Patent US4569743A successfully refreshed from Google Patents.
US4569743A
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US
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Method and apparatus for the selective, self-aligned deposition of metal layers
Assignee: International Business Machines Corp
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Filing: 1984-09-10
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Granted: 1986-02-11
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Expires: 2004-09-10
Abstract
Abstract A method and apparatus for the selective deposition of metal layers on a substrate. At least one metal layer is deposited in a self-aligned manner on conductive regions on the surface of isolating or semiconductive substrates, for which purpose the conductive regions are arranged facing a metal plate having at least one layer of the metal to be deposited, and Tesla currents are generated between the metal plate and the regions to be coated. The apparatus for implementing the method includes a metal plate, a Tesla transformer which is coupled to the metal plate or to a metal grid, spaced apart from the surface of the metal plate away from the conductive regions, having closely adjacent and regularly distributed spikes pointing towards the metal. This method may be used, for example, to produce conductors on or in ceramic modules, circuit cards and semiconductor elements.
Inventors
- 👤 Thomas Bayer
- 👤 Georg Kraus
- 👤 Ulrich Kuenzel
- 👤 Gisela Renz
- 👤 Rolf Schaefer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 02:49
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3178; C; C23; C23C; C23C14/00; C23C14/04; C23C14/22; C23C14/34; H01J37/32; H05; H05K; H05K3/00; H05K3/10; H05K3/14; H05K3/146
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
92 words
A method for the selective, self-aligned deposition of at least one metal on conductive regions on the surface of a substrate, comprising: positioning an insulating plate having thereon a layer of said at least one metal to be deposited facing and at a predetermined distance from said surface of said substrate; and generating a current between said plate and said conductive regions of said substrate by capacitively coupling an RF power source to said plate, thereby selectively transferring said at least one metal layer from said plate only to said conductive regions.
Claim 2
Independent Claim
92 words
A method for the selective, self-aligned deposition of at least one metal on conductive regions on the surface of a substrate, comprising: positioning an insulating plate having thereon a layer of said at least one metal to be deposited facing and at a predetermined distance from said surface of said substrate; and generating a current between said plate and said conductive regions of said substrate by capacitively coupling an RF power source to said plate, thereby selectively transferring said at least one metal layer from said plate only to said conductive regions.
Claim 3
Dependent Claim
24 words
The method of claim 1, wherein said at least one metal is selected from the group consisting of silver, gold, nickel, chromium and copper.
Claim 4
Dependent Claim
56 words
The method of claim 1, wherein said step of generating a current comprises coupling a power source having a voltage of 10-100 kV, a frequency of 400-500 kHZ, and a power density of 0.1-100 W/cm 2 to said plate, and wherein the spacing between said plate and the surface of said substrate ranges from 5-100 μm.
Claim 5
Dependent Claim
56 words
The method of claim 3, wherein said step of generating a current comprises coupling a power source having a voltage of about 50 kV, a frequency of about 450 kHz, and a power density of about 5 W/cm 2 to said plate, and wherein the spacing between said plate and said substrate is about 10 μm.
Claim 6
Dependent Claim
24 words
The method of claim 3 or 4, further comprising: coupling a bias potential ranging from 0-100 V to said conductive regions on said substrate.
Claim 7
Dependent Claim
33 words
The method of claim 5, wherein said plate has at least two layers of different metals formed thereon in the reverse order in which they are to be deposited on said conductive regions.
Claim 8
Dependent Claim
19 words
The method of claim 6, wherein said step of generating a current is implemented in an atmosphere comprising air.
Claim 9
Dependent Claim
25 words
The method of claim 7, further including the step of: controlling the deposition rate of said at least one metal by regulating said bias potential.
Claim 10
Dependent Claim
15 words
The method of claim 8, further including the step of: thermally treating said deposited metallization.
Claim 11
Dependent Claim
20 words
The method of claim 6 wherein said step of generating current is implemented in an atmosphere comprising an inert gas.
Claim 12
Dependent Claim
25 words
The method of claim 10, further including the step of: controlling the deposition rate of said at least one metal by regulating said bias potential.
Claim 13
Dependent Claim
15 words
The method of claim 11, further including the step of: thermally treating said deposited metallization.
