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Patent US4567393A successfully refreshed from Google Patents.
US4567393A
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Surface acoustic wave device having AlN and ZnO layers on a Si substrate
Assignee: Faurecia Clarion Electronics Co Ltd
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Filing: 1984-06-11
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Granted: 1986-01-28
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Expires: 2004-06-11
Abstract
Abstract A surface acoustic wave device comprises a silicon substrate, an aluminum nitride layer provided on the silicon substrate, a zinc oxide layer provided on the aluminum nitride layer, and electrodes provided on either the silicon substrate, aluminum nitride layer or zinc oxide layer. Propagation is in the [001]- or [011]-axis direction on (100) Si, [001]- or [1 &upbar& 10]-axis on (110) Si, [112]-axis on (111) Si, or [11 &upbar& 1]-axis on (112) Si.
Inventors
- 👤 Ryuichi Asai
- 👤 Takeshi Okamoto
- 👤 Shoichi Minagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 17:07
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/25
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
61 words
A surface acoustic wave device which comprises: a silicon substrate having a major surface; an aluminum nitride layer provided on said major surface of said silicon substrate; a zinc oxide layer provided on said aluminum nitride layer; and electrodes provided on said zinc oxide layer; wherein said major surface of said silicon substrate has substantially (100)-, (110)-, (111)- or (112)-crystalline orientation.
Claim 2
Dependent Claim
61 words
A surface acoustic wave device which comprises: a silicon substrate having a major surface; an aluminum nitride layer provided on said major surface of said silicon substrate; a zinc oxide layer provided on said aluminum nitride layer; and electrodes provided on said zinc oxide layer; wherein said major surface of said silicon substrate has substantially (100)-, (110)-, (111)- or (112)-crystalline orientation.
Claim 3
Dependent Claim
61 words
A surface acoustic wave device which comprises: a silicon substrate having a major surface; an aluminum nitride layer provided on said major surface of said silicon substrate; a zinc oxide layer provided on said aluminum nitride layer; and electrodes provided on said silicon substrate; wherein said major surface of said silicon substrate has substantially (100)-, (110)-, (111)- or (112)- crystalline orientation.
Claim 4
Dependent Claim
61 words
A surface acoustic wave device which comprises: a silicon substrate having a major surface; an aluminum nitride layer provided on said major surface of said silicon substrate; a zinc oxide layer provided on said aluminum nitride layer; and electrodes provided on said silicon substrate; wherein said major surface of said silicon substrate has substantially (100)-, (110)-, (111)- or (112)- crystalline orientation.
Claim 5
Dependent Claim
59 words
A surface acoustic wave device as claimed in claim 2 wherein a surface acoustic wave is propagated substantially in the [001]- or [011]-axis direction on said (100)-oriented substrate surface, in the [001]- or [110]-axis direction on said (110)-oriented substrate surface, and in the [112]-axis direction on said (111)-oriented substrate surface, in the [111]-axis direction on said (112)-oriented substrate surface.
Claim 6
Dependent Claim
37 words
A surface acoustic wave device as claimed in claim 2 wherein said zinc oxide layer has a thickness h 1 which satisfies the relation 0<ωh 1 ≦15500.0, wherein ω is the angular frequency of the acoustic wave.
Claim 7
Dependent Claim
38 words
A surface acoustic wave device as claimed in claim 2 wherein said aluminum nitride layer has a thickness h 2 which satisfies the relation 0<ωh 2 ≦15500.0, wherein ω is the angular frequency of said surface acoustic wave.
Claim 8
Dependent Claim
33 words
A surface acoustic wave device as claimed in claim 2 wherein a conductive layer is provided on at least one of said silicon substrate, said aluminum nitride layer and said zinc oxide layer.
Claim 9
Dependent Claim
33 words
A surface acoustic wave device as claimed in claim 1 wherein a conductive layer is provided on at least one of said silicon substrate, said aluminum nitride layer and said zinc oxide layer.
Claim 10
Dependent Claim
61 words
A surface acoustic wave device which comprises: a silicon substrate having a major surface; an aluminum nitride layer provided on said major surface of said silicon substrate; a zinc oxide layer provided on said aluminum nitride layer; and electrodes provided on said aluminum nitride layer; wherein said major surface of said silicon substrate has substantially (100)-, (110)-, (111)- or (112)-crystalline orientation.
Claim 11
Dependent Claim
61 words
A surface acoustic wave device which comprises: a silicon substrate having a major surface; an aluminum nitride layer provided on said major surface of said silicon substrate; a zinc oxide layer provided on said aluminum nitride layer; and electrodes provided on said aluminum nitride layer; wherein said major surface of said silicon substrate has substantially (100)-, (110)-, (111)- or (112)-crystalline orientation.
Claim 12
Dependent Claim
59 words
A surface acoustic wave device as claimed in claim 8 wherein a surface acoustic wave is propagated substantially in the [001]- or [011]-axis direction on said (100)-oriented substrate surface, in the [001]- or [110]-axis direction on said (110)-oriented substrate surface, in the [112]-axis direction on said (111)-oriented substrate surface, and in the [111]-axis direction on said (112)-oriented substrate surface.
Claim 13
Dependent Claim
37 words
A surface acoustic wave device as claimed in claim 8 wherein said zinc oxide layer has a thickness h 1 which satisfies the relation 0<ωh 1 ≦15500.0, wherein ω is the angular frequency of the acoustic wave.
Claim 14
Dependent Claim
38 words
A surface acoustic wave device as claimed in claim 8 wherein said aluminum nitride layer has a thickness h 2 which satisfies the relation 0<ωh 2 ≦15500.0, wherein ω is the angular frequency of the surface acoustic wave.
Claim 15
Dependent Claim
33 words
A surface acoustic wave device as claimed in claim 8 wherein a conductive layer is provided on at least one of said silicon substrate, said aluminum nitride layer and said zinc oxide layer.
Claim 16
Dependent Claim
37 words
A surface acoustic wave device as claimed in claim 1 wherein said zinc oxide layer has a thickness h 1 which satisfies the relation 0<ωh 1 ≦15500.0, wherein ω is the angular frequency of the acoustic wave.
Claim 17
Dependent Claim
38 words
A surface acoustic wave device as claimed in claim 1 wherein said aluminum nitride layer has a thickness h 2 which satisfies the relation 0<ωh 2 ≦15500.0, wherein ω is the angular frequency of the surface acoustic wave.
Claim 18
Dependent Claim
59 words
A surface acoustic wave device as claimed in claim 1 wherein a surface acoustic wave is propagated substantially in the [001]- or [011]-axis direction on said (100)-orientated substrate surface, in the [001]- or [110]-axis direction on said (110)-oriented substrate surface, in the [112]-axis direction on said (111)-oriented substrate surface, and in the [111]-axis direction on said (112)-oriented substrate surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-27 | 1989-07-29 | 1990-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-27 | 1993-07-29 | 1994-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-27 | 1997-07-29 | 1998-01-28 | $7700.00 | Window Closed / Lapsed |