Magnetron sputter etching system

Claim 2

A magnetron etching device, comprising in combination, a low pressure gas chamber for positioning an object having a surface to be etched; means for creating an electrical field between said surface to be etched and a collector surface means; a magnetic source connected to a means for moving said magnetic source with respect to the object to be etched, such that the lines of magnetic flux created move above the etch surface of the object to be etched, said magnetic source being spaced from said object when said object is positioned in said gas chamber and said magnetic source being located on the etch surface side of the object to be etched; means for injecting an inert gas into said chamber; whereby the etched material may be transferred from the object to the collector surface means and the motion of the magnetic source can etch the object uniformly.

Claim 3

The device of claim 1 further including, a plurality of magnetic sources, each of which is movable relative to the surface to be etched.

Claim 4

The device of claim 1 wherein: the means for moving the magnetic source include means for moving the magnetic source in random motions.

Claim 5

The device of claim 1 wherein: the means for moving the magnetic source include means for moving the magnetic source in a circular path.

Claim 6

The device of claim 1 wherein: said means for creating an electrical field is a means for creating an RF electrical field.

Claim 7

The device of claim 5 wherein: the magnetic source is a plurality of permanent magnets radially oriented within a magnetically permeable ring encased in stainless steel and connected to a drive shaft driven by vanes adapted to be struck by a flow of coolant to cause the eccentric rotation of said magnetic source.

Claim 8

The device of claim 5 wherein: said object to be etched comprises a pair of planar substrates oriented in substantially parallel planes with said magnetic source intermediate to and in a parallel plane with said planar substrates.

Claim 9

The device of claim 7 wherein: more than one pair of said substrates and magnetic source associated herewith may be located within said low pressure inert gas chamber.

Claim 10

The device of claim 5 wherein: said means for moving the magnetic source causes translational motion of said magnetic source.

Claim 11

A planar magnetron etching device comprising, in combination: magnetic means for providing fringing magnetic field lines; means for receiving said magnetic means and moving said magnetic means; means for supporting a substrate such that one surface of the substrate is exposed for etching; said support means being positioned relative to said magnetic means such that when a substrate is supported by said supporting means the exposed etch surface of the substrate faces said magnetic means, whereby said magnetic means projects magnetic field lines into the space adjacent the exposed etch surface of the substrate without first passing through the substrate; means for applying an electrical field to the substrate; a process chamber in which the substrate is located; means for evacuating said process chamber; and means for injecting an etch gas into the process chamber whereby said magnetic means may be moved relative to the substrate to cause the lines of magnetic flux to move relative to the surface of the substrate at the same time the electrical field is applied in a low pressure environment of the etch gas, and the substrate may be uniformly etched.

Claim 12

A planar magnetron etching device comprising, in combination: magnetic means for providing fringing magnetic field lines; means for receiving said magnetic means and moving said magnetic means; means for supporting a substrate such that one surface of the substrate is exposed for etching; said support means being positioned relative to said magnetic means such that when a substrate is supported by said supporting means the exposed etch surface of the substrate faces said magnetic means, whereby said magnetic means projects magnetic field lines into the space adjacent the exposed etch surface of the substrate without first passing through the substrate; means for applying an electrical field to the substrate; a process chamber in which the substrate is located; means for evacuating said process chamber; and means for injecting an etch gas into the process chamber whereby said magnetic means may be moved relative to the substrate to cause the lines of magnetic flux to move relative to the surface of the substrate at the same time the electrical field is applied in a low pressure environment of the etch gas, and the substrate may be uniformly etched.

Claim 13

The device of claim 10 wherein: the means for moving the magnetic means is a hydraulic pressure source positioned to act on a multi-vane.

Claim 14

The device of claim 10 wherein: the means for moving the magnetic means is an electric motor.

Claim 15

The device of claim 10 wherein: the magnetic means includes a plurality of permanent magnets arranged as radial spokes within a retaining ring.

Claim 16

The device of claim 10 wherein: the permanent magnets are arranged with alternating poles towards a center of the retaining ring.

Claim 17

The device of claim 10 wherein: said means for applying an electrical field is a means for applying an RF electrical field.

Claim 18

The device of claim 10 wherein: said means for supporting a substrate includes means for moving the substrate relative to said magnetic means.