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US4572881A Expired / Lapsed US ⏱️ 0.0 years remaining

Printing member for electrostatic photocopying

Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1984-04-24
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Granted: 1986-02-25
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Expires: 2004-04-24
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Abstract

Abstract A printing member for electrostatic photocopying, comprises a substrate having a conductive surface and a photoelectric-sensitive, electrically chargeable layer deposited on the conductive surface of the substrate. The electrically chargeable layer has a non-single crystal semiconductor layer having a built-in-potential, or the non-single crystal semiconductor layer and an insulating or semi-insulating layer.

Inventors

  • 👤 Shunpei Yamazaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 08:19
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08235; G03G5/0825

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 224 words
A printing member for electrostatic photocopying comprising: a substrate having a conductive surface; a photoelectrically-sensitive, electrically chargeable layer on the conductive surface of the substrate; wherein the photoelectrically-sensitive, electrically chargeable layer has a photoelectrically-sensitive non-single crystal semiconductor layer on the substrate, a charge storing non-single crystal semiconductor layer on the photoelectrically-sensitive non-single crystal semiconductor layer and a chargeable layer formed on the charge storing non-single crystal semiconductor layer and permeable to light and electrical carriers and wherein the charge storing non-single crystal semiconductor layer has a smaller energy band gap than the chargeable layer and the region of the photoelectrically-sensitive non-single crystal semicondutor layer on the side of the charge storing non-single crystal semiconductor layer; wherein the non-single crystal semiconductor layer has a first layer on the substrate and a second layer on the first layer to create a transition region; wherein each of said first, second, and charge storing layers is formed principally from material selected from the group consisting of Si, Si 3 N 4-x (0<x<4), SiC 1-x (0<x<1), or SiO 2-x (0<x<2) and contains material selected from the group consisting of hydrogen, chlorine, or fluorine; and wherein the first layer is P or N type and the second layer is I type, and the transition region is PI of NI depending on whether the first region is P or N type.
Claim 2
Dependent Claim 224 words
A printing member for electrostatic photocopying comprising: a substrate having a conductive surface; a photoelectrically-sensitive, electrically chargeable layer on the conductive surface of the substrate; wherein the photoelectrically-sensitive, electrically chargeable layer has a photoelectrically-sensitive non-single crystal semiconductor layer on the substrate, a charge storing non-single crystal semiconductor layer on the photoelectrically-sensitive non-single crystal semiconductor layer and a chargeable layer formed on the charge storing non-single crystal semiconductor layer and permeable to light and electrical carriers and wherein the charge storing non-single crystal semiconductor layer has a smaller energy band gap than the chargeable layer and the region of the photoelectrically-sensitive non-single crystal semicondutor layer on the side of the charge storing non-single crystal semiconductor layer; wherein the non-single crystal semiconductor layer has a first layer on the substrate and a second layer on the first layer to create a transition region; wherein each of said first, second, and charge storing layers is formed principally from material selected from the group consisting of Si, Si 3 N 4-x (0<x<4), SiC 1-x (0<x<1), or SiO 2-x (0<x<2) and contains material selected from the group consisting of hydrogen, chlorine, or fluorine; and wherein the first layer is P or N type and the second layer is I type, and the transition region is PI of NI depending on whether the first region is P or N type.
Claim 3
Dependent Claim 31 words
A printing member according to claim 1 wherein the chargeable layer is formed principally from material selected from the group consisting of Si 3 N 4-x (0≦X<4) or SiC 1-x (0≦x<1).
Claim 4
Dependent Claim 19 words
A printing member according to claim 1 wherein the charge storing non-single crystal semiconductor layer is formed of Si.
Claim 5
Dependent Claim 28 words
A printing member according to claim 1 wherein the charge storing non-single crystal semiconductor layer is an assembly of semiconductor grains or clusters electrically isolated from one another.
Claim 6
Dependent Claim 23 words
A printing member according to claim 4 wherein the semiconductor grains or clusters each have a diameter of from 50 Å to 2μ.
Claim 7
Dependent Claim 23 words
A printing member according to claim 1 wherein the charge storing non-single crystal semiconductor layer has a thichness from 50 Å to 5μ.
Claim 8
Dependent Claim 30 words
A printing member according to claim 1 wherein the chargeable insulating or semi-insulating layer is formed of Si 3 N 4 and has a thickness from 30 to 100 Å.
Claim 9
Dependent Claim 31 words
A printing member according to claim 1 wherein the chargeable insulating or semi-insulating layer is formed of Si 3 N 4-x (0<x<4) and has a thickness from 50 to 500 Å.
Claim 10
Dependent Claim 47 words
A printing member according to claim 1 wherein the transition from the energy band gap of said second layer to the energy hand gap of said region of the photoelectrically-sensitive non-single crystal semiconductor layer on the side of the charge storing non-single crystal semiconductor layer is continuous.
Claim 11
Dependent Claim 42 words
A printing member as in claim 1 where said first layer is of the P type use the energy difference between the valence band and the Fermi level is greater at the second, I type than at the first, P type later.
Claim 12
Dependent Claim 41 words
A printing member as in claim 1 where the first layer is N type and the energy difference between the conduction band and the Fermi level is greater at the second, I type layer than at the first, N type layer.

References Cited (Backward Citations)

US3801317A Cited
US3650737A Cited
US3704121A Cited
DE2056013A1 Cited
DE2128584A1 Cited
JPS5529154A Cited
JPS5625743A Cited
JPS5664347A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-02-24 1989-08-26 1990-02-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-02-24 1993-08-26 1994-02-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-02-24 1997-08-26 1998-02-25 $7700.00 Window Closed / Lapsed

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