Claim 14
Independent Claim
104 words
A method for the selective, self-aligned deposition of at least one metal layer on conductive regions on the surface of a substrate, comprising: positioning an insulating plate having thereon a layer of said at least one metal to be deposited facing and at a predetermined distance from said surface of said substrate; generating a current between said plate and said conductive regions of said substrate by capacitively coupling an RF power source to said plate, thereby selectively transferring said at least one metal layer from said plate only to said conductive regions; and coupling a bias potential to said conductive regions on said substrate.
Claim 15
Independent Claim
104 words
A method for the selective, self-aligned deposition of at least one metal layer on conductive regions on the surface of a substrate, comprising: positioning an insulating plate having thereon a layer of said at least one metal to be deposited facing and at a predetermined distance from said surface of said substrate; generating a current between said plate and said conductive regions of said substrate by capacitively coupling an RF power source to said plate, thereby selectively transferring said at least one metal layer from said plate only to said conductive regions; and coupling a bias potential to said conductive regions on said substrate.
Claim 16
Dependent Claim
64 words
The method of claim 13, wherein said step of generating a current comprises coupling a power source having a voltage of 10-100 kV, a frequency of 400-500 kHz, and a power density of 0.1-100 w/cm 2 to said plate, wherein the spacing between said plate and the surface of said substrate ranges from 5-100 μm, and wherein said bias potential ranges from 0-100 V.
Claim 17
Dependent Claim
24 words
The method of claim 14, wherein said at least one metal is selected from the group consisting of silver, gold, nickel, chromium and copper.
Claim 18
Dependent Claim
19 words
The method of claim 15, wherein said step of generating a current is implemented in an atmosphere comprising air.
Claim 19
Dependent Claim
21 words
The method of claim 15, wherein said step of generating a current is implemented in an atmosphere comprising an inert gas.
Claim 20
Dependent Claim
18 words
The method of claim 15, wherein said step of generating a current is implemented in substantially a vacuum.
Claim 21
Dependent Claim
18 words
The method of claim 16, 17 or 18, further including the step of thermally treating said deposited metallization.
Claim 22
Dependent Claim
25 words
The method of claim 19, further including the step of controlling the deposition rate of said at least one metal by regulating said bias potential.
Claim 23
Dependent Claim
93 words
Apparatus for the selective, self-aligned deposition of at least one metal layer on conductive regions on the surface of a substrate, comprising: a metal plate formed of said at least one metal to be deposited adapted to be spaced apart from said conductive regions on the surface of said substrate; an insulating plate affixed to the surface of said metal plate adapted to be opposite said substrate; a metal grid spaced apart from the surface of said insulating plate opposite said metal plate; and an RF power source connected to said metal grid.
Claim 24
Dependent Claim
93 words
Apparatus for the selective, self-aligned deposition of at least one metal layer on conductive regions on the surface of a substrate, comprising: a metal plate formed of said at least one metal to be deposited adapted to be spaced apart from said conductive regions on the surface of said substrate; an insulating plate affixed to the surface of said metal plate adapted to be opposite said substrate; a metal grid spaced apart from the surface of said insulating plate opposite said metal plate; and an RF power source connected to said metal grid.
Claim 25
Dependent Claim
23 words
The apparatus of claim 21, further comprising: means for applying a bias potential to said conductive regions on the surface of said substrate.
Claim 26
Dependent Claim
23 words
The apparatus of claim 22, wherein said metal grid includes a plurality of regularly distributed, downwardly projecting spikes pointing at said metal plate.
Claim 27
Dependent Claim
33 words
The apparatus of claim 23, further including an evacuatable reaction chamber in which said at least one metal is deposited, said reaction chamber having a gas inlet for adding defined quantities of gas.
Claim 28
Dependent Claim
46 words
The apparatus of claim 24, wherein said RF power source comprises: a power source having a voltage of 10-100 kV, and a frequency of 400-500 kHz, wherein the power density in the region between said metal plate and said substrate surface is 0.1-100 W/cm 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-02-10 | 1989-08-12 | 1990-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-02-10 | 1993-08-12 | 1994-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-02-10 | 1997-08-12 | 1998-02-11 | $7700.00 | Window Closed / Lapsed |