US4595644A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photoconductive member of A-Si(Ge) with nonuniformly distributed nitrogen
Assignee: Canon Inc
•
Filing: 1984-09-07
•
Granted: 1986-06-17
•
Expires: 2004-09-07
Abstract
Abstract A photoconductive member comprises a substrate and a layer constituted of an amorphous material containing Si and Ge and exhibiting photoconductivity, said layer having a layer region containing nitrogen ununiformly in the direction of layer thickness, the distribution concentration curve of nitrogen in the direction of layer thickness being smooth and the maximum distribution concentration being present in said layer. An amorphous layer of Si containing at least one of oxygen and carbon may overlie the above mentioned layer.
Inventors
- 👤 Keishi Saitoh
- 👤 Yukihiko Ohnuki
- 👤 Shigeru Ohno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:32
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08228; G03G5/08235; G03G5/08242
Claims Analysis
Total Claims: 104
Claim 1
Independent Claim
76 words
A photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of an amorphous material containing silicon atoms and germanium atoms and exhibiting photoconductivity, the light receiving layer having a layer region (N) containing nitrogen atoms ununiformly in the direction of layer thickness, the distribution concentration curve of nitrogen atoms in the direction of layer thickness being smooth, and the maximum distribution concentration being present within the light receiving layer.
Claim 2
Dependent Claim
76 words
A photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of an amorphous material containing silicon atoms and germanium atoms and exhibiting photoconductivity, the light receiving layer having a layer region (N) containing nitrogen atoms ununiformly in the direction of layer thickness, the distribution concentration curve of nitrogen atoms in the direction of layer thickness being smooth, and the maximum distribution concentration being present within the light receiving layer.
Claim 3
Dependent Claim
18 words
A photoconductive member according to claim 1 in which hydrogen atoms are contained in the light receiving layer.
Claim 4
Dependent Claim
18 words
A photoconductive member according to claim 1 in which halogen atoms are contained in the light receiving layer.
Claim 5
Dependent Claim
27 words
A photoconductive member according to claim 1 in which the distribution of germanium atoms in the light receiving layer is ununiform in the direction of layer thickness.
Claim 6
Dependent Claim
27 words
A photocondutive member according to claim 1 in which the distribution of germanium atoms in the light receiving layer is uniform in the direction of layer thickness.
Claim 7
Dependent Claim
22 words
A photoconductive member according to claim 1 in which a substance (C) for controlling conductivity is contained in the light receiving layer.
Claim 8
Dependent Claim
25 words
A photoconductive member according to claim 6 in which the substance (C) for controlling conductivity is an atom belonging to Group III of Periodic Table.
Claim 9
Dependent Claim
25 words
A photoconductive member according to claim 6 in which the substance (C) for controlling conductivity is an atom belonging to Group V of Periodic Table.
Claim 10
Dependent Claim
30 words
A photoconductive member according to claim 1 in which the distribution of germanium atoms in the light receiving layer is such that germanium atoms are enriched at the substrate side.
Claim 11
Dependent Claim
42 words
A photoconductive member according to claim 4 in which the maximum value Cmax of the distribution concentration of germanium atoms in the direction of layer thickness is 1000 atomic ppm or more based on the sum of silicon atoms and germanium atoms.
Claim 12
Dependent Claim
34 words
A photoconductive member according to claim 1 in which the content of germanium atoms in the light receiving layer is 1-9.5×10 5 atomic ppm based on the sum of silicon atom and germanium atoms.
Claim 13
Dependent Claim
24 words
A photoconductive member according to claim 1 in which the nitrogen atoms are distributed throughout the whole layer region of the light receiving layer.
Claim 14
Dependent Claim
28 words
A photoconductive member according to claim 1 in which the nitrogen atoms are contained only in a layer region which is a part of the light receiving layer.
Claim 15
Dependent Claim
37 words
A photoconductive member according to claim 1 in which the nitrogen atoms are distributed such that the distribution concentration C(N) in the direction of layer thickness is ununiform in the layer region (N) containing the nitrogen atoms.
Claim 16
Dependent Claim
34 words
A photoconductive member according to claim 14 in which the maximum distribution concentration Cmax of distribution concentration C(N) is 67 atomic % or less based on the sum of silicon, germanium and nitrogen atoms.
