US4584079A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Step shape tailoring by phase angle variation RF bias sputtering
Assignee: Atmel Corp
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Filing: 1983-10-11
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Granted: 1986-04-22
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Expires: 2003-10-11
Abstract
Abstract Disclosed is a method for tailoring the shape of a dielectric layer covering a step in a semiconductor device. The method comprises placing a semiconductor device comprising the step into a low pressure ionization chamber comprising a target electrode and a substrate electrode; connecting a sample of the dielectric to the target electrode; placing the semiconductor device comprising the step onto the substrate electrode; powering the target electrode and the substrate electrode with a radio frequency power having an electrical phase angle between the substrate electrode and the target electrode; and adjusting the electrical phase angle to obtain the desired shape of the dielectric layer covering the step.
Inventors
- 👤 Eddie C. Lee
- 👤 William H. Nunne
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:20
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/262; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3435; C23C14/345; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32137; H01J37/32155; H01J37/32165; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10W20/098
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
102 words
A method for tailoring the shape of a dielectric layer covering a step in a semiconductor device, comprising: placing the semiconductor device comprising the step into a low pressure ionization chamber comprising a target electrode and a substrate electrode; connecting a sample of the dielectric to the target electrode; placing the semiconductor device comprising the step onto the substrate electrode; powering the target electrode and the substrate electrode with radio frequency power having a phase angle between the substrate electrode and the target electrode; and adjusting the phase angle to obtain the desired non-planar shape of the dielectric layer covering the step.
Claim 2
Independent Claim
102 words
A method for tailoring the shape of a dielectric layer covering a step in a semiconductor device, comprising: placing the semiconductor device comprising the step into a low pressure ionization chamber comprising a target electrode and a substrate electrode; connecting a sample of the dielectric to the target electrode; placing the semiconductor device comprising the step onto the substrate electrode; powering the target electrode and the substrate electrode with radio frequency power having a phase angle between the substrate electrode and the target electrode; and adjusting the phase angle to obtain the desired non-planar shape of the dielectric layer covering the step.
Claim 3
Independent Claim
101 words
A method for tailoring the shape of a dielectric layer covering a step in a semiconductor device, comprising: placing the semiconductor device comprising the step into a low pressure ionization chamber comprising a target electrode, and a substrate electrode the target electrode comprising a sample of the dielectric, the semiconductor device comprising the step being placed onto the substrate electrode; powering the target electrode and the substrate electrode with radio frequency power having a phase angle between the substrate electrode and the target electrode; and adjusting the phase angle to obtain the desired shape of the dielectric layer covering the step.
Claim 4
Independent Claim
101 words
A method for tailoring the shape of a dielectric layer covering a step in a semiconductor device, comprising: placing the semiconductor device comprising the step into a low pressure ionization chamber comprising a target electrode, and a substrate electrode the target electrode comprising a sample of the dielectric, the semiconductor device comprising the step being placed onto the substrate electrode; powering the target electrode and the substrate electrode with radio frequency power having a phase angle between the substrate electrode and the target electrode; and adjusting the phase angle to obtain the desired shape of the dielectric layer covering the step.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-21 | 1989-10-21 | 1990-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-21 | 1993-10-21 | 1994-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-21 | 1997-10-21 | 1998-04-22 | $7700.00 | Window Closed / Lapsed |