US4572881A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Printing member for electrostatic photocopying
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1984-04-24
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Granted: 1986-02-25
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Expires: 2004-04-24
Abstract
Abstract A printing member for electrostatic photocopying, comprises a substrate having a conductive surface and a photoelectric-sensitive, electrically chargeable layer deposited on the conductive surface of the substrate. The electrically chargeable layer has a non-single crystal semiconductor layer having a built-in-potential, or the non-single crystal semiconductor layer and an insulating or semi-insulating layer.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:19
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08235; G03G5/0825
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
224 words
A printing member for electrostatic photocopying comprising: a substrate having a conductive surface; a photoelectrically-sensitive, electrically chargeable layer on the conductive surface of the substrate; wherein the photoelectrically-sensitive, electrically chargeable layer has a photoelectrically-sensitive non-single crystal semiconductor layer on the substrate, a charge storing non-single crystal semiconductor layer on the photoelectrically-sensitive non-single crystal semiconductor layer and a chargeable layer formed on the charge storing non-single crystal semiconductor layer and permeable to light and electrical carriers and wherein the charge storing non-single crystal semiconductor layer has a smaller energy band gap than the chargeable layer and the region of the photoelectrically-sensitive non-single crystal semicondutor layer on the side of the charge storing non-single crystal semiconductor layer; wherein the non-single crystal semiconductor layer has a first layer on the substrate and a second layer on the first layer to create a transition region; wherein each of said first, second, and charge storing layers is formed principally from material selected from the group consisting of Si, Si 3 N 4-x (0<x<4), SiC 1-x (0<x<1), or SiO 2-x (0<x<2) and contains material selected from the group consisting of hydrogen, chlorine, or fluorine; and wherein the first layer is P or N type and the second layer is I type, and the transition region is PI of NI depending on whether the first region is P or N type.
Claim 2
Dependent Claim
224 words
A printing member for electrostatic photocopying comprising: a substrate having a conductive surface; a photoelectrically-sensitive, electrically chargeable layer on the conductive surface of the substrate; wherein the photoelectrically-sensitive, electrically chargeable layer has a photoelectrically-sensitive non-single crystal semiconductor layer on the substrate, a charge storing non-single crystal semiconductor layer on the photoelectrically-sensitive non-single crystal semiconductor layer and a chargeable layer formed on the charge storing non-single crystal semiconductor layer and permeable to light and electrical carriers and wherein the charge storing non-single crystal semiconductor layer has a smaller energy band gap than the chargeable layer and the region of the photoelectrically-sensitive non-single crystal semicondutor layer on the side of the charge storing non-single crystal semiconductor layer; wherein the non-single crystal semiconductor layer has a first layer on the substrate and a second layer on the first layer to create a transition region; wherein each of said first, second, and charge storing layers is formed principally from material selected from the group consisting of Si, Si 3 N 4-x (0<x<4), SiC 1-x (0<x<1), or SiO 2-x (0<x<2) and contains material selected from the group consisting of hydrogen, chlorine, or fluorine; and wherein the first layer is P or N type and the second layer is I type, and the transition region is PI of NI depending on whether the first region is P or N type.
Claim 3
Dependent Claim
31 words
A printing member according to claim 1 wherein the chargeable layer is formed principally from material selected from the group consisting of Si 3 N 4-x (0≦X<4) or SiC 1-x (0≦x<1).
Claim 4
Dependent Claim
19 words
A printing member according to claim 1 wherein the charge storing non-single crystal semiconductor layer is formed of Si.
Claim 5
Dependent Claim
28 words
A printing member according to claim 1 wherein the charge storing non-single crystal semiconductor layer is an assembly of semiconductor grains or clusters electrically isolated from one another.
Claim 6
Dependent Claim
23 words
A printing member according to claim 4 wherein the semiconductor grains or clusters each have a diameter of from 50 Å to 2μ.
Claim 7
Dependent Claim
23 words
A printing member according to claim 1 wherein the charge storing non-single crystal semiconductor layer has a thichness from 50 Å to 5μ.
Claim 8
Dependent Claim
30 words
A printing member according to claim 1 wherein the chargeable insulating or semi-insulating layer is formed of Si 3 N 4 and has a thickness from 30 to 100 Å.
Claim 9
Dependent Claim
31 words
A printing member according to claim 1 wherein the chargeable insulating or semi-insulating layer is formed of Si 3 N 4-x (0<x<4) and has a thickness from 50 to 500 Å.
Claim 10
Dependent Claim
47 words
A printing member according to claim 1 wherein the transition from the energy band gap of said second layer to the energy hand gap of said region of the photoelectrically-sensitive non-single crystal semiconductor layer on the side of the charge storing non-single crystal semiconductor layer is continuous.
Claim 11
Dependent Claim
42 words
A printing member as in claim 1 where said first layer is of the P type use the energy difference between the valence band and the Fermi level is greater at the second, I type than at the first, P type later.
Claim 12
Dependent Claim
41 words
A printing member as in claim 1 where the first layer is N type and the energy difference between the conduction band and the Fermi level is greater at the second, I type layer than at the first, N type layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-02-24 | 1989-08-26 | 1990-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-02-24 | 1993-08-26 | 1994-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-02-24 | 1997-08-26 | 1998-02-25 | $7700.00 | Window Closed / Lapsed |