US4575402A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating conductors in integrated circuits
Assignee: HP Inc
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Filing: 1985-02-13
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Granted: 1986-03-11
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Expires: 2005-02-13
Abstract
Abstract A technique of patterning a conductive layer for interconnections in integrated circuits is disclosed. The technique enables fine line conductors to be fabricated. In accordance with the invention, a pattern for the conductors is etched into the surface of a substrate through the use of a patterned photoresist layer. The conductive layer is then deposited over the photoresist layer and into the pattern etched into the substrate surface. In intervening steps, only the portions of the conductive layer outside the depression of the pattern in the surface are removed; the portions of the conductive layer within the depression remains intact to provide the pattern of fine line conductors desired.
Inventors
- 👤 Paul J. Marcoux
- 👤 Eileen M. Murray
- 👤 Hugh R. Grinolds
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:16
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10P; H10P76/00; H10P76/20; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/951
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
172 words
A process for selectively patterning a layer on a surface comprising the steps of: depositing an initial layer onto the surface; removing portions of the initial layer to form a select pattern on the initial layer; transferring the select pattern onto the surface by forming a depression of the pattern in the surface to result in a nonplanar surface; depositing a first layer to be patterned onto the patterned initial layer such that the first layer partially fills the depression on the nonplanar surface; depositing a second layer of planarizing material onto the first layer to form a substantially planar surface and completely filling the depression to form a substantially planar surface; uniformly removing the second layer until the uppermost portions of the first layer is exposed, leaving remnants of the second layer in the depression to protect those portions of the first layer in the depression; removing portions of the exposed first layer; and removing remnants of the second layer and the initial layer to provide a selectively patterned first layer.
Claim 2
Dependent Claim
172 words
A process for selectively patterning a layer on a surface comprising the steps of: depositing an initial layer onto the surface; removing portions of the initial layer to form a select pattern on the initial layer; transferring the select pattern onto the surface by forming a depression of the pattern in the surface to result in a nonplanar surface; depositing a first layer to be patterned onto the patterned initial layer such that the first layer partially fills the depression on the nonplanar surface; depositing a second layer of planarizing material onto the first layer to form a substantially planar surface and completely filling the depression to form a substantially planar surface; uniformly removing the second layer until the uppermost portions of the first layer is exposed, leaving remnants of the second layer in the depression to protect those portions of the first layer in the depression; removing portions of the exposed first layer; and removing remnants of the second layer and the initial layer to provide a selectively patterned first layer.
Claim 3
Dependent Claim
39 words
The process as in claim 1, wherein the step of depositing an initial layer comprises depositing a layer of photoresist and the step of transferring comprises etching the pattern onto the surface to form the depression in the surface.
Claim 4
Dependent Claim
21 words
The process as in claim 2, wherein the step of depositing a first layer comprises depositing a layer of conductive material.
Claim 5
Dependent Claim
21 words
The process as in claim 3, wherein the step of depositing a second layer comprises depositing a layer of resist material.
Claim 6
Dependent Claim
21 words
The process as in claim 4, wherein the step of uniformly removing the second layer comprises plasma etching the second layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-03-10 | 1989-09-09 | 1990-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-03-10 | 1993-09-09 | 1994-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-03-10 | 1997-09-09 | 1998-03-11 | $7700.00 | Window Closed / Lapsed |