US4576697A
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Synthesis of carbon-containing intercalatable layered transition metal chalocogenides
Assignee: Combustion Engineering Inc
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Filing: 1983-04-21
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Granted: 1986-03-18
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Expires: 2003-04-21
Abstract
Abstract Carbon-containing intercalatable layered or lamellar transition metal chalcogenides having the general formula M n X 2 C where M is a transition metal selected from the group consisting of Ti, V, Cr, Fe, Zr and Ta; X is sulfur; and n is 1-2; such as TiS 2 C or Ti 2 S 2 C, usable as cathode active materials in alkali metal nonaqueous secondary batteries that can undergo alkali metal intercalation, are synthesized by ion implanting a substrate of the transition metal with sulfur and then carbon at implantation energies in the range of about 150-200 kiloelectron volts and at saturation dosages of 1×10 12 to 1×10 19 sulfur and carbon atoms/cm 2 .
Inventors
- 👤 David N. Palmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:06
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/48; H; H01; H01M; H01M4/00; H01M4/02; H01M4/36; H01M4/58; H01M4/581; Y; Y02; Y02E; Y02E60/00; Y02E60/10
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
147 words
A process for treating the surface of a transition metal substrate to form into the surface a carbon-containing intercalatable layered transition metal chalcogenide having the general formula M n X 2 C where M is a transition metal selected from the group consisting of Ti, V, Cr, Fe, Zr and Ta; X is sulfur; and n is 1-2; which comprises: ion implanting sulfur at an implantation energy in the range of about 150-200 kiloelectron volts and at a saturation dosage of about 10 18 sulfur atoms/cm 2 into the surface of the transition metal substrate to a depth of about 1000-2200 Å; and then ion implanting carbon at an implantation energy in the range of about 150-200 kiloelectron volts and at a saturation dosage of about 10 18 carbon atoms/cm 2 into the surface of the sulfur-implanted transition metal substrate to a depth of about 1000-2200 Å.
Claim 2
Dependent Claim
147 words
A process for treating the surface of a transition metal substrate to form into the surface a carbon-containing intercalatable layered transition metal chalcogenide having the general formula M n X 2 C where M is a transition metal selected from the group consisting of Ti, V, Cr, Fe, Zr and Ta; X is sulfur; and n is 1-2; which comprises: ion implanting sulfur at an implantation energy in the range of about 150-200 kiloelectron volts and at a saturation dosage of about 10 18 sulfur atoms/cm 2 into the surface of the transition metal substrate to a depth of about 1000-2200 Å; and then ion implanting carbon at an implantation energy in the range of about 150-200 kiloelectron volts and at a saturation dosage of about 10 18 carbon atoms/cm 2 into the surface of the sulfur-implanted transition metal substrate to a depth of about 1000-2200 Å.
Claim 3
Dependent Claim
17 words
A process according to claim 1 wherein M is Ti, X is S and n is 1.
Claim 4
Dependent Claim
17 words
A process according to claim 1 wherein M is Ti, X is S and n is 2.
Claim 5
Dependent Claim
49 words
A process according to claim 1 wherein the ion-implanted transition metal substrate is annealed under a vacuum of from about 1×10 -4 torr to about 1×10 -6 torr at a temperature of from about 200° C. to about 500° C. for from about 24 hours to about 48 hours.
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