Silicon carbide-aluminum nitride sintered article and process for its production

Claim 2

A silicon carbide sintered article composed essentially of elongated and/or plate-like grains of a SiC-AlN solid solution consisting essentially of from 2 to 20% by weight of Al, from 0.2 to 10% by weight of N, from 0.2 to 5% by weight of O, from 0 to 15% by weight of a Group IIIa element, and the rest being substantially Si and C.

Claim 3

The silicon carbide sintered article according to claim 1, wherein the average grain size of the grains is less than 10 μm.

Claim 4

The silicon carbide sintered article according to claim 1, wherein the average grain size of the grains is less than 5 μm.

Claim 5

The silicon carbide sintered article according to claim 1, which has a density greater than 95% of the theoretical density.

Claim 6

The silicon carbide sintered article according to claim 1, which has a density greater than 98% of the theoretical density.

Claim 7

The silicon carbide sintered article according to claim 1, which has a flexural strength of greater than 60 kg/mm 2 at room temperature and greater than 65 kg/mm 2 at 1400° C.

Claim 8

The silicon carbide sintered article according to claim 1, which has a flexural strength of greater than 65 kg/mm 2 at room temperature and greater than 70 kg/mm 2 at 1400° C.

Claim 9

The silicon carbide sintered article according to claim 1, which contains from 3 to 15% by weight of Al, from 0.2 to 4% by weight of O and from 0.1 to 10% by weight of a Group IIIa element.

Claim 10

The silicon carbide sintered article according to claim 1, which contains from 0.4 to 3% by weight of O.

Claim 11

The silicon carbide sintered article according to claim 1, which contains from 0.5 to 2% by weight of O.

Claim 12

The silicon carbide sintered article according to claim 8, which has a flexural strength of greater than 70 kg/mm 2 both at room temperature and at 1400° C.

Claim 13

The silicon carbide sintered article according to claim 11, which has a flexural strength of greater than 80 kg/mm 2 both at room temperature and at 1400° C.

Claim 14

The silicon carbide sintered article according to claim 1, wherein the Group IIIa element is at least one element selected from the group consisting of Y, La and Ce.

Claim 15

A process for producing a silicon carbide sintered article composed essentially of elongated and/or plate-like grains of a SiC-AIN solid solution, which comprises: (a) a step of mixing refractory starting material source to form a mixture which comprises, as calculated as refractory starting materials (1) from 50 to 97% by weight of SiC powder, (2) from 3 to 30% by weight of AlN powder, (3) from 0 to 15% by weight of a Group IIIa element source and (4) from 0 to 20% by weight of of at least one member selected from the group consisting of a SiO 2 source, an Al 2 O 3 source and Si 3 N 4 ; (b) a step of molding the mixture to obtain a green body; and (c) a step of sintering the green body in a non-oxidizing atmosphere at a temperature of from 1900° to 2300° C. wherein the non-oxidizing atmosphere contains a vapor an Al and/or on Al compound.

Claim 16

A process for producing a silicon carbide sintered article composed essentially of elongated and/or plate-like grains of a SiC-AIN solid solution, which comprises: (a) a step of mixing refractory starting material source to form a mixture which comprises, as calculated as refractory starting materials (1) from 50 to 97% by weight of SiC powder, (2) from 3 to 30% by weight of AlN powder, (3) from 0 to 15% by weight of a Group IIIa element source and (4) from 0 to 20% by weight of of at least one member selected from the group consisting of a SiO 2 source, an Al 2 O 3 source and Si 3 N 4 ; (b) a step of molding the mixture to obtain a green body; and (c) a step of sintering the green body in a non-oxidizing atmosphere at a temperature of from 1900° to 2300° C. wherein the non-oxidizing atmosphere contains a vapor an Al and/or on Al compound.

Claim 17

The process according to claim 14, wherein the green body is sintered with a powder and/or lump of AlN surrounding the green body.

Claim 18

The process according to claim 14, wherein the green body is sintered with a powder mixture of Al 2 O 3 and SiC and/or C, or a lump of such mixture surrounding the green body.

Claim 19

The process according to claim 14, wherein the pressure of the non-oxidizing atmosphere is from 0.5 to 1.5 atm.

Claim 20

The process according to claim 14, wherein the nonoxidizing atmosphere contains N 2 as the major component and its pressure is from 2 to 50 atm.

