US4595944A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Resistor structure for transistor having polysilicon base contacts
Assignee: International Business Machines Corp
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Filing: 1983-12-29
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Granted: 1986-06-17
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Expires: 2003-12-29
Abstract
Abstract Disclosed is a dumbbell-shaped resistor structure fabricated in a semiconductor substrate for determining the resistivity of the intrinsic base of a polysilicon base transistor. The structure includes an n-doped base region having two large parts separated by a narrow part, resembling a flattened dumbbell, each of which extends into the substrate. A p-type emitter region extends a distance into a portion of the narrow and the second large parts of the base region. An n-type reach-through region extends from the emitter region through the base region electrically isolating a portion of the narrow and second large parts of the base region from the remainder of the base region and forming an electrically continuous p-type path between the first large part of the base region and the portion of the second large part within the reach-through region.
Inventors
- 👤 Igor Antipov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 05:28
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/177; H10D1/00; H10D1/40; H10D1/43; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
164 words
A resistor structure comprising: a semiconductor layer of a first conductivity type; a first region of the opposite conductivity type extending a distance into said layer from a surface thereof, said region including first and second sections separated by an intermediate section; a second region of the first conductivity type extending a distance from said surface into a portion of the intermediate and second sections of the first region; and a third region of the first conductivity type extending from the second region through the underlying first region thereby electrically separating portions of the intermediate and second sections of the first region interior to said third region from the remainder of the intermediate and second sections of the first region and, thereby, forming an electrically continuous path of the opposite conductivity type between the first section of the first region and the portion of said second section within the third region and contiguous with said portion of the intermediate part within said third region.
Claim 2
Dependent Claim
164 words
A resistor structure comprising: a semiconductor layer of a first conductivity type; a first region of the opposite conductivity type extending a distance into said layer from a surface thereof, said region including first and second sections separated by an intermediate section; a second region of the first conductivity type extending a distance from said surface into a portion of the intermediate and second sections of the first region; and a third region of the first conductivity type extending from the second region through the underlying first region thereby electrically separating portions of the intermediate and second sections of the first region interior to said third region from the remainder of the intermediate and second sections of the first region and, thereby, forming an electrically continuous path of the opposite conductivity type between the first section of the first region and the portion of said second section within the third region and contiguous with said portion of the intermediate part within said third region.
Claim 3
Dependent Claim
14 words
The structure as recited in claim 1 wherein said first conductivity type is n-type.
Claim 4
Dependent Claim
12 words
The structure as in claim 2 wherein said semiconductor layer is silicon.
Claim 5
Dependent Claim
29 words
The structure as recited in claim 3 further comprising p-type polysilicon contacts for electrically contacting said first section and the portion of the second section within said third region.
Claim 6
Dependent Claim
180 words
A resistor structure comprising: an n-type single crystal silicon semiconductor layer formed on a substrate; a first region of p-type conductivity extending a distance into the silicon layer from a surface thereof, said first region including a first section and a second slightly enlarged section separated from the first section by an intermediate section; a second region of n-type conductivity extending a distance from said surface into a portion of said intermediate and second enlarged sections of the first region; an open-loop shaped third region of n-type conductivity extending from the second region through the underlying first region, thereby, forming portions of said intermediate and second enlarged sections of the first region interior to said third region which are in effect electrically isolated from the remainder of the intermediate and second enlarged sections of the first region and, thereby, forming an electrically continuous path of p-type conductivity between said first section of the first region and the portion of said second enlarged section within the third region and contiguous with said portion of the intermediate part within said third region.
Claim 7
Dependent Claim
180 words
A resistor structure comprising: an n-type single crystal silicon semiconductor layer formed on a substrate; a first region of p-type conductivity extending a distance into the silicon layer from a surface thereof, said first region including a first section and a second slightly enlarged section separated from the first section by an intermediate section; a second region of n-type conductivity extending a distance from said surface into a portion of said intermediate and second enlarged sections of the first region; an open-loop shaped third region of n-type conductivity extending from the second region through the underlying first region, thereby, forming portions of said intermediate and second enlarged sections of the first region interior to said third region which are in effect electrically isolated from the remainder of the intermediate and second enlarged sections of the first region and, thereby, forming an electrically continuous path of p-type conductivity between said first section of the first region and the portion of said second enlarged section within the third region and contiguous with said portion of the intermediate part within said third region.
Claim 8
Dependent Claim
36 words
The structure as in claim 5 wherein said continuous path is rectangular in shape, the longer dimension of said rectangular shape being the shortest distance in said contiguous portion between said first and second enlarged sections.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-16 | 1989-12-16 | 1990-06-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-16 | 1993-12-16 | 1994-06-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-16 | 1997-12-16 | 1998-06-17 | $7700.00 | Window Closed / Lapsed |