Integrated voltage-isolation power supply

Claim 2

An integrated voltage-isolation power supply, comprising: a thin film heater; a thin film thermocouple, the thermocouple comprising a hot junction and a cold junction; a thin film of dielectric; and a semiconductor body for supporting a portion of the thin film of dielectric out of contact with the body, the thin film of dielectric out of contact with the body supporting the heater and the hot junction of the thermocouple, the hot junction being disposed adjacent to the heater but out of electrical contact with the heater, the cold junction being substantially heat sunk to the semiconductor body.

Claim 3

The apparatus of claim 1 wherein: the semiconductor body has a depression therein; and the thin film of dielectric supports the at least a major portion of the heater and the hot junction of the thermocouple over the depression.

Claim 4

The apparatus of claim 2 wherein the heater comprises a thin film of permalloy.

Claim 5

The apparatus of claim 3 wherein the semiconductor body comprises silicon having a (100) surface and a [110] axis, the thin film of dielectric being attached to the (100) surface, the portion of the thin film of dielectric which is out of contact with the body forming a thin film member oriented at a nonzero angle to the [110] axis.

Claim 6

The apparatus of claim 4 wherein the nonzero angle is substantially 45°.

Claim 7

The apparatus of claim 5 wherein the dielectric comprises silicon nitride.

Claim 8

The apparatus of claim 6 wherein the thin film of dielectric encapsulates the heater and the thermocouple.

Claim 9

The apparatus of claim 1 wherein the heater comprises a thin film of permalloy.

Claim 10

The apparatus of claim 8 wherein the semiconductor body comprises silicon having a (100) surface and a [110] axis, the thin film of dielectric being attached to the (100) surface, the portion of the thin film of dielectric which is out of contact with the body forming a thin film member oriented at a nonzero angle to the [110] axis.

Claim 11

The apparatus of claim 9 wherein the nonzero angle is substantially 45°.

Claim 12

The apparatus of claim 10 wherein the dielectric comprises silicon nitride.

Claim 13

The apparatus of claim 1 wherein the semiconductor body comprises silicon having a (100) surface and a [110] axis, the thin film of dielectric being attached to the (100) surface, the portion of the thin film of dielectric which is out of contact with the body forming a thin film member oriented at a nonzero angle to the [110] axis.

Claim 14

The apparatus of claim 12 wherein the nonzero angle is substantially 45°.

Claim 15

The apparatus of claim 13 wherein the dielectric comprises silicon nitride.

Claim 16

The apparatus of claim 12 wherein the dielectric comprises silicon nitride.

Claim 17

An integrated voltage-isolation power supply, comprising: a thin film heater encapsulated in thin film dielectric; a thin film thermocouple encapsulated in thin film dielectric, the thermocouple comprising a hot junction and a cold junction, the hot junction being disposed adjacent to the heater but out of electrical contact with the heater; a semiconductor body with a depression therein; and the encapsulated heater and thermocouple hot junction forming at least one thin film member bridged across the depression so that at least a major portion of the heater and the thermocouple hot junction are supported by the member and are out of contact with the semiconductor body, the thermocouple cold junction being substantially heat sunk to the semiconductor body.

Claim 18

An integrated voltage-isolation power supply, comprising: a thin film heater encapsulated in thin film dielectric; a thin film thermocouple encapsulated in thin film dielectric, the thermocouple comprising a hot junction and a cold junction, the hot junction being disposed adjacent to the heater but out of electrical contact with the heater; a semiconductor body with a depression therein; and the encapsulated heater and thermocouple hot junction forming at least one thin film member bridged across the depression so that at least a major portion of the heater and the thermocouple hot junction are supported by the member and are out of contact with the semiconductor body, the thermocouple cold junction being substantially heat sunk to the semiconductor body.

Claim 19

The apparatus of claim 16 wherein the heater comprises a thin film of permalloy.

Claim 20

The apparatus of claim 17 wherein the semiconductor body comprises silicon having a (100) surface and a [110] axis, the at least one thin film member bridged across the depression being attached to the (100) surface and being oriented at a nonzero angle to the [110] axis.

Claim 21

The apparatus of claim 18 wherein the nonzero angle is substantially 45°.

Claim 22

The apparatus of claim 19 wherein the dielectric comprises silicon nitride.

Claim 23

The apparatus of claim 16 wherein the semiconductor body comprises silicon having a (100) surface and a [110] axis, the at least one thin film member bridged across the depression being attached to the (100) surface and being oriented at a nonzero angle to the [110] axis.

Claim 24

The apparatus of claim 21 wherein the nonzero angle is substantially 45°.

Claim 25

The apparatus of claim 22 wherein the dielectric comprises silicon nitride.

Claim 26

The apparatus of claim 21 wherein the dielectric comprises silicon nitride.

Claim 27

The apparatus of claim 1 wherein the thin film of dielectric comprises a thin film of heat conductor for conducting heat between the thin film heater and the hot junction.

Claim 28

The apparatus of claim 25 wherein the thin film of heat conductor is an electrical insulator.

Claim 29

The apparatus of claim 26 wherein the thin film of heat conductor comprises sapphire.

Claim 30

The apparatus of claim 16 wherein the at least one thin film member comprises a thin film of heat conductor for conducting heat between the thin film heater and the hot junction.

Claim 31

The apparatus of claim 28 wherein the thin film of heat conductor is an electrical insulator.

Claim 32

The apparatus of claim 29 wherein the thin film of heat conductor comprises sapphire.