the sum of both when both are contained) is 1 to 40 atomic % and (ii) the content of the hydrogen atoms and/or halogen atoms contained in the second layer (ii) (the sum of both when both are contained) is 0.01 to 40 atomic %.