Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
149 words
A microminiature valve comprising: a semiconductor substrate having an inlet aperture for receiving a pressurized fluid, an outlet aperture and a raised valve seat protruding from the top surface of said substrate and circumscribing said inlet aperture; an integral semiconductor intermedate layer grown on the top surface of said substrate having a thickness greater than the height of said raised valve seat, said intermediate layer having a preferentially etched away central portion and circumscribing said inlet and outlet apertures; a semiconductor oxide flexible diaphragm integrally grown on said intermediate layer and peripherally supported therefrom, the unsupported portion of said flexible diaphragm in cooperation with said substrate and said intermediate layer forming an enclosed chamber connecting said inlet and outlet apertures; and a metal electrode provided in the external surface of said flexible diaphragm for receiving an electrical charge to electrostatically deflect said flexible diaphragm to engage said valve seat.
Claim 2
Dependent Claim
149 words
A microminiature valve comprising: a semiconductor substrate having an inlet aperture for receiving a pressurized fluid, an outlet aperture and a raised valve seat protruding from the top surface of said substrate and circumscribing said inlet aperture; an integral semiconductor intermedate layer grown on the top surface of said substrate having a thickness greater than the height of said raised valve seat, said intermediate layer having a preferentially etched away central portion and circumscribing said inlet and outlet apertures; a semiconductor oxide flexible diaphragm integrally grown on said intermediate layer and peripherally supported therefrom, the unsupported portion of said flexible diaphragm in cooperation with said substrate and said intermediate layer forming an enclosed chamber connecting said inlet and outlet apertures; and a metal electrode provided in the external surface of said flexible diaphragm for receiving an electrical charge to electrostatically deflect said flexible diaphragm to engage said valve seat.
Claim 3
Dependent Claim
15 words
The microminiature valve of claim 1 wherein said flexible diaphragm is approximately 10 micrometers thick.
Claim 4
Dependent Claim
47 words
The microminiature valve of claim 1 wherein said semiconductor substrate is a p type silicon substrate, said intermediate layer is an n+ type silicon layer grown on the surface of said p type substrate and said flexible diaphragm is a silicon dioxide layer approximately 10 micrometers thick.
Claim 5
Dependent Claim
111 words
A microminiature valve having an integral multilayer structure comprising: a p type silicon substrate having an inlet port and an outlet port provided therethrough and a raised valve seat circumscribing said inlet port; an intermediate n type silicon layer grown on a substrate surface, said intermediate layer forming an annular spacer circumscribing said inlet and outlet ports; a silicon dioxide layer grown on said intermediate layer to form a flexible diaphragm enclosing the volume defined by said substrate and said annular spacer; and a metal electrode diposed on the external surface of said flexible diaphragm for receiving an electrical potential to electrostatically deflect said flexible diaphragm to engage said valve seat.
Claim 6
Dependent Claim
111 words
A microminiature valve having an integral multilayer structure comprising: a p type silicon substrate having an inlet port and an outlet port provided therethrough and a raised valve seat circumscribing said inlet port; an intermediate n type silicon layer grown on a substrate surface, said intermediate layer forming an annular spacer circumscribing said inlet and outlet ports; a silicon dioxide layer grown on said intermediate layer to form a flexible diaphragm enclosing the volume defined by said substrate and said annular spacer; and a metal electrode diposed on the external surface of said flexible diaphragm for receiving an electrical potential to electrostatically deflect said flexible diaphragm to engage said valve seat.
Claim 7
Dependent Claim
23 words
The microminiature valve of claim 4 wherein the height of said intermediate layer is greater than the height of said raised valve seat.
Claim 8
Dependent Claim
15 words
The microminiature valve of claim 5 wherein said flexible diaphragm is approximately 10 micrometers thick.