Claim 17
Dependent Claim
33 words
A photoconductive member according to claim 14 in which the content of nitrogen atoms in the layer region (N) is 0.001-50 atomic % based on the sum of silicon, germanium and nitrogen atoms.
Claim 18
Dependent Claim
61 words
A photoconductive member according to claim 14 in which the upper limit of nitrogen content in the layer region (N) is 30 atomic % based on the sum of silicon, germanium and nitrogen atoms when the ratio of the layer thickness To of the layer region (N) to the layer thickness T of the light receiving layer is 2/5 or more.
Claim 19
Dependent Claim
28 words
A photoconductive member according to claim 6 in which the content of the substance (C) for controlling conductivity in the light receiving layer is 0.01-5×10 4 atomic ppm.
Claim 20
Dependent Claim
23 words
A photoconductive member according to claim 2 in which the content of hydrogen atoms in the light receiving layer is 0.01-40 atomic %.
Claim 21
Dependent Claim
19 words
A photoconductive member according to claim 1 in which the layer thickness of the light receiving layer is 1-100μ.
Claim 22
Dependent Claim
101 words
A photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of a first layer (I) overlying the substrate and comprising an amorphous material containing silicon atoms and germanium atoms and a second layer (II) overlying the first layer (I) and comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms, nitrogen atoms being contained in the first layer (I), the concentration distribution curve of the nitrogen atoms in the direction of layer thickness being smooth, and the maximum distribution concentration being present within the first layer (I).
Claim 23
Dependent Claim
101 words
A photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of a first layer (I) overlying the substrate and comprising an amorphous material containing silicon atoms and germanium atoms and a second layer (II) overlying the first layer (I) and comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms, nitrogen atoms being contained in the first layer (I), the concentration distribution curve of the nitrogen atoms in the direction of layer thickness being smooth, and the maximum distribution concentration being present within the first layer (I).
Claim 24
Dependent Claim
18 words
A photoconductive member according to claim 21 in which hydrogen atoms are contained in the light receiving layer.
Claim 25
Dependent Claim
18 words
A photoconductive member according to claim 21 in which halogen atoms are contained in the light receiving layer.
Claim 26
Dependent Claim
26 words
A photoconductive member according to claim 21 in which the germanium atoms are distributed ununiformly in the direction of layer thickness in the first layer (I).
Claim 27
Dependent Claim
26 words
A photoconductive member according to claim 21 in which the germanium atoms are distributed uniformly in the direction of layer thickness in the first layer (I).
Claim 28
Dependent Claim
22 words
A photoconductive member according to claim 21 in which a substance (C) for controlling conductivity is contained in the first layer (I).
Claim 29
Dependent Claim
25 words
A photoconductive member according to claim 26 in which the substance (C) for controlling conductivity is an atom of Group III of the Periodic Table.
Claim 30
Dependent Claim
25 words
A photoconductive member according to claim 26 in which the substance (C) for controlling conductivity is an atom of Group V of the Periodic Table.
Claim 31
Dependent Claim
29 words
A photoconductive member according to claim 21 in which the germanium atoms are distributed in the first layer (I) such that germanium atoms are enriched at the substrate side.
Claim 32
Dependent Claim
41 words
A photoconductive member according to claim 24 in which the maximum value Cmax of distribution concentration of germanium atoms in the direction of layer thickness is 1000 atomic ppm or more based on the sum of silicon atoms and germanium atoms.
Claim 33
Dependent Claim
34 words
A photoconductive member according to claim 21 in which the content of germanium atoms in the first layer (I) is 1-9.5×10 5 atomic ppm based on the sum of silicon atoms and germanium atoms.
Claim 34
Dependent Claim
24 words
A photoconductive member according to claim 21 in which the nitrogen atoms are contained throughout the whole layer region of the first layer (I).
Claim 35
Dependent Claim
28 words
A photoconductive member according to claim 21 in which the nitrogen atoms are contained only in a layer region which is a part of the first layer (I).
Claim 36
Dependent Claim
37 words
A photoconductive member according to claim 21 in which the nitrogen atoms are distributed in the layer region (N) containing the nitrogen atoms such that the distribution concentration C(N) is ununiform in the direction of layer thickness.
