US4324988A
Expired / Lapsed
US
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Solid-state imaging device driving system
Assignee: Toshiba Corp
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Filing: 1980-07-29
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Granted: 1982-04-13
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Expires: 2000-07-29
Abstract
Abstract In a solid-state imaging device, electric charges corresponding to an image are stored in potential wells formed in the semiconductor substrate of a charge transfer device by supplying driving signals of different phases to the electrodes. The phases of the driving signals are changed in order somewhat to shift the potential wells during the charge storage period.
Inventors
- 👤 Yasuo Takemura
- 👤 Yoshitaka Katayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:38
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; H04; H04N; H04N25/00; H04N25/70; H04N25/701
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
264 words
A system for driving a solid-state imaging device such that a storage mode and a transfer mode are alternated, wherein said imaging device comprises a charge transfer device including a semiconductor substrate, an insulating film formed on said semiconductor substrate and a plurality of electrode groups, each of which includes at least first and second electrodes and forms one picture element, wherein said storage mode includes at least one integration and shifting, and in which in the storage mode a first level signal and a second level signal are supplied respectively to the first and second electrodes during a first period of time, thereby forming a first potential well in which first charges corresponding to an optical image are integrated and then applying said first and second level signals respectively to the second and first electrodes during a second period of time following the first period of time, thereby forming a second potential well to which the first charges integrated are shifted from the first potential well by at least one of the electrodes corresponding to one element and in which second charges corresponding to the optical image are integrated to be added to the first charges, and in the transfer mode high frequency pulse signals in different phases are supplied to the first and second electrodes, thereby transferring the charges integrated from the second potential well to an output circuit; wherein the first and second time periods have a substantially greater time duration than a period of said high frequency pulse signals supplied to said first and second electrodes in the transfer mode.
Claim 2
Independent Claim
264 words
A system for driving a solid-state imaging device such that a storage mode and a transfer mode are alternated, wherein said imaging device comprises a charge transfer device including a semiconductor substrate, an insulating film formed on said semiconductor substrate and a plurality of electrode groups, each of which includes at least first and second electrodes and forms one picture element, wherein said storage mode includes at least one integration and shifting, and in which in the storage mode a first level signal and a second level signal are supplied respectively to the first and second electrodes during a first period of time, thereby forming a first potential well in which first charges corresponding to an optical image are integrated and then applying said first and second level signals respectively to the second and first electrodes during a second period of time following the first period of time, thereby forming a second potential well to which the first charges integrated are shifted from the first potential well by at least one of the electrodes corresponding to one element and in which second charges corresponding to the optical image are integrated to be added to the first charges, and in the transfer mode high frequency pulse signals in different phases are supplied to the first and second electrodes, thereby transferring the charges integrated from the second potential well to an output circuit; wherein the first and second time periods have a substantially greater time duration than a period of said high frequency pulse signals supplied to said first and second electrodes in the transfer mode.
Claim 3
Independent Claim
306 words
A system for driving a solid-state imaging device such that a storage mode and a transfer mode are alternated, wherein said imaging device comprises a charge transfer device including a semiconductor substrate, an insulating film formed on said semiconductor substrate and a plurality of electrode groups, each of which includes at least first, second and third electrodes and forms one picture element, wherein said storage mode includes at least one integration and shifting, and in which in the storage mode a first level signal is supplied to the first electrode and a second level signal is supplied to the second and third electrodes during a first period of time, thereby forming a first potential well in which first charges corresponding to an optical image are integrated and then said first and second level signals are applied in a predetermined order to said first, second and third electrodes to shift said first charges to the first electrode of a neighboring picture element whereupon there is supplied to said first electrode said first level and to said second and third electrode said second level during a second period of time following the first period of time, thereby forming a second potential well to which the first charges integrated are shifted from the first potential well by at least one element and in which second charges corresponding to the optical image are integrated to be added to the first charges, and in the transfer mode high frequency pulse signals in different phases are supplied to the first, second and third electrodes, thereby transferring the charges integrated from the second potential well to an output circuit; wherein the first and second time periods have a substantially greater time duration than a period of said high frequency pulse signals supplied to said first, second and third electrodes in the transfer mode.
