Internally matched Schottky barrier beam lead diode

Claim 2

A gallium arsenide millimeter-wave internally matched Schottky barrier beam lead diode comprising: a beam lead Schottky diode structure fabricated on a chip having a Schottky contact beam lead portion and an ohmic beam lead portion, said Schottky diode at said millimeter wave frequencies exhibiting unwanted but inherent parasitic reactance and lead inductive reactance; and, a matching reactive shunt path comprising in series an inductor and a capacitor fabricated on said chip adjacent said Schottky diode structure and coupled from said ohmic beam lead to said Schottky contact beam lead.

Claim 3

The structure according to claim 1 in which said inductor is fabricated on the same surface as said beam lead portions.

Claim 4

The structure according to claim 1 in which said chip comprises a semi-insulating gallium arsenide substrate having thereon an epitaxial gallium arsenide layer, which layer has a conductive region and also a surrounding non-conductive region.

Claim 5

The structure according to claim 1 in which a region of one of said beam leads also forms part of said capacitor structure.

Claim 6

The structure according to claim 1 in which one end of the inductor is connected to said ohmic beam lead and the other end is coupled to said Schottky control beam lead by said capacitor.

Claim 7

The structure according to claim 3 in which said Schottky barrier diode is fabricated at said conductive region.

Claim 8

A gallium arsenide millimeter-wave internally matched Schottky barrier beam-lead diode comprising: a semi-insulating gallium arsenide substrate; an epitaxial gallium arsenide layer deposited on a surface of said substrate, said layer as deposited having a conductive state, said layer having a second region thereof which has been converted to a semi-insulating state so that a first region is conductive and the second region is non-conductive; an ohmic contact and a Schottky contact on the surface of the first conductive region; a conductive pad forming a lower capacitor plate on the surface of said non-conductive second region; a passivation dielectric layer over said epitaxial layer, contacts and pad, said dielectric layer having vias therethrough for electrical connection from said contacts and pad to the upper surface of said dielectric layer; a pair of beam lead means on the surface of said dielectric layer comprising a Schottky contact beam lead and a ohmic contact beam lead, one of said beam lead means having a region overlying said pad and forming the upper capacitor plate, said lower and upper capacitor plates and the intervening dielectric layer forming a capacitor; and, a matching reactive shunt path comprising in series said capacitor and an inductor fabricated on said dielectric layer adjacent said Schottky diode structure and coupled from said ohmic beam lead to said Schottky contact beam lead.

Claim 9

A gallium arsenide millimeter-wave internally matched Schottky barrier beam-lead diode comprising: a semi-insulating gallium arsenide substrate; an epitaxial gallium arsenide layer deposited on a surface of said substrate, said layer as deposited having a conductive state, said layer having a second region thereof which has been converted to a semi-insulating state so that a first region is conductive and the second region is non-conductive; an ohmic contact and a Schottky contact on the surface of the first conductive region; a conductive pad forming a lower capacitor plate on the surface of said non-conductive second region; a passivation dielectric layer over said epitaxial layer, contacts and pad, said dielectric layer having vias therethrough for electrical connection from said contacts and pad to the upper surface of said dielectric layer; a pair of beam lead means on the surface of said dielectric layer comprising a Schottky contact beam lead and a ohmic contact beam lead, one of said beam lead means having a region overlying said pad and forming the upper capacitor plate, said lower and upper capacitor plates and the intervening dielectric layer forming a capacitor; and, a matching reactive shunt path comprising in series said capacitor and an inductor fabricated on said dielectric layer adjacent said Schottky diode structure and coupled from said ohmic beam lead to said Schottky contact beam lead.

Claim 10

The structure according to claim 7 in which said non-conductive second region of said epitaxial layer is proton or deuteron implant converted.

Claim 11

The structure according to claim 7 in which said beam leads and said inductor are plated over the dielectric layer surface.