Claim 37
Dependent Claim
34 words
A photoconductive member according to claim 34 in which the maximum distribution concentration Cmax of distribution concentration C(N) is 67 atomic % or less based on the sum of silicon, germanium and nitrogen atoms.
Claim 38
Dependent Claim
33 words
A photoconductive member according to claim 34 in which the content of nitrogen atoms in the layer region (N) is 0.001-50 atomic % based on the sum of silicon germanium and nitrogen atoms.
Claim 39
Dependent Claim
63 words
A photoconductive member according to claim 34 in which when the ratio of the layer thickness To of the layer region (N) to the layer thickness T of the light receiving layer is 2/5 or more, the upper limit of the nitrogen atoms contained in the layer region (N) is 30 atomic % based on the sum of silicon, germanium and nitrogen atoms.
Claim 40
Dependent Claim
29 words
A photoconductive member according to claim 26 in which the content of the substance (C) for controlling conductivity characteristics in the first layer (I) is 0.01-5×10 4 atomic ppm.
Claim 41
Dependent Claim
23 words
A photoconductive member according to claim 22 in which the content of hydrogen atoms in the first layer (I) is 0.01-40 atomic %.
Claim 42
Dependent Claim
15 words
A photoconductive member according to claim 21 in which the first layer (I) is 1-100μ.
Claim 43
Dependent Claim
16 words
A photoconductive member according to claim 21 in which the second layer (II) contains hydrogen atoms.
Claim 44
Dependent Claim
16 words
A photoconductive member according to claim 21 in which the second layer (II) contains halogen atoms.
Claim 45
Dependent Claim
16 words
A photoconductive member according to claim 21 in which the second layer (II) is 0.03-30μ thick.
Claim 46
Dependent Claim
95 words
A photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, the first layer region (G) and the second layer region (S) being provided in the mentioned order on the substrate, the light receiving layer containing nitrogen atoms and the concentration distribution curve of nitrogen atom being smooth and the maximum distribution concentration being present within the light receiving layer.
Claim 47
Dependent Claim
95 words
A photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, the first layer region (G) and the second layer region (S) being provided in the mentioned order on the substrate, the light receiving layer containing nitrogen atoms and the concentration distribution curve of nitrogen atom being smooth and the maximum distribution concentration being present within the light receiving layer.
Claim 48
Dependent Claim
29 words
A photoconductive member according to claim 44 in which hydrogen atoms are contained in at least one of the first layer region (G) and the second layer region (S).
Claim 49
Dependent Claim
29 words
A photoconductive member according to claim 44 in which halogen atoms are contained in at least one of the first layer region (G) and the second layer region (S).
Claim 50
Dependent Claim
20 words
A photoconductive member according to claim 44 in which germanium atoms are ununiformly distributed in the first layer region (S).
Claim 51
Dependent Claim
20 words
A photoconductive member according to claim 44 in which germanium atoms are uniformly distributed in the first layer region (S).
Claim 52
Dependent Claim
22 words
A photoconductive member according to claim 44 in which the substance (C) for controlling conductivity is contained in the light receiving layer.
Claim 53
Dependent Claim
25 words
A photoconductive member according to claim 49 in which the substance (C) for controlling conductivity is an atom of Group III of the Periodic Table.
Claim 54
Dependent Claim
25 words
A photoconductive member according to claim 49 in which the substance (C) for controlling conductivity is an atom of Group V of the Periodic Table.
Claim 55
Dependent Claim
29 words
A photoconductive member according to claim 44 in which germanium atoms are distributed in the first layer region (G) such that germanium atoms are enriched at the substrate side.
Claim 56
Dependent Claim
41 words
A photoconductive member according to claim 47 in which the maximum value Cmax of distribution concentration of germanium atoms in the direction of layer thickness is 1000 atomic ppm or more based on the sum of silicon atoms and germanium atoms.
Claim 57
Dependent Claim
35 words
A photoconductive member according to claim 44 in which the content of germanium atoms in the first layer region (G) is 1-9.5×10 5 atomic ppm based on the sum of silicon atoms and germanium atoms.
Claim 58
Dependent Claim
24 words
A photoconductive member according to claim 44 in which the nitrogen atoms are contained throughout the whole layer region of the light receiving layer.