Claim 4
Independent Claim
306 words
A system for driving a solid-state imaging device such that a storage mode and a transfer mode are alternated, wherein said imaging device comprises a charge transfer device including a semiconductor substrate, an insulating film formed on said semiconductor substrate and a plurality of electrode groups, each of which includes at least first, second and third electrodes and forms one picture element, wherein said storage mode includes at least one integration and shifting, and in which in the storage mode a first level signal is supplied to the first electrode and a second level signal is supplied to the second and third electrodes during a first period of time, thereby forming a first potential well in which first charges corresponding to an optical image are integrated and then said first and second level signals are applied in a predetermined order to said first, second and third electrodes to shift said first charges to the first electrode of a neighboring picture element whereupon there is supplied to said first electrode said first level and to said second and third electrode said second level during a second period of time following the first period of time, thereby forming a second potential well to which the first charges integrated are shifted from the first potential well by at least one element and in which second charges corresponding to the optical image are integrated to be added to the first charges, and in the transfer mode high frequency pulse signals in different phases are supplied to the first, second and third electrodes, thereby transferring the charges integrated from the second potential well to an output circuit; wherein the first and second time periods have a substantially greater time duration than a period of said high frequency pulse signals supplied to said first, second and third electrodes in the transfer mode.
Claim 5
Dependent Claim
47 words
A system for driving a solid-state imaging device according to claim 1, wherein one picture element is formed by three electrodes including the first electrode, the second electrode and a third electrode supplied with a constant second level signal during the first and second periods of time.
Claim 6
Dependent Claim
28 words
A system for driving a solid-state imaging device according to claim 1 or 3, wherein the first period of time is equal to the second period of time.
Claim 7
Dependent Claim
28 words
A system for driving a solid-state imaging device according to claim 1 or 3, wherein the first period of time is shorter than the second period of time.
Claim 8
Dependent Claim
142 words
A system for driving a solid-state imaging device according to claim 1, wherein one picture element is formed by three electrodes including the first electrode, the second electrode and a third electrode and the storage mode is performed during the first and second periods of time as well as during a third period of time, and during the first period of time the first electrode is supplied with the first level signal while the second and third electrodes with the second level signal, during the second period of time the first and third electrodes are supplied with the second level signal while the second electrode is supplied with the first level signal, and during the third period of time the first and second electrodes are supplied with the second level signal while the third electrode is supplied with the first level signal.
Claim 9
Independent Claim
33 words
A system for driving a solid-state imaging device according to any one of preceding claims 1, 3, 2 or 6, wherein said charge transfer device is formed of a one-dimensional charge coupled device.
Claim 10
Independent Claim
32 words
A system for driving a solid-state imaging device according to any one of claims 1, 3, 2 or 6, wherein said charge transfer device is formed of a two-dimensional charge coupled device.
Claim 11
Dependent Claim
25 words
A system for driving a solid-state imaging device according to claim 4, wherein said charge transfer device is formed of a one-dimensional charge coupled device.
Claim 12
Dependent Claim
25 words
A system for driving a solid-state imaging device according to claim 5, wherein said charge transfer device is formed of a one-dimensional charge coupled device.
Claim 13
Dependent Claim
25 words
A system for driving a solid-state imaging device according to claim 4, wherein said charge transfer device is formed of a two-dimensional charge coupled device.
Claim 14
Dependent Claim
25 words
A system for driving a solid-state imaging device according to claim 5, wherein said charge transfer device is formed of a two-dimensional charge coupled device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-04-12 | 1985-10-12 | 1986-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-04-12 | 1989-10-12 | 1990-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-04-12 | 1993-10-12 | 1994-04-13 | $7700.00 | Window Closed / Lapsed |