US4558346A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Highly reliable hermetically sealed package for a semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1983-03-23
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Granted: 1985-12-10
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Expires: 2003-03-23
Abstract
Abstract A semiconductor device having a hermetically sealed package which includes a package substrate having a gold layer, an integrated-circuit chip attached to the gold layer, a terminal metal chip attached to the gold layer so as to ground the terminal metal chips leads, bonding wires, a cap, and glass layers for sealing the device. The terminal metal chip has a lower coating layer made of a gold-silicon type of alloy for attachment. The bond strength of the terminal metal chip is not decreased although a heat treatment is carried out to seal the glass.
Inventors
- 👤 Susumu Kida
- 👤 Hayato Usami
- 👤 Hideji Aoki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:46
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H10W72/00; H10W72/30; H10W76/00; H10W76/10; H10W76/12; H10W76/15; H10W76/157; H10W95/00; H10W70/67; H10W70/68; H10W70/682; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/90; H10W72/931; H10W72/932; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/751; H10W90/754; H10W90/756; Y; Y10; Y10S; Y10S228/00; Y10S228/904; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
156 words
A semiconductor device comprising: a package substrate having a gold layer and terminal areas; an integrated circuit chip formed of silicon, attached to said gold layer and having a plurality of bonding pads formed thereon; a terminal metal chip attached to said gold layer, comprising: a metal base having first and second surfaces; an upper coating layer formed on said first surface of said metal base, of a metal selected from the group consisting of aluminum and an aluminum-silicon alloy; and a lower coating layer formed on said second surface of said metal base, made of a gold-silicon type of alloy and joined to said gold layer, said upper and lower coating layers applied to said metal base before said terminal metal chip is attached to said gold layer; and bonding wires electrically connecting said terminal areas to said upper coating layer of said terminal metal chip and to said bonding pads of said integrated-circuit chip.
Claim 2
Dependent Claim
156 words
A semiconductor device comprising: a package substrate having a gold layer and terminal areas; an integrated circuit chip formed of silicon, attached to said gold layer and having a plurality of bonding pads formed thereon; a terminal metal chip attached to said gold layer, comprising: a metal base having first and second surfaces; an upper coating layer formed on said first surface of said metal base, of a metal selected from the group consisting of aluminum and an aluminum-silicon alloy; and a lower coating layer formed on said second surface of said metal base, made of a gold-silicon type of alloy and joined to said gold layer, said upper and lower coating layers applied to said metal base before said terminal metal chip is attached to said gold layer; and bonding wires electrically connecting said terminal areas to said upper coating layer of said terminal metal chip and to said bonding pads of said integrated-circuit chip.
Claim 3
Dependent Claim
29 words
A semiconductor device according to claim 1, wherein said metal base is made of a metal selected from the group consisting of an iron-nickel-cobalt alloy and an iron-nickel alloy.
Claim 4
Dependent Claim
29 words
A semiconductor device according to claim 1, wherein said gold-silicon type of alloy is a metal selected from the group consisting of a gold-silicon alloy and a gold-germanium-silicon alloy.
Claim 5
Dependent Claim
73 words
A terminal connected to an integrated circuit device comprising: a metal base having first and second surfaces; an upper coating layer, formed on said first surface of said metal base, of a metal selected from the group consisting of aluminum and an aluminum silicon alloy; and a lower coating layer, formed on said second surface of said metal base and operatively connected to the integrated circuit device, of a gold-silicon type of alloy.
Claim 6
Dependent Claim
73 words
A terminal connected to an integrated circuit device comprising: a metal base having first and second surfaces; an upper coating layer, formed on said first surface of said metal base, of a metal selected from the group consisting of aluminum and an aluminum silicon alloy; and a lower coating layer, formed on said second surface of said metal base and operatively connected to the integrated circuit device, of a gold-silicon type of alloy.
Claim 7
Dependent Claim
15 words
A terminal according to claim 4, wherein said metal base is approximately 0.5 mm thick.
Claim 8
Dependent Claim
20 words
A terminal according to claim 4, wherein said upper coating layer has a thickness of from 5 to 15 μm.
Claim 9
Dependent Claim
20 words
A terminal according to claim 4, wherein said lower coating layer has a thickness of from 25 to 35 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-12-09 | 1989-06-10 | 1989-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-12-09 | 1993-06-10 | 1993-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-12-09 | 1997-06-10 | 1997-12-10 | $7700.00 | Window Closed / Lapsed |