Patent US4567430A successfully refreshed from Google Patents.
US4567430A
Expired / Lapsed
US
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Semiconductor device for automation of integrated photoarray characterization
Assignee: Dresser LLC
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Filing: 1985-02-26
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Granted: 1986-01-28
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Expires: 2005-02-26
Abstract
Abstract A semiconductor device structure is used to determine minority carrier lifetime and photosensitivity for production-processed integrated circuits and devices. The device structure family described herein permits determination of the minority carrier lifetime and photosensitivity at high throughput rates using automated test equipment in a normal test facility environment.
Inventors
- 👤 William N. Carr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:22
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/282; G01R31/2831
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
112 words
A method of determining the output current of a photodiode array fabricated on a semiconductor wafer comprising the steps of: forming on the semiconductor wafer a field effect transistor having source, gate, and drain electrodes; forming an opaque shield over the field effect transistor to prevent ambient light from affecting the drain current of the field effect transistor; injecting a source current at the source electrode of the field effect transistor and measuring a drain current at the drain electrode of the field effect transistor; and determining a nominal output current for the photodiode array by correlating the measured drain current of the field effect transistor with the nominal photodiode output current.
Claim 2
Independent Claim
112 words
A method of determining the output current of a photodiode array fabricated on a semiconductor wafer comprising the steps of: forming on the semiconductor wafer a field effect transistor having source, gate, and drain electrodes; forming an opaque shield over the field effect transistor to prevent ambient light from affecting the drain current of the field effect transistor; injecting a source current at the source electrode of the field effect transistor and measuring a drain current at the drain electrode of the field effect transistor; and determining a nominal output current for the photodiode array by correlating the measured drain current of the field effect transistor with the nominal photodiode output current.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the field effect transistor gate electrode reduces lateral electric fields between the source electrode and the drain electrode.
Claim 4
Dependent Claim
22 words
The method of claim 2 wherein the gate electrode forms the opaque shield to shield the field effect transistor from ambient light.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-27 | 1989-07-29 | 1990-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-27 | 1993-07-29 | 1994-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-27 | 1997-07-29 | 1998-01-28 | $7700.00 | Window Closed / Lapsed |