Patent US4588960A successfully refreshed from Google Patents.
US4588960A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Output circuits of class B type electronic amplifiers
Assignee: University of Toronto Innovations Foundation
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Filing: 1984-08-03
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Granted: 1986-05-13
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Expires: 2004-08-03
Abstract
Abstract The invention provides a class B output stage for an amplifier, more specifically an integrated circuit amplifier for low power, low voltage application, such as a hearing aid amplifier, that is of class B type with consequent negligible quiescent power dissipation, but which avoids the input voltage deadband of conventional class B stages that results in cross-over distortion. The stage uses a bipolar transistor and a field transistor connected in series. The field effect transistor has a gate-source pinch-off voltage that is approximately equal to the base-emitter voltage of the bipolar transistor, so that they are alternately "on" as the input voltage swings over its full value. In a preferred embodiment the bipolar transistor is an npn type while the field effect transistor is a bipolar compatible p-channel junction field effect transistor (JFET) with pinch-off voltage as close as possible but just less than the base emitter voltage of the bipolar transistor. The circuit is preferable realized in integrated circuit form.
Inventors
- 👤 Clement A. Salama
- 👤 Satwinder D. Malhi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:07
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/30; H03F3/3001; H03F3/3044; H03F1/00; H03F1/32; H03F1/3217; H04; H04R; H04R2460/00; H04R2460/03; H04R25/00
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
143 words
In an output stage for use with an amplifier biased to operate in a class B mode, the output stage being connected between means to drive the output stage and a load, the improvement comprising a bipolar transistor operative to have a base-emitter voltage drop of a first value, a field effect transistor operative to have a gate-source pinch-off voltage drop of a second value, the base of the bipolar transistor being coupled to the gate of the field effect transistor and the emitter of the bipolar transistor being coupled to the source of the field effect transistor, the value of the base-emitter voltage drop of the bipolar transistor and the value of the gate-source pinch-off voltage drop of the field effect transistor being selected to be substantially equal to minimise the deadband voltage in the voltage transfer characteristics of the output stage.
Claim 2
Dependent Claim
143 words
In an output stage for use with an amplifier biased to operate in a class B mode, the output stage being connected between means to drive the output stage and a load, the improvement comprising a bipolar transistor operative to have a base-emitter voltage drop of a first value, a field effect transistor operative to have a gate-source pinch-off voltage drop of a second value, the base of the bipolar transistor being coupled to the gate of the field effect transistor and the emitter of the bipolar transistor being coupled to the source of the field effect transistor, the value of the base-emitter voltage drop of the bipolar transistor and the value of the gate-source pinch-off voltage drop of the field effect transistor being selected to be substantially equal to minimise the deadband voltage in the voltage transfer characteristics of the output stage.
Claim 3
Dependent Claim
28 words
An output stage as claimed in claim 1 wherein the bipolar transistor is an npn transistor and the field effect transistor is a p-channel junction field effect transistor.
Claim 4
Dependent Claim
31 words
An output stage as claimed in claim 2 wherein the magnitude of the gate-source pinch-off voltage drop is selected to be just less than the magnitude of the base-emitter voltage drop.
Claim 5
Dependent Claim
28 words
An output stage as claimed in claim 1 wherein the bipolar transistor is a pnp transistor and the field effect transistor is an n-channel junction field effect transistor.
Claim 6
Dependent Claim
28 words
An output stage as claimed in claim 4 wherein the magnitude of the gate-source pinch-off voltage drop is just less than the magnitude of the base-emitter voltage drop.
Claim 7
Dependent Claim
19 words
An output stage as claimed in claim 1 which is part of an amplifier implemented in an integrated circuit.
Claim 8
Dependent Claim
158 words
An output amplifier adapted to be biased to operate in a class B mode, the amplifier comprising an output stage having an input and an output, means coupled to the input of output stage for feeding a signal to the output stage, load means connected to the output stage, the output stage having a bipolar transistor having a base-emitter voltage drop of a first value and a field effect transistor having a gate-source pinch-off voltage drop of a second value, the base of the bipolar transistor being coupled to the gate of the field effect transistor and the emitter of the bipolar transistor being coupled to the source of the field effect transistor, the value of the base-emitter voltage drop of the bipolar transistors and the value of the gate-source pinch-off voltage drop of the field effect transistor being selected to be substantially equal to minimise the deadband voltage in the voltage transfer characteristics of the output stage.
Claim 9
Dependent Claim
158 words
An output amplifier adapted to be biased to operate in a class B mode, the amplifier comprising an output stage having an input and an output, means coupled to the input of output stage for feeding a signal to the output stage, load means connected to the output stage, the output stage having a bipolar transistor having a base-emitter voltage drop of a first value and a field effect transistor having a gate-source pinch-off voltage drop of a second value, the base of the bipolar transistor being coupled to the gate of the field effect transistor and the emitter of the bipolar transistor being coupled to the source of the field effect transistor, the value of the base-emitter voltage drop of the bipolar transistors and the value of the gate-source pinch-off voltage drop of the field effect transistor being selected to be substantially equal to minimise the deadband voltage in the voltage transfer characteristics of the output stage.
References Cited (Backward Citations)
SU660196A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-12 | 1989-11-11 | 1990-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-12 | 1993-11-11 | 1994-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-12 | 1997-11-11 | 1998-05-13 | $7700.00 | Window Closed / Lapsed |