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US4565671A Expired / Lapsed US ⏱️ 0.0 years remaining

Single crystal manufacturing apparatus

Assignee: Toshiba Corp
•
Filing: 1984-08-01
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Granted: 1986-01-21
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Expires: 2004-08-01
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Abstract

Abstract A single crystal manufacturing apparatus has a pulling mechanism and a magnetic field generating unit. The pulling mechanism grows a single crystal by inserting a seed crystal into a melting liquid of a single crystal raw material and pulling the seed crystal from the melting liquid at a predetermined speed. The generating unit has a pair of superconductive magnets for applying a magnetic field to the melting liquid. The magnetic field applied from the magnets suppresses a thermal convection in the vicinity of the surface of the melting liquid and allows the thermal convection in the region of the melting liquid below the surface thereof.

Inventors

  • 👤 Kinya Matsutani
  • 👤 Toshikazu Yokota

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 04:41
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/30; C30B15/305; Y; Y10; Y10S; Y10S117/00; Y10S117/917; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1032; Y10T117/1068

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 123 words
A single crystal manufacturing apparatus comprising: a crucible containing a melting liquid of a single crystal raw material; heating means arranged outside the crucible for heating the melting liquid; a pulling mechanism having a seed crystal movably supported substantially along a perpendicular direction to the surface of the melting liquid for growing a single crystal by inserting the seed crystal into the melting liquid and then pulling the seed crystal from the melting liquid; and magnetic field generating means having a superconductive magnet for applying to the melting liquid a magnetic field for suppressing a thermal convection in the vicinity of the surface of the melting liquid and allowing the thermal convection in the region of the melting liquid below the surface thereof.
Claim 2
Dependent Claim 123 words
A single crystal manufacturing apparatus comprising: a crucible containing a melting liquid of a single crystal raw material; heating means arranged outside the crucible for heating the melting liquid; a pulling mechanism having a seed crystal movably supported substantially along a perpendicular direction to the surface of the melting liquid for growing a single crystal by inserting the seed crystal into the melting liquid and then pulling the seed crystal from the melting liquid; and magnetic field generating means having a superconductive magnet for applying to the melting liquid a magnetic field for suppressing a thermal convection in the vicinity of the surface of the melting liquid and allowing the thermal convection in the region of the melting liquid below the surface thereof.
Claim 3
Dependent Claim 51 words
The single crystal manufacturing apparatus according to claim 1, wherein said magnetic field generating means includes first and second superconductive magnets arranged opposite to each other with the crucible interposed therebetween, and the superconductive magnets applying a magnetic field parallel to the surface of the melting liquid to the melting liquid.
Claim 4
Dependent Claim 56 words
The single crystal manufacturing apparatus according to claim 2, wherein each of said first and second superconductive magnets includes a superconductive coil and an insulating vessel for containing the coil, and the superconductive coils are arranged coaxially with each other and the central axes thereof are arranged to coincide with the surface of the melting liquid.
Claim 5
Dependent Claim 38 words
The single crystal manufacturing apparatus according to claim 2, wherein said magnetic field generating means includes a support body supporting the first and second superconductive magnets and being arranged to be movable toward and away from the crucible.
Claim 6
Dependent Claim 72 words
The single crystal manufacturing apparatus according to claim 4, wherein said support body has a first support portion for supporting the first superconductive magnet, a second support portion for supporting the second superconductive magnet, and a connecting portion for connecting the first and second support portions to each other, and said first and second support portions being arranged to be movable along a direction parallel to the surface of the melting liquid.
Claim 7
Dependent Claim 66 words
The single crystal manufacturing apparatus according to claim 5, wherein said connecting portion is divided into a first section connected to the first support portion and a second section connected to the second support portion, the support body includes shrinkable joint means for connecting the first and second sections, thereby providing the first and second support portions to be movable toward and away from each other.
Claim 8
Dependent Claim 34 words
The single crystal manufacturing apparatus according to claim 6, wherein said support body includes fastening means for defining the shrinkage of the joint means to fix an interval between the first and second sections.
Claim 9
Dependent Claim 66 words
The single crystal manufacturing apparatus according to claim 1, wherein said superconductive magnet includes a superconductive coil and an insulated vessel for containing the coil, and the superconductive coil is arranged so that the central axis thereof is perpendicular to the surface of the melting liquid, and applies a magnetic field to the melting liquid in a direction perpendicular to the surface of the melting liquid.
Claim 10
Dependent Claim 26 words
The single crystal manufacturing apparatus according to claim 8, wherein said superconductive coil is arranged in the same plane as the surface of the melting liquid.
Claim 11
Dependent Claim 40 words
The single crystal manufacturing apparatus according to claim 1, wherein said magnetic field generating means includes a magnet for applying a rotary magnetic field to the melting liquid for agitating the region of the melting liquid below the surface thereof.
Claim 12
Dependent Claim 37 words
The single crystal manufacturing apparatus according to claim 1, which further comprises ultrasonic wave generating means for applying a supersonic wave to the melting liquid for agitating the region in the melting liquid below the surface thereof.

References Cited (Backward Citations)

US3607139A Cited
GB1347108A Cited
JPS5645889A Cited
JPS56104791A Cited
JPS57149894A Cited
GB2109267A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-01-20 1989-07-22 1990-01-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-01-20 1993-07-22 1994-01-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-01-20 1997-07-22 1998-01-21 $7700.00 Window Closed / Lapsed

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