Patent US4593306A successfully refreshed from Google Patents.
US4593306A
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Information storage medium and method of recording and retrieving information thereon
Assignee: Battelle Development Corp
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Filing: 1983-02-24
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Granted: 1986-06-03
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Expires: 2003-02-24
Abstract
Abstract Information storage medium comprising a semiconductor doped with first and second impurities or dopants. Preferably, one of the impurities is introduced by ion implantation. Conductive electrodes are photolithographically formed on the surface of the medium. Information is recorded on the medium by selectively applying a focused laser beam to discrete regions of the medium surface so as to anneal discrete regions of the medium containing lattice defects introduced by the ion-implanted impurity. Information is retrieved from the storage medium by applying a focused laser beam to annealed and non-annealed regions so as to produce a photovoltaic signal at each region.
Inventors
- 👤 D. D. Marchant
- 👤 Stefan Begej
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:14
CPC Classifications
G; G11; G11B; G11B11/00; G11B11/08; G11B9/00; G11B9/08; G11C; G11C13/00; G11C13/04; G11C13/047
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
85 words
Information storage medium, comprising: a silicon semiconductor having a doped portion containing boron as a first impurity and arsenic as a second impurity and having a p-n junction, said doped portion containing non-annealed lattice defects, spaced conductive aluminum electrodes disposed in a circular concentric pattern so as to contact a surface of said doped portion on one side of said p-n junction, a conductive layer of material disposed so as to contact a surface of the semiconductor or another side of the said p-n junction.
Claim 2
Dependent Claim
85 words
Information storage medium, comprising: a silicon semiconductor having a doped portion containing boron as a first impurity and arsenic as a second impurity and having a p-n junction, said doped portion containing non-annealed lattice defects, spaced conductive aluminum electrodes disposed in a circular concentric pattern so as to contact a surface of said doped portion on one side of said p-n junction, a conductive layer of material disposed so as to contact a surface of the semiconductor or another side of the said p-n junction.
Claim 3
Dependent Claim
94 words
Article for storing information in binary form, comprising: a semiconductor having a doped portion containing first and second impurities and p-n junction, said doped portion containing non-annealed lattice defects, spaced conductive electrodes disposed in a circular concentric pattern so as to contact a surface of said doped portion on one side of said p-n junction, at least one discrete, localized annealed region in said doped portion representative of one state of said binary form, and at least one discrete, non-annealed region in said doped portion representative of the other state of said binary form.
Claim 4
Dependent Claim
94 words
Article for storing information in binary form, comprising: a semiconductor having a doped portion containing first and second impurities and p-n junction, said doped portion containing non-annealed lattice defects, spaced conductive electrodes disposed in a circular concentric pattern so as to contact a surface of said doped portion on one side of said p-n junction, at least one discrete, localized annealed region in said doped portion representative of one state of said binary form, and at least one discrete, non-annealed region in said doped portion representative of the other state of said binary form.
Claim 5
Dependent Claim
20 words
Article according to claim 2, wherein said semiconductor is silicon and said first and second impurities are boron and arsenic.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-02 | 1989-12-02 | 1990-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-02 | 1993-12-02 | 1994-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-02 | 1997-12-02 | 1998-06-03 | $7700.00 | Window Closed / Lapsed |