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US4589003A
Expired / Lapsed
US
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Solid state image sensor comprising photoelectric converting film and reading-out transistor
Assignee: Olympus Corp
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Filing: 1983-11-29
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Granted: 1986-05-13
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Expires: 2003-11-29
Abstract
Abstract A solid state image sensor including a substrate, an epitaxial layer grown on the substrate, an opaque bottom electrode applied on the epitaxial layer, a photoconductor film deposited on the bottom electrode, a transparent surface electrode applied on the photoconductor film, a reading-out SIT formed in the epitaxial layer and a resetting MOS-FET also formed in the epitaxial layer. A gate diffusion region of the reading-out SIT is connected to the bottom electrode and a source region of resetting MOS-FET is also connected to the bottom electrode. A source electrode connected to the source region of the reading-out SIT is extended under the bottom surface, while an insulating layer is interposed therebetween to form a capacitance. Charge carriers stored in the gate region of the reading-out SIT can be read-out to derive a large output voltage due to the amplifying function of the reading-out SIT.
Inventors
- 👤 Hidetoshi Yamada
- 👤 Atsushi Yusa
- 👤 Takashi Mizusaki
- 👤 Jun-ichi Nishizawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 15:40
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/196; H04; H04N; H04N25/00; H10F39/191
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
203 words
A solid state image sensor for sensing radiation incident thereon in a first direction generally perpendicular thereto and producing an output level corresponding to the intensity of the incident radiation, comprising: a semiconductor body having a main surface generally perpendicular to said first direction; a bottom electrode layer, opaque to said incident radiation, applied on and overlying the main surface of said semiconductor body; a photoelectric converting film layer applied on and overlying said bottom electrode layer; a surface electrode layer, transparent to said incident radiation, applied on and overlying said photoelectric converting film layer; a read-out transistor including drain, gate, and source regions provided in said semiconductor body, said gate region being in ohmic contact with said bottom electrode layer, said read-out transistor being arranged to conduct a source-drain current thereof in said first direction perpendicular to the main surface of said semiconductor body, with one of said source and drain regions providing said output level corresponding to an amplified version of the voltage produced on said bottom electrode layer by the radiation incident on said photoelectric converting film layer; and means provided in said semiconductor body for periodically resetting said gate region of said read-out transistor to a predetermined reference potential.
Claim 2
Dependent Claim
203 words
A solid state image sensor for sensing radiation incident thereon in a first direction generally perpendicular thereto and producing an output level corresponding to the intensity of the incident radiation, comprising: a semiconductor body having a main surface generally perpendicular to said first direction; a bottom electrode layer, opaque to said incident radiation, applied on and overlying the main surface of said semiconductor body; a photoelectric converting film layer applied on and overlying said bottom electrode layer; a surface electrode layer, transparent to said incident radiation, applied on and overlying said photoelectric converting film layer; a read-out transistor including drain, gate, and source regions provided in said semiconductor body, said gate region being in ohmic contact with said bottom electrode layer, said read-out transistor being arranged to conduct a source-drain current thereof in said first direction perpendicular to the main surface of said semiconductor body, with one of said source and drain regions providing said output level corresponding to an amplified version of the voltage produced on said bottom electrode layer by the radiation incident on said photoelectric converting film layer; and means provided in said semiconductor body for periodically resetting said gate region of said read-out transistor to a predetermined reference potential.
Claim 3
Dependent Claim
35 words
A solid state image sensor according to claim 1, wherein said read-out transistor comprises a static induction transistor having a gate region connected to the bottom electrode layer, a source region and a drain region.
Claim 4
Dependent Claim
33 words
A solid state image sensor according to claim 2, wherein said resetting means comprises a MOS-FET having a source region connected to the bottom electrode layer, a drain region and a gate region.
Claim 5
Dependent Claim
49 words
A solid state image sensor according to claim 3, wherein said semiconductor body comprises a substrate of one conductivity type and an epitaxial layer of a second complementary conductivity type deposited on said substrate, and said drain region of said MOS-FET extends through said epitaxial layer to said substrate.
Claim 6
Dependent Claim
45 words
A solid state image sensor according to claim 2, further comprising a source electrode connected to said source region of said static inducation transistor, said source electrode being extended under, parallel to, and spaced from said bottom electrode, with an insulating layer being interposed therebetween.
Claim 7
Dependent Claim
33 words
A solid state image sensor according to claim 1, wherein said read-out transistor comprises a J-FET having a gate region connected to said bottom electrode layer, a source region and a drain region.
Claim 8
Dependent Claim
46 words
A solid state image sensor according to claim 6, wherein said resetting means comprises a reset transistor having a reset gate region connected to said bottom electrode layer and a reset gate electrode provided above said reset gate region, with an insulating layer being interposed therebetween.
Claim 9
Dependent Claim
53 words
A solid state image sensor according to claim 7, wherein said gate region of said read-out J-FET is formed by a region buried below the main surface of said body and wherein said reset gate region of said resetting means is formed by a region on the main surface of said semiconductor body.
Claim 10
Dependent Claim
65 words
A solid state image sensor according to claim 8, wherein said semiconductor body comprises a substrate of a first conductivity type and an epitaxial layer of a second conductivity type deposited on said substrate and having a boundary between said substrate and said epitaxial layer, said buried gate region of the read-out J-FET being situated at said boundary between said substrate and said epitaxial layer.
Claim 11
Dependent Claim
28 words
A solid state image sensor according to claim 9, comprising a further buried region of said first conductivity type situated between said buried gate region and said substrate.
Claim 12
Dependent Claim
19 words
A solid state image sensor according to claim 1, wherein said photoelectric converting film is made of photoconductive material.
Claim 13
Dependent Claim
20 words
A solid state image sensor according to claim 1, wherein said photoelectric converting film is made of amorphous semiconductor material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-12 | 1989-11-11 | 1990-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-12 | 1993-11-11 | 1994-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-12 | 1997-11-11 | 1998-05-13 | $7700.00 | Window Closed / Lapsed |