US4589027A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state image sensor
Assignee: Olympus Corp
•
Filing: 1985-06-12
•
Granted: 1986-05-13
•
Expires: 2005-06-12
Abstract
Abstract A solid state image sensor including a number of pixels each of which has a source region, a drain region and a signal readout gate electrode having a portion formed between the source and drain regions, a light receiving gate electrode formed separately from the signal readout gate electrode, and a transfer gate electrode, the source and drain regions being formed in a surface of an epitaxial layer and the light receiving gate electrode, transfer gate electrode and signal readout gate electrode being formed on the epitaxial layer via a gate insulating film. After light signal charges have been stored underneath the light receiving gate electrode for a desired shutter open period in all pixels, the light signal charges are transferred into portions in the epitaxial layer underneath the signal readout gate electrodes via the transfer gate electrodes. Then, the light signal charges are successively readout by means of an XY address system to derive an output video signal.
Inventors
- 👤 Tsutomu Nakamura
- 👤 Kazuya Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:33
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/196
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
110 words
A solid state image sensor comprising a plurality of image sensing elements, each image sensing element including a laterial type static induction transistor having a source and drain regions formed in a surface of a semiconductor body, and a signal readout gate means at least a part of which is formed between the source and drain regions; a light receiving gate means formed separately from the signal readout gate means and constituting a photoelectric converting region; a transfer gate means formed between the signal readout gate means and the light receiving gate means; and a light shielding film applied on the semiconductor body except for the light receiving gate means.
Claim 2
Dependent Claim
110 words
A solid state image sensor comprising a plurality of image sensing elements, each image sensing element including a laterial type static induction transistor having a source and drain regions formed in a surface of a semiconductor body, and a signal readout gate means at least a part of which is formed between the source and drain regions; a light receiving gate means formed separately from the signal readout gate means and constituting a photoelectric converting region; a transfer gate means formed between the signal readout gate means and the light receiving gate means; and a light shielding film applied on the semiconductor body except for the light receiving gate means.
Claim 3
Dependent Claim
88 words
A solid state image sensor according to claim 1, wherein said semiconductor body is formed by a semiconductor substrate of one conductivity type and a semiconductor layer of the other conductivity type and formed on the semiconductor substrate, said source and drain regions are constituted by semiconductor regions of the other conductivity type formed in the surface of semiconductor layer, and said light receiving gate means, transfer gate means and signal readout gate means comprise respective gate electrodes formed on the semiconductor layer via a gate insulating film.
Claim 4
Dependent Claim
19 words
A solid state image sensor according to claim 2, wherein said semiconductor layer is formed by an epitaxial layer.
Claim 5
Dependent Claim
210 words
A solid state image sensor comprising a plurality of image sensing elements, each comprising a lateral type static induction transistor having source and drain regions formed in a surface of a semiconductor body, and a signal readout gate means at least a part of which is formed between the source and drain regions, a light receiving gate means formed separately from the signal readout gate means and constituting a photoelectric converting region, a transfer gate means formed between the signal readout gate means and the light receiving gate means and a light shielding film applied on the semiconductor body except for the light receiving gate means; a shutter control means for controlling the light receiving gate means, transfer gate means and signal readout gate means in such a manner that during a light signal accumulation period light signal charges are stored in the light receiving gate means and at the end of the light signal accumulation period the light signal charges are transferred via the transfer gate means into the signal readout gate means and the light receiving means is reset to an initial condition; and signal readout means for reading out an output image signal in accordance with the light signal charges transferred into the signal readout gate means.
Claim 6
Dependent Claim
210 words
A solid state image sensor comprising a plurality of image sensing elements, each comprising a lateral type static induction transistor having source and drain regions formed in a surface of a semiconductor body, and a signal readout gate means at least a part of which is formed between the source and drain regions, a light receiving gate means formed separately from the signal readout gate means and constituting a photoelectric converting region, a transfer gate means formed between the signal readout gate means and the light receiving gate means and a light shielding film applied on the semiconductor body except for the light receiving gate means; a shutter control means for controlling the light receiving gate means, transfer gate means and signal readout gate means in such a manner that during a light signal accumulation period light signal charges are stored in the light receiving gate means and at the end of the light signal accumulation period the light signal charges are transferred via the transfer gate means into the signal readout gate means and the light receiving means is reset to an initial condition; and signal readout means for reading out an output image signal in accordance with the light signal charges transferred into the signal readout gate means.
Claim 7
Dependent Claim
87 words
A solid state image sensor according to claim 4, wherein said semiconductor body is formed by a semiconductor substrate of one conductivity type and a semiconductor layer of the other conductivity type formed on the semiconductor substrate, said source and drain regions are constituted by semiconductor regions of the other conductivity type formed in the surface of semiconductor layer, and said light receiving gate means, transfer gate means and signal readout gate means comprise respective gate electrodes formed on the semiconductor layer via a gate insulating film.
Claim 8
Dependent Claim
19 words
A solid state image sensor according to claim 5, wherein said semiconductor layer is formed by an expitaxial layer.
Claim 9
Dependent Claim
37 words
A solid state image sensor according to claim 5, wherein said image sensing elements are arranged in a matrix form and said signal readout means reads out the image sensing elements successively by an XY address system.
Claim 10
Dependent Claim
149 words
A solid state image sensor according to claim 7, wherein said signal readout means comprises a plurality of row lines to each of which signal readout gate electrodes of lateral type static induction transistors aligned in respective row are connected, a vertical scanning circuit connected to the row lines, a plurality of column lines to each of which drain regions of lateral type static induction transistors aglined in respective columns are connected, a video line commonly connected to the column lines via column selection transistors, and a horizontal scanning circuit connected to control electrodes of the column selection transistors, and said shutter control means comprises a shutter control circuit commonly connected to the light receiving gate electrodes via a shutter control line and to the transfer gate electrodes via a transfer control line, said shutter control circuit being connected to the vertical scanning circuit via a shutter trigger line.
Claim 11
Dependent Claim
81 words
A solid state image sensor according to claim 8, wherein said signal readout means further comprises a plurality of anti-selection transistors each of which comprises a first main electrode connected to a column line, a second main electrode and a control electrode connected to the horizontal scanning circuit via an inverter, and a ground line commonly connected to second main electrodes of the anti-selection transistors, whereby the source electrodes of all the static induction transistors are connected to the ground potential.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-12 | 1989-11-11 | 1990-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-12 | 1993-11-11 | 1994-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-12 | 1997-11-11 | 1998-05-13 | $7700.00 | Window Closed / Lapsed |