Patent US4561007A successfully refreshed from Google Patents.
US4561007A
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Double mesa avalanche photodetector
Assignee: RCA Inc
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Filing: 1984-09-14
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Granted: 1985-12-24
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Expires: 2004-09-14
Abstract
Abstract The invention relates to a photodetector wherein the avalanche region is separated from the detector surfaces by a region in which the electric field under reverse bias will be less than in the avalanche region. This photodetector includes an absorptive region having a planar surface area surrounded by a non-planar surface area. A first region overlies the planar area and a second region of opposite conductivity type overlies both the first region and the non-planar area of the absorptive region. The high electric fields are restricted to the first region which is isolated from the surfaces of the photodetector.
Inventors
- 👤 Paul P. Webb
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:10
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1248; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; H10F30/2255; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
91 words
An avalanche photodetector comprising a semiconductor substrate having first and second major surfaces; an absorptive region overlying the first major surface and having a region surface comprising a planar area and a surrounding non-planar area; a first region overlying said planar area; a second region overlying the first region and said non-planar area; a first electrical contact overlying said second region; and a second electrical contact to the substrate; the substrate, the absorptive region and the first region have one conductivity type and the second region has the opposite conductivity type.
Claim 2
Dependent Claim
91 words
An avalanche photodetector comprising a semiconductor substrate having first and second major surfaces; an absorptive region overlying the first major surface and having a region surface comprising a planar area and a surrounding non-planar area; a first region overlying said planar area; a second region overlying the first region and said non-planar area; a first electrical contact overlying said second region; and a second electrical contact to the substrate; the substrate, the absorptive region and the first region have one conductivity type and the second region has the opposite conductivity type.
Claim 3
Dependent Claim
27 words
The photodetector of claim 1 wherein the areal concentration of the conductivity modifiers in the first region is between about 2.5 and 4×10 12 /cm 2 .
Claim 4
Dependent Claim
19 words
The photodetector of claim 2 wherein the thickness of the first region is between about 0.5 and 2.5 micrometers.
Claim 5
Dependent Claim
16 words
The photodetector of claim 3 further comprising a buffer region between the absorptive and first regions.
Claim 6
Dependent Claim
58 words
The photodetector of claim 1 wherein the first region is composed of N-type InP, the second region is composed of P-type InP and the absorptive region has ν-type conductivity and is composed of a material selected from a group consisting of In 0 .57 Ga 0 .43 As and In x Ga 1-x As y P 1-y alloys.
Claim 7
Dependent Claim
16 words
The photodetector of claim 5 further comprising a buffer region between the absorptive and first regions.
Claim 8
Dependent Claim
16 words
The photodetector of claim 5 wherein the absorptive region has a thickness greater than 3 μm.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-12-23 | 1989-06-24 | 1989-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-12-23 | 1993-06-24 | 1993-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-12-23 | 1997-06-24 | 1997-12-24 | $7700.00 | Window Closed / Lapsed |