Claim 59
Dependent Claim
28 words
A photoconductive member according to claim 44 in which the nitrogen atoms are contained only in a layer region which is a part of the light receiving layer.
Claim 60
Dependent Claim
36 words
A photoconductive member according to claim 44 in which the nitrogen atoms are distributed in the layer region (N) containing nitrogen atoms such that the distribution content C(N) is ununiform in the direction of layer thickness.
Claim 61
Dependent Claim
34 words
A photoconductive member according to claim 57 in which the maximum distribution concentration Cmax of distribution concentration C(N) is 67 atomic % or less based on the sum of silicon, germanium, and nitrogen atoms.
Claim 62
Dependent Claim
33 words
A photoconductive member according to claim 57 in which the content of nitrogen atoms in the layer region (N) is 0.001-50 atomic % based on the sum of silicon, germanium, and nitrogen atoms.
Claim 63
Dependent Claim
64 words
A photoconductive member according to claim 57 in which the upper limit of the content of nitrogen atoms in the layer region (N) is 30 atomic % based on the sum of silicon, germanium, and nitrogen atoms when the ratio of the layer thickness To of the layer region (N) to the layer thickness T of the first layer (I) is 2/5 or more.
Claim 64
Dependent Claim
29 words
A photoconductive member according to claim 49 in which the content of the substance (C) for controlling conductivity characteristics in the light receiving layer is 0.01-5×10 4 atomic ppm.
Claim 65
Dependent Claim
24 words
A photoconductive member according to claim 45 in which the content of hydrogen atoms in the first layer region (G) is 0.01-40 atomic %.
Claim 66
Dependent Claim
19 words
A photoconductive member according to claim 44 in which the layer thickness of the light receiving layer is 1-100μ.
Claim 67
Dependent Claim
118 words
A photoconductive member which comprises a substrate for a photoconductive member, a light receiving layer constituted of a first layer (I) having a first layer region (G) overlying the substrate and comprising an amorphous material containing germanium atoms and a second layer region (S) overlying the first layer region (G), comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, and a second layer (II) overlying the first layer (I) and comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms, the first layer (I) containing nitrogen atoms, the concentration distribution curve of nitrogen atom being smooth, and the maximum distribution concentration of nitrogen atom being present within the first layer.
Claim 68
Dependent Claim
118 words
A photoconductive member which comprises a substrate for a photoconductive member, a light receiving layer constituted of a first layer (I) having a first layer region (G) overlying the substrate and comprising an amorphous material containing germanium atoms and a second layer region (S) overlying the first layer region (G), comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, and a second layer (II) overlying the first layer (I) and comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms, the first layer (I) containing nitrogen atoms, the concentration distribution curve of nitrogen atom being smooth, and the maximum distribution concentration of nitrogen atom being present within the first layer.
Claim 69
Dependent Claim
29 words
A photoconductive member according to claim 64 in which hydrogen atoms are contained in at least one of the first layer region (G) and the second layer region (S).
Claim 70
Dependent Claim
29 words
A photoconductive member according to claim 64 in which halogen atoms are contained in at least one of the first layer region (G) and the second layer region (S).
Claim 71
Dependent Claim
20 words
A photoconductive member according to claim 64 in which germanium atoms are ununiformly distributed in the first layer region (G).
Claim 72
Dependent Claim
20 words
A photoconductive member according to claim 64 in which germanium atoms are uniformly distributed in the first layer region (G).
Claim 73
Dependent Claim
22 words
A photoconductive member according to claim 64 in which a substance (C) for controlling conductivity is contained in the first layer (I).
Claim 74
Dependent Claim
25 words
A photoconductive member according to claim 69 in which the substance (C) for controlling conductivity is an atom of Group III of the Periodic Table.
Claim 75
Dependent Claim
25 words
A photoconductive member according to claim 69 in which the substance (C) for controlling conductivity is an atom of Group V of the Periodic Table.
Claim 76
Dependent Claim
29 words
A photoconductive member according to claim 67 in which germanium atoms are distributed in the first layer region (G) such that germanium atoms are enriched at the substrate side.