Claim 21

The process according to claim 14, wherein the mixture contains from 60 to 96.8% by weight of SiC powder, from 3 to 25% by weight of AlN powder, and from 0.2 to 15% by weight of a Group IIIa element source.

Claim 22

The process according to claim 14, wherein the mixture contains from 0.5 to 20% by weight of at least one member selected from the group consisting of a SiO 2 source, an Al 2 O 3 source, and Si 3 N 4 .

Claim 23

A process for producing a silicon carbide sintered article composed essentially of elongated and/or plate-like grains of a SiC-AlN solid solution, which comprises: (a) a step of mixing refractory starting material sources to form a mixture which comprises, as calculated as refractory starting materials, (1) from 50 to 97% by weight of SiC powder, (2) from 3 to 30% by weight of AlN powder, (3) from 0 to 15% by weight of a Group IIIa element source and (4) from 0 to 20% by weight of at least one member selected from the group consisting of a SiO 2 source, an Al 2 O 3 source and Si 3 N 4 ; (b) a step of molding the mixture to obtain a green body; (c) a step of sintering the green body in a non-oxidizing atmosphere at a temperature of from 1900° to 2300° C.; and (d) a step of treating the sintered body in a nonoxidizing atmosphere under pressure of from 20 to 3000 atm. at a temperature of from 1900° to 2300° C.

Claim 24

A process for producing a silicon carbide sintered article composed essentially of elongated and/or plate-like grains of a SiC-AlN solid solution, which comprises: (a) a step of mixing refractory starting material sources to form a mixture which comprises, as calculated as refractory starting materials, (1) from 50 to 97% by weight of SiC powder, (2) from 3 to 30% by weight of AlN powder, (3) from 0 to 15% by weight of a Group IIIa element source and (4) from 0 to 20% by weight of at least one member selected from the group consisting of a SiO 2 source, an Al 2 O 3 source and Si 3 N 4 ; (b) a step of molding the mixture to obtain a green body; (c) a step of sintering the green body in a non-oxidizing atmosphere at a temperature of from 1900° to 2300° C.; and (d) a step of treating the sintered body in a nonoxidizing atmosphere under pressure of from 20 to 3000 atm. at a temperature of from 1900° to 2300° C.

Claim 25

The process according to claim 21, wherein the sintered body is treated in an atmosphere under pressure of from 50 to 200 atm.

Claim 26

The process according to claim 21, wherein the sintered body is treated in an atmosphere under pressure of from 500 to 2000 atm.

Claim 27

A process for producing a silicon carbide sintered article composed essentially of elongated and/or plate-like grains of a SiC-AlN solid solution, which comprises: (a) a step of mixing refractory starting material sources to form a mixture which comprises, as calculated as refractory starting materials, (1) from 60 to 96,8% by weight of SiC powder, (2) from 3 to 25% by weight of AlN powder, (3) from 0.2 to 15% by weight of a Group IIIa element source and (4) from 0 to 20% by weight of at least one member selected from the group consisting of a SiO 2 source, an Al 2 O 3 source and Si 3 N 4 ; (b) a step of molding the mixture to obtain a green body; and (c) a step of sintering the gree body in a non-oxidizing atmosphere at a temperature of from 1900° to 2300° C.

Claim 28

A process for producing a silicon carbide sintered article composed essentially of elongated and/or plate-like grains of a SiC-AlN solid solution, which comprises: (a) a step of mixing refractory starting material sources to form a mixture which comprises, as calculated as refractory starting materials, (1) from 60 to 96,8% by weight of SiC powder, (2) from 3 to 25% by weight of AlN powder, (3) from 0.2 to 15% by weight of a Group IIIa element source and (4) from 0 to 20% by weight of at least one member selected from the group consisting of a SiO 2 source, an Al 2 O 3 source and Si 3 N 4 ; (b) a step of molding the mixture to obtain a green body; and (c) a step of sintering the gree body in a non-oxidizing atmosphere at a temperature of from 1900° to 2300° C.

Claim 29

The process according to claim 24, wherein the pressure of the non-oxidizing atmosphere is from 0.5 to 1.5 atm.

Claim 30

The process according to claim 24, wherein the non-oxidizing atmosphere contains N 2 as the major component and its pressure is from 2 to 50 atm.

Claim 31

The process according to claim 24, wherein the mixture contains from 0.5 to 20% by weight of at least one member selected from the group consisting of a SiO 2 source, an Al 2 O 3 source and Si 3 N 4 .