US4589026A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Image sensor
Assignee: Fujifilm Business Innovation Corp
•
Filing: 1983-08-08
•
Granted: 1986-05-13
•
Expires: 2003-08-08
Abstract
Abstract In the image sensor, thin film transistors are provided in the one-to-one correspondence to the photoelectric conversion element these thin film transistors being divided into blocks of adjoining ones whose gate electrodes are mutually connected, and the switching signal is sequentially supplied to each mutually connected gate electrodes of the same block. Further, the output electrodes of those thin film transistors located in the corresponding positions in each odd and even numbered blocks are mutually connected, and the charge transfer circuits comprising the MOS transistors are provided corresponding to respective common connection line groups of odd numbered block and even numbered block. By this construction, at the time of picking up the outputs of the photoelectric conversion elements, the switching period for the thin film transistors can be retained as long as the original reading time of a plurality of the photoelectric conversion elements corresponding to a plurality of the thin film transistors whose gate electrodes are mutually connected, and therefore the speed of outputting read signal is determined soley by the MOS transistor switching speed. In addition, the number of the connection lines required may be as small as the number of the common connection lines.
Inventors
- 👤 Takashi Ozawa
- 👤 Mutsuo Takenouchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:50
CPC Classifications
H; H04; H04N; H04N1/00; H04N1/024; H04N1/028; H04N1/03; H04N1/031; H04N1/04; H04N1/19; H04N1/191; H04N1/192; H04N1/193; H04N1/1931; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
250 words
An image sensor having photoelectric conversion element's comprising: (a) a plurality of bottom layer electrodes disposed on a substrate; (b) a photoconductive layer which is disposed on said bottom layer electrodes; (c) top layer electrode which is disposed on said photoconductive layer to form a plurality of photoelectric conversion elements; (d) a plurality of thin film transistors provided in one-to-one correspondence to said photoelectric conversion elements for switching the outputs of said photoelectric conversion elements, said thin film transistors being divided into odd and even numbered blocks of adjoining thin film transistors, each of said thin film transistors having a gate electrode, the gate electrodes of the transistors in each group of said adjoining thin film transistors in the same block being mutually connected; (e) block sequence means for sequentially supplying to the blocks switching signals coupled to the group of mutually connected gate electrodes; (f) a first connection line group having outputs and mutually connecting the output electrodes of said thin film transistors located in corresponding positions in each odd numbered block; (g) a second connection line group having outputs and mutually connecting the output electrodes of said thin film transistors located in corresponding positions in each even numbered block; (h) a first charge transfer circuit comprising MOS transistors for sequentially transferring for each block photoelectric conversion outputs from said first connection line group; and (i) a second charge transfer circuit including MOS transistors for sequentially transferring for each block photoelectric conversion outputs from said second connection line group.
Claim 2
Dependent Claim
250 words
An image sensor having photoelectric conversion element's comprising: (a) a plurality of bottom layer electrodes disposed on a substrate; (b) a photoconductive layer which is disposed on said bottom layer electrodes; (c) top layer electrode which is disposed on said photoconductive layer to form a plurality of photoelectric conversion elements; (d) a plurality of thin film transistors provided in one-to-one correspondence to said photoelectric conversion elements for switching the outputs of said photoelectric conversion elements, said thin film transistors being divided into odd and even numbered blocks of adjoining thin film transistors, each of said thin film transistors having a gate electrode, the gate electrodes of the transistors in each group of said adjoining thin film transistors in the same block being mutually connected; (e) block sequence means for sequentially supplying to the blocks switching signals coupled to the group of mutually connected gate electrodes; (f) a first connection line group having outputs and mutually connecting the output electrodes of said thin film transistors located in corresponding positions in each odd numbered block; (g) a second connection line group having outputs and mutually connecting the output electrodes of said thin film transistors located in corresponding positions in each even numbered block; (h) a first charge transfer circuit comprising MOS transistors for sequentially transferring for each block photoelectric conversion outputs from said first connection line group; and (i) a second charge transfer circuit including MOS transistors for sequentially transferring for each block photoelectric conversion outputs from said second connection line group.
Claim 3
Dependent Claim
18 words
An image sensor as defined in claim 1 wherein said top layer electrodes comprise transparent electrically conductive material.
Claim 4
Dependent Claim
24 words
An image sensor as defined in claim 1 wherein said substrate comprises transparent material and said bottom layer electrodes comprise transparent electrically conductive material.
Claim 5
Dependent Claim
21 words
An image sensor as defined in claims 1, 2 or 3 wherein said first and second charge transfer circuits are BBD.
Claim 6
Dependent Claim
21 words
An image sensor as defined in claims 1, 2 or 3 wherein said first and second charge transfer circuits are CCD.
Claim 7
Dependent Claim
34 words
An image sensor as defined in claims 1, 2 or 3 wherein connection of said first and second connection line groups with said first and second charge transfer circuits is made by wire bonding.
Claim 8
Dependent Claim
68 words
An image sensor as in claims 2 or 3 further comprising timer means for alternately causing said first charge transfer circuit to output information while said second charge transfer circuit is receiving an information output from said second connection line group, and causing said second charge transfer circuit to output information while said first charge transfer circuit is receiving an information output from said first connection line group.
References Cited (Backward Citations)
US3683193A
Cited
US4324988A
Cited
US4353084A
Cited
US4449147A
Cited
US4450464A
Cited
US4419696A
Cited
US4500927A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-12 | 1989-11-11 | 1990-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-12 | 1993-11-11 | 1994-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-12 | 1997-11-11 | 1998-05-13 | $7700.00 | Window Closed / Lapsed |