Semiconductor laser with coupled loss modulator for optical telecommunications

Claim 2

A semiconductor laser source comprising (a) a first semiconductor heterojunction section for generating single-mode CW optical radiation; (b) a second semiconductor heterojunction section, the first and second sections having substantially identical heterojunction cross sections which are mutually optically coupled and closely spaced from each other at the closest approach of an end facet, respectively, of each of the first and second sections; (c) means for applying a variable voltage to the second section in order to modulate optical loss in said second section; and (d) an optical anti-reflection layer optically coupled to another, opposite end facet of the second section, whereby the optical radiation generated in the first section is modulated by the second section and passes through the anti-reflection layer.

Claim 3

A laser source according to claim 1 in which the first and second sections are formed by cleaving a monolithic heterojunction structure.

Claim 4

A laser source according to claim 1 in which the first section comprises first and second semiconductor heterojunction subsections, each having a heterojunction structure that is substantially identical to that of the second section, the first and second subsections being mutually optically coupled and closely spaced from each other.

Claim 5

A laser source according to claim 3 in which the first and second sections are formed by cleaving a monolithic heterojunction structure.

Claim 6

A laser source according to claim 3 in which the first and second sections are formed by cleaving a monolithic structure and in which the first and second subsections are formed by cleaving the first section.

Claim 7

A source according to claim 1 further comprising an optical fiber having an end surface optically coupled to the anti-reflection layer.

Claim 8

A source according to claim 6 in which the first and second sections are formed by cleaving a monolithic heterojunction structure.

Claim 9

A source according to claim 6 further comprising optical reflecting means located at another, opposite end surface of the fiber to reflect optical radiation emanating from such opposite end surface of the fiber back into the fiber.

Claim 10

A source according to claim 8 in which the first and second sections are formed by cleaving a monolithic heterojunction structure.

Claim 11

A semiconductor laser source comprising: (a) a first semiconductor junction diode section; (b) a second semiconductor junction diode section having one side facet spaced from, and located in an optical coupling relationship with, a first side facet of the first section; (c) a third semiconductor junction diode section having one side facet coated with an optical anti-reflection coating and having another side facet opposite the one side facet thereof spaced from, and located in an optical coupling relationship with, another side facet of the second section opposite the one side facet thereof; (d) means for applying a relatively steady forward current bias to the first and second junction diode sections sufficient to produce CW laser action therein; and (e) means for applying a variable voltage to the third junction diode section in accordance with a signal, in order to modulate optical loss in the third section, whereby a single-frequency optical beam emanates from the one side facet of the third section with an intensity modulated in accordance with the signal.

Claim 12

A semiconductor laser source comprising: (a) a first semiconductor junction diode section; (b) a second semiconductor junction diode section having one side facet spaced from, and located in an optical coupling relationship with, a first side facet of the first section; (c) a third semiconductor junction diode section having one side facet coated with an optical anti-reflection coating and having another side facet opposite the one side facet thereof spaced from, and located in an optical coupling relationship with, another side facet of the second section opposite the one side facet thereof; (d) means for applying a relatively steady forward current bias to the first and second junction diode sections sufficient to produce CW laser action therein; and (e) means for applying a variable voltage to the third junction diode section in accordance with a signal, in order to modulate optical loss in the third section, whereby a single-frequency optical beam emanates from the one side facet of the third section with an intensity modulated in accordance with the signal.

Claim 13

The source of claim 10 in which the variable voltage is in the reverse bias direction in the third section when the signal goes to its low level.

Claim 14

The source of claim 11 in which the first, second, and third sections are formed by cleaving, at two separate locations, a monolithic semiconductor heterojunction structure.

Claim 15

An optical transmission system including the source of claim 10 and further comprising an optical fiber directly optically coupled to the one side facet of the third section and in which the first, second, and third sections are formed by cleaving, at two separate locations, a monolithic semiconductor junction structure.

Claim 16

The source of claim 10 in which the first and second sections are spaced by about 14 microns or less, and in which the second and third sections are spaced by about 2 microns or less.

Claim 17

A semiconductor laser source comprising: (a) a first semiconductor junction diode section having a first side facet; (b) a second semiconductor junction diode section having one side facet spaced by a distance in the range of 0.1 to about 4 microns from the first side facet of the first section; (c) a third semiconductor junction diode section having one side facet coated with an optical anti-reflection coating which reflects less than about 1/10 percent of optical intensity incident thereon and having another side facet opposite the one side facet thereof spaced by a distance in the range of about 0.1 to about 2 microns from another side facet of the second section opposite the one side facet thereof; (d) means for applying a relatively steady forward current bias to the first and second junction diode sections sufficient to produce CW single-mode laser action therein; and (e) means for applying a variable voltage to the third junction diode section in accordance with a signal, in order to modulate optical loss in the third section, whereby a single-mode optical beam emanates from the one side facet of the third section with an intensity modulated in accordance with the signal.

Claim 18

A semiconductor laser source comprising: (a) a first semiconductor junction diode section having a first side facet; (b) a second semiconductor junction diode section having one side facet spaced by a distance in the range of 0.1 to about 4 microns from the first side facet of the first section; (c) a third semiconductor junction diode section having one side facet coated with an optical anti-reflection coating which reflects less than about 1/10 percent of optical intensity incident thereon and having another side facet opposite the one side facet thereof spaced by a distance in the range of about 0.1 to about 2 microns from another side facet of the second section opposite the one side facet thereof; (d) means for applying a relatively steady forward current bias to the first and second junction diode sections sufficient to produce CW single-mode laser action therein; and (e) means for applying a variable voltage to the third junction diode section in accordance with a signal, in order to modulate optical loss in the third section, whereby a single-mode optical beam emanates from the one side facet of the third section with an intensity modulated in accordance with the signal.

Claim 19

The source of claim 15 in which a second side facet of the first section opposite to the first side facet is coated with an optical reflection coating which reflects at least about 40 percent of the optional intensity incident thereon.

Claim 20

The source of claim 15 in which the variable voltage is in the reverse bias junction direction in the third section when the signal goes to its low level.

Claim 21

The source of claim 17 in which a second side facet of the first section opposite to the first side facet is coated with an optical reflection coating which reflects at least about 40 percent of the optional intensity incident thereon.

Claim 22

The source of claim 17 in which the first, second, and third sections are formed by cleaving, at two separate locations, a monolithic semiconductor heterojunction structure.

Claim 23

The source of claim 19 in which a second side facet of the first section opposite to the first side facet is coated with an optical reflection coating which reflects at least about 40 percent of the optional intensity incident thereon.

Claim 24

The source of claim 19 in which the first, second, and third sections are formed by cleaving, at two separate locations, a monolithic semiconductor heterojunction structure.

Claim 25

The source of claim 21 in which a second side facet of the first section opposite to the first side facet is coated with an optical reflection coating which reflects at least about 40 percent of the optional intensity incident thereon.

Claim 26

An optical system including the source of claim 11 and further comprising an optical fiber directly optically coupled to the one side facet of the third section.

Claim 27

The source of claim 23 in which a second side facet of the first section opposite to the first side facet is coated with an optical reflection coating which reflects at least about 40 percent of the optional intensity incident thereon.

Claim 28

The source of claim 15 which further comprises an optical fiber directly optically coupled to the one side facet of the third section.