Patent US2760443A successfully refreshed from Google Patents.
Patent US4550612A successfully refreshed from Google Patents.
US4550612A
Expired / Lapsed
US
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Integrated pressure sensor
Assignee: Hitachi Ltd
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Filing: 1984-05-31
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Granted: 1985-11-05
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Expires: 2004-05-31
Abstract
Abstract In an integrated pressure sensor, a silicon chip for pressure detection and a substrate for supporting the silicon chip are made of the same material, the silicon chip has a thin diaphragm portion and a peripheral fixed portion thicker than the diaphragm portion, and the silicon chip is bonded to the substrate through a thin insulating film.
Inventors
- 👤 Kazuji Yamada
- 👤 Shigeyuki Kobori
- 👤 Satoshi Shimada
- 👤 Ryosaku Kanzawa
- 👤 Ryoichi Kobayashi
- 👤 Hideo Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 22:37
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/50; G; G01; G01L; G01L7/00; G01L7/02; G01L7/04; G01L7/043; G01L9/00; G01L9/0041; G01L9/0051; G01L9/0052; G01L9/0054
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
76 words
An integrated pressure sensor comprising: a silicon chip having a thin diaphragm portion and a peripheral fixed portion, gauge resistors being formed on said diaphragm portion, said fixed portion being thicker than said diaphragm portion; a substrate made of the same material as said silicon chip for supporting said silicon chip; a thin insulating film interposed between said silicon chip and said substrate; and a signal processing circuit formed in the surface of said fixed portion.
Claim 2
Dependent Claim
76 words
An integrated pressure sensor comprising: a silicon chip having a thin diaphragm portion and a peripheral fixed portion, gauge resistors being formed on said diaphragm portion, said fixed portion being thicker than said diaphragm portion; a substrate made of the same material as said silicon chip for supporting said silicon chip; a thin insulating film interposed between said silicon chip and said substrate; and a signal processing circuit formed in the surface of said fixed portion.
Claim 3
Dependent Claim
18 words
An integrated pressure sensor according to claim 1, wherein electrostatic bonding is applicable to said thin insulating film.
Claim 4
Dependent Claim
26 words
An integrated pressure sensor according to claim 2, wherein said thin insulating film is formed on said substrate, and is electrostatically bonded to said silicon chip.
Claim 5
Dependent Claim
30 words
An integrated pressure sensor according to claim 2, wherein said thin insulating film is formed on said fixed portion of said silicon chip, and is electrostatically bonded to said substrate.
Claim 6
Dependent Claim
18 words
An integrated pressure sensor according to claim 2, wherein said thin insulating film is made of borosilicate glass.
Claim 7
Dependent Claim
19 words
An integrated pressure sensor according to claim 1, wherein said thin insulating film is formed by a sputtering method.
Claim 8
Dependent Claim
25 words
An integrated pressure sensor according to claim 1, wherein a gas flow path is formed in each of said substrate and said thin insulating film.
References Cited (Backward Citations)
US4121334A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-11-04 | 1989-05-06 | 1989-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-11-04 | 1993-05-06 | 1993-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-11-04 | 1997-05-06 | 1997-11-05 | $7700.00 | Window Closed / Lapsed |