Claim 77
Dependent Claim
41 words
A photoconductive member according to claim 67 in which the maximum value Cmax of distribution concentration of germanium atoms in the direction of layer thickness is 1000 atomic ppm or more based on the sum of silicon atoms and germanium atoms.
Claim 78
Dependent Claim
35 words
A photoconductive member according to claim 64 in which the content of germanium atoms in the first layer region (G) is 1-9.5×10 5 atomic ppm based on the sum of silicon atoms and germanium atoms.
Claim 79
Dependent Claim
24 words
A photoconductive member according to claim 64 in which the nitrogen atoms are contained throughout the whole layer region of the first layer (I).
Claim 80
Dependent Claim
28 words
A photoconductive member according to claim 64 in which the nitrogen atoms are contained only in a layer region which is a part of the first layer (I).
Claim 81
Dependent Claim
36 words
A photoconductive member according to claim 64 in which the nitrogen atoms are distributed in the layer region (N) containing nitrogen atoms such that the distribution content C(N) is ununiform in the direction of layer thickness.
Claim 82
Dependent Claim
34 words
A photoconductive member according to claim 77 in which the maximum distribution concentration Cmax of distribution concentation C(N) is 67 atomic % or less based on the sum of silicon, germanium, and nitrogen atoms.
Claim 83
Dependent Claim
33 words
A photoconductive member according to claim 77 in which the content of nitrogen atoms in the layer region (N) is 0.001-50 atomic % based on the sum of silicon, germanium, and nitrogen atoms.
Claim 84
Dependent Claim
64 words
A photoconductive member according to claim 77 in which the upper limit of the content of nitrogen atoms in the layer region (N) is 30 atomic % based on the sum of silicon, germanium, and nitrogen atoms when the ratio of the layer thickness To of the layer region (N) to the layer thickness T of the first layer (I) is 2/5 or more.
Claim 85
Dependent Claim
29 words
A photoconductive member according to claim 69 in which the content of the substance (C) for controlling conductivity characteristics in the first layer (I) is 0.01-5×10 4 atomic ppm.
Claim 86
Dependent Claim
24 words
A photoconductive member according to claim 65 in which the content of hydrogen atoms in the first layer region (G) is 0.01-40 atomic %.
Claim 87
Dependent Claim
19 words
A photoconductive member according to claim 64 in which the layer thickness of the first layer (I) is 1-100μ.
Claim 88
Dependent Claim
16 words
A photoconductive member according to claim 64 in which the second layer (II) contains hydrogen atoms.
Claim 89
Dependent Claim
16 words
A photoconductive member according to claim 64 in which the second layer (II) contains halogen atoms.
Claim 90
Dependent Claim
16 words
A photoconductive member according to claim 64 in which the second layer (II) is 0.03-30μ thick.
Claim 91
Dependent Claim
21 words
A photoconductive member according to claim 64 in which the second layer region (S) contains 1-40 atomic % of hydrogen atoms.
Claim 92
Dependent Claim
21 words
A photoconductive member according to claim 45 in which the second layer region (S) contains 1-40 atomic % of hydrogen atoms.
Claim 93
Dependent Claim
18 words
A photoconductive member according to claim 2 in which halogen atoms are contained in the light receiving layer.
Claim 94
Dependent Claim
18 words
A photoconductive member according to claim 22 in which halogen atoms are contained in the light receiving layer.
Claim 95
Dependent Claim
29 words
A photoconductive member according to claim 45 in which halogen atoms are contained in at least one of the first layer region (G) and the second layer region (S).
Claim 96
Dependent Claim
29 words
A photoconductive member according to claim 65 in which halogen atoms are contained in at least one of the first layer region (G) and the second layer region (S).
Claim 97
Dependent Claim
104 words
An electrophotographic process which comprises: (a) applying a charging treatment to a photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of an amorphous material containing silicon atoms and germanium atoms and exhibiting photoconductivity, the light receiving layer having a layer region (N) containing nitrogen atoms nonuniformly in the direction of layer thickness, the distribution concentration curve of nitrogen atoms in the direction of layer thickness being smooth, and the maximum distribution concentration being present within the light receiving layer; and (b) irradiating said photoconductive member with an electromagnetic wave carrying information, thereby forming an electrostatic image.
