Growing method of semiconductor single crystal

Abstract

Abstract PURPOSE: To efficiently obtain a semiconductor single crystal with uniform characteristics by arranging a heating means with a direct current around a container holding a semiconductor crystal growing melt and by applying a magnetic field of a predetermined direction to perform stable crystal growth. CONSTITUTION: Heating means 4 is arranged around container 2 holding semiconductor melt 3 such as Si melt so that current heater 5 forms a cylindrical plane along the outside of container 2 in a zigzag pattern, and magnetic field generating means 7 is set outside means 4. Seed single crystal 8 can be pulled up with chuck 9. When a direct current of 3% ripple is supplied to heater 5 of means 4 in a 4,100G magnetic field generated with means 7 to carry out heating, the outlines of the surface of melt 3 can be observed clearly and the surface undergoes little vibration. Thus, a high quality single crystal can be grown stably. COPYRIGHT: (C)1981,JPO&Japio

Inventors

• 👤 Toshihiko Suzuki
• 👤 Nobuyuki Izawa
• 👤 Yasunori Okubo
• 👤 Kinji Hoshi

Bibliographic Details