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US4593199A Expired / Lapsed US ⏱️ 0.0 years remaining

Optical-to-optical image transducer capable of accepting X-radiation

Assignee: Energy Conversion Devices Inc
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Filing: 1985-01-22
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Granted: 1986-06-03
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Expires: 2005-01-22
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Abstract

Abstract A device and method for converting an X-ray image into a corresponding output image with light from a different source and a phosphorescent layer in conjunction with a liquid crystal light valve. The light valve includes a photosensor layer comprised of a deposited semiconductor material having distinct light and dark photoconductivities, the light photoconductivity being substantially greater than the dark photoconductivity. When impinged upon by an particular pattern of X-rays, the phosphorescent layer phosphoresces in a corresponding pattern, which phosphorescence in turn causes the semiconductor layer to be switched to its light photoconductivity in a pattern also corresponding to that of the input X-ray image. The pattern of switched semiconductor in the photosensor layer allows a biasing voltage to be switched over to the liquid crystal layer of the light valve in a corresponding pattern. This voltage pushes the liquid crystal over its electro-optic threshold thereby inducing an output image corresponding to the original input image.

Inventors

  • 👤 Zvi Yaniv
  • 👤 Robert R. Johnson

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 15:47
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/135

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 192 words
A liquid crystal light valve for accepting and transducing X-radiation, comprising: a layer of liquid crystal for modulating readout light; a dielectric mirror disposed on one side of said liquid crystal layer for reflecting modulated readout light; a photosensor layer disposed adjacent said dielectric mirror and opposite said liquid crystal layer, said photosensor comprising a deposited semiconductor material, said material having a light photoconductivity substantially greater than its dark photoconductivity; at least two transparent electrodes for receiving a bias voltage and applying it across said liquid crystal layer and said photosensor layer, one each disposed adjacent respective opposite sides of said photosensor and liquid crystal layers; at least one transparent substrate layer, said substrate layer being disposed adjacent the transparent electrode which is on the side of said crystal layer opposite said photosensor layer; and a phosphorescent layer, disposed adjacent said photosensor layer and opposite said liquid crystal layer for phosphorescing locally in a pattern corresponding to X-radiation incident thereupon, said local phosphorescence in turn stimulating a local increase in the photoconductivity of said semiconductor material, thereby resulting in local polarization of, and subsequent corresponding light emission from, said liquid crystal layer.
Claim 2
Dependent Claim 192 words
A liquid crystal light valve for accepting and transducing X-radiation, comprising: a layer of liquid crystal for modulating readout light; a dielectric mirror disposed on one side of said liquid crystal layer for reflecting modulated readout light; a photosensor layer disposed adjacent said dielectric mirror and opposite said liquid crystal layer, said photosensor comprising a deposited semiconductor material, said material having a light photoconductivity substantially greater than its dark photoconductivity; at least two transparent electrodes for receiving a bias voltage and applying it across said liquid crystal layer and said photosensor layer, one each disposed adjacent respective opposite sides of said photosensor and liquid crystal layers; at least one transparent substrate layer, said substrate layer being disposed adjacent the transparent electrode which is on the side of said crystal layer opposite said photosensor layer; and a phosphorescent layer, disposed adjacent said photosensor layer and opposite said liquid crystal layer for phosphorescing locally in a pattern corresponding to X-radiation incident thereupon, said local phosphorescence in turn stimulating a local increase in the photoconductivity of said semiconductor material, thereby resulting in local polarization of, and subsequent corresponding light emission from, said liquid crystal layer.
Claim 3
Dependent Claim 35 words
The light valve of claim 1 further including a reflective coating adjacent said phosphorescent layer and opposite said photosensor layer for increasing the intensity of the light from the phosphorescent layer incident on the photosensor.
Claim 4
Dependent Claim 28 words
The light valve of claim 1 wherein said deposited material is an amorphous semiconductor and has a maximum quantum efficiency in the green region of the light spectrum.
Claim 5
Dependent Claim 19 words
The light valve of claim 3 wherein said phosphorescent layer locally emits green light at points stimulated by X-radiation.
Claim 6
Dependent Claim 21 words
The light valve of claim 1 further including a second transparent glass substrate between said photosensor layer and said phosphorescent layer.
Claim 7
Dependent Claim 30 words
The light valve of claim 1 wherein the dark resistivity of said semiconductor material is generally greater than 10 11 Ω-cm and the light resistivity is approximately 10 8 Ω-cm.
Claim 8
Dependent Claim 19 words
The light valve of claim 1 wherein said liquid crystal layer is between approximately 2 and 6 microns thick.
Claim 9
Independent Claim 163 words
A method of accepting an X-radiation image and converting same into a corresponding output image with light from another source comprising: providing an X-ray image; causing said X-ray image to impinge on a phosphorescent screen so that said screen phosphoresces locally corresponding to the pattern of said impinging X-ray image; causing said local phosphorescence to impinge upon a layer of deposited semiconductor material, said material being capable of being switched between a dark photoconductivity and a light photoconductivity, said light photoconductivity being substantially greater than said dark photoconductivity, so that portions of said material corresponding to said local phosphorescence switch to said light photoconductivity; and applying a bias voltage across said semiconductor layer and a liquid crystal layer so that a current will be conducted by those areas of said semiconductor material which are switched to the light photoconductivity and thereby cause a polarization and light emission from said liquid crystal layer at points corresponding to said switched areas of said semiconductor material.
Claim 10
Independent Claim 163 words
A method of accepting an X-radiation image and converting same into a corresponding output image with light from another source comprising: providing an X-ray image; causing said X-ray image to impinge on a phosphorescent screen so that said screen phosphoresces locally corresponding to the pattern of said impinging X-ray image; causing said local phosphorescence to impinge upon a layer of deposited semiconductor material, said material being capable of being switched between a dark photoconductivity and a light photoconductivity, said light photoconductivity being substantially greater than said dark photoconductivity, so that portions of said material corresponding to said local phosphorescence switch to said light photoconductivity; and applying a bias voltage across said semiconductor layer and a liquid crystal layer so that a current will be conducted by those areas of said semiconductor material which are switched to the light photoconductivity and thereby cause a polarization and light emission from said liquid crystal layer at points corresponding to said switched areas of said semiconductor material.
Claim 11
Dependent Claim 28 words
The method of claim 8 further comprising the step of providing a reflective coating for increasing the light intensity of said local phosphorescence impinging upon said semiconductor material.

References Cited (Backward Citations)

US3659149A Cited
US3829684A Cited
US3971931A Cited
US4485389A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-06-02 1989-12-02 1990-06-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-06-02 1993-12-02 1994-06-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-06-02 1997-12-02 1998-06-03 $7700.00 Window Closed / Lapsed

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