Claim 98
Dependent Claim
104 words
An electrophotographic process which comprises: (a) applying a charging treatment to a photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of an amorphous material containing silicon atoms and germanium atoms and exhibiting photoconductivity, the light receiving layer having a layer region (N) containing nitrogen atoms nonuniformly in the direction of layer thickness, the distribution concentration curve of nitrogen atoms in the direction of layer thickness being smooth, and the maximum distribution concentration being present within the light receiving layer; and (b) irradiating said photoconductive member with an electromagnetic wave carrying information, thereby forming an electrostatic image.
Claim 99
Dependent Claim
129 words
An electrophotographic process which comprises: (a) applying a charging treatment to a photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of a first layer (I) overlying the substrate and comprising an amorphous material containing silicon atoms and germanium atoms and a second layer (II) overlying the first layer (I) and comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms, nitrogen atoms being contained in the first layer (I), the concentation distribution curve of the nitrogen atoms in the direction of layer thickness being smooth, and the maximum distribution concentration being present within the first layer (I); and (b) irradiating said photoconductive member with an electromagnetic wave carrying information, thereby forming an electrostatic image.
Claim 100
Dependent Claim
129 words
An electrophotographic process which comprises: (a) applying a charging treatment to a photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of a first layer (I) overlying the substrate and comprising an amorphous material containing silicon atoms and germanium atoms and a second layer (II) overlying the first layer (I) and comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms, nitrogen atoms being contained in the first layer (I), the concentation distribution curve of the nitrogen atoms in the direction of layer thickness being smooth, and the maximum distribution concentration being present within the first layer (I); and (b) irradiating said photoconductive member with an electromagnetic wave carrying information, thereby forming an electrostatic image.
Claim 101
Dependent Claim
123 words
An electrophotographic process which comprises: (a) applying a charging treatment to a photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, the first layer region (G) and the second layer region (S) being provided in the mentioned order on the substrate, the light receiving layer containing nitrogen atoms and the concentration distribution curve of nitrogen atom being smooth and the maximum distribution concentration being present within the light receiving layer; and (b) irradiating said photoconductive member with an electromagnetic wave carrying information, thereby forming an electrostatic image.
Claim 102
Dependent Claim
123 words
An electrophotographic process which comprises: (a) applying a charging treatment to a photoconductive member which comprises a substrate for a photoconductive member and a light receiving layer constituted of a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, the first layer region (G) and the second layer region (S) being provided in the mentioned order on the substrate, the light receiving layer containing nitrogen atoms and the concentration distribution curve of nitrogen atom being smooth and the maximum distribution concentration being present within the light receiving layer; and (b) irradiating said photoconductive member with an electromagnetic wave carrying information, thereby forming an electrostatic image.
Claim 103
Dependent Claim
147 words
An electrophotographic process which comprises: (a) applying a charging treatment to a photoconductive member which comprises a substrate for a photoconductive member, a light receiving layer constituted of a first layer (I) having a first layer region (G) overlying the substrate and comprising an amorphous material containing germanium atoms and a second layer region (S) overlying the first layer region (G), comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, and a second layer (II) overlying the first layer (I) and comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms, the first layer (I) containing nitrogen atoms, the concentration distribution curve of nitrogen atom being smooth, and the maximum distribution concentration of nitrogen atom being present within the first layer; and (b) irradiating said photoconductive member with a an electromagnetic wave carrying information, thereby forming an electrostatic image.
Claim 104
Dependent Claim
147 words
An electrophotographic process which comprises: (a) applying a charging treatment to a photoconductive member which comprises a substrate for a photoconductive member, a light receiving layer constituted of a first layer (I) having a first layer region (G) overlying the substrate and comprising an amorphous material containing germanium atoms and a second layer region (S) overlying the first layer region (G), comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, and a second layer (II) overlying the first layer (I) and comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms, the first layer (I) containing nitrogen atoms, the concentration distribution curve of nitrogen atom being smooth, and the maximum distribution concentration of nitrogen atom being present within the first layer; and (b) irradiating said photoconductive member with a an electromagnetic wave carrying information, thereby forming an electrostatic image.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-16 | 1989-12-16 | 1990-06-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-16 | 1993-12-16 | 1994-06-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-16 | 1997-12-16 | 1998-06-17 | $7700.00 | Window Closed / Lapsed |