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US4550331A
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Multilayer modulation doped heterostructure charge coupled device
Assignee: Conexant Systems LLC
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Filing: 1983-07-29
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Granted: 1985-10-29
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Expires: 2003-07-29
Abstract
Abstract A charge couple device structure includes a thin layer of undoped Al x Ga 1-x As as a spacer layer between an n + doped Al x Ga 1-x As layer and an undoped GaAs layer or substrate. This multilayer, selectively doped heterostructure supports a two-dimensional electron gas at the interface of the undoped spacer layer and the GaAs layer which permits both increased dynamic range and high speed charge transfer.
Inventors
- 👤 Raymond A. Milano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:08
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
95 words
A heterojunction charge coupled device comprising: a plurality of alternating layers, each of said alternating layers comprising: an undoped, first semiconductor; a thin, epitaxial spacer layer of an undoped second semiconductor on said first semiconductor, said second semiconductor having a wider band gap than said first semiconductor; a n + doped epitaxial layer of a third semiconductor on said thin, epitaxial spacer layer, said third semiconductor having the same band gap as said second semiconductor; and a charge coupled device gate structure on said n + doped layer of the uppermost of said alternating layers.
Claim 2
Dependent Claim
95 words
A heterojunction charge coupled device comprising: a plurality of alternating layers, each of said alternating layers comprising: an undoped, first semiconductor; a thin, epitaxial spacer layer of an undoped second semiconductor on said first semiconductor, said second semiconductor having a wider band gap than said first semiconductor; a n + doped epitaxial layer of a third semiconductor on said thin, epitaxial spacer layer, said third semiconductor having the same band gap as said second semiconductor; and a charge coupled device gate structure on said n + doped layer of the uppermost of said alternating layers.
Claim 3
Dependent Claim
19 words
The device as claimed in claim 1 wherein said second and said third semiconductors are the same semiconducting material.
Claim 4
Dependent Claim
37 words
The device as claimed in claim 1 wherein said first semiconductor comprises undoped GaAs, said second semiconductor comprises undoped Al x Ga 1-x As, and said third semiconductor comprises n + doped Al x Ga 1-x As.
Claim 5
Dependent Claim
15 words
The device as claimed in claim 1 including a semi-insulating substrate of a fourth semiconductor.
Claim 6
Dependent Claim
43 words
The device as claimed in claim 4 wherein said first semiconductor comprises undoped GaAs, said second semiconductor comprises undoped Al x Ga 1-x As, said third semiconductor comprises n + doped Al x Ga 1-x As; and said fourth semiconductor comprises semi-insulating GaAs.
Claim 7
Dependent Claim
114 words
A heterojunction charge coupled device comprising: a substrate of semi-insulating GaAs; an epitaxial layer of undoped GaAs on said substrate; a thin, epitaxial spacer layer of undoped Al x Ga 1-x As on said layer of undoped GaAs; an n + doped epitaxial layer of Al x Ga 1-x As on said thin spacer layer of undoped Al x Ga 1-x As; an undoped, epitaxial positioning layer of Al x Ga 1-x As on said n + doped layer; and a charge couple device gate structure on said positioning layer, the thickness of said positioning layer being selected to optimize the efficiency of the electric field provided by said charge coupled device gate structure.
Claim 8
Dependent Claim
114 words
A heterojunction charge coupled device comprising: a substrate of semi-insulating GaAs; an epitaxial layer of undoped GaAs on said substrate; a thin, epitaxial spacer layer of undoped Al x Ga 1-x As on said layer of undoped GaAs; an n + doped epitaxial layer of Al x Ga 1-x As on said thin spacer layer of undoped Al x Ga 1-x As; an undoped, epitaxial positioning layer of Al x Ga 1-x As on said n + doped layer; and a charge couple device gate structure on said positioning layer, the thickness of said positioning layer being selected to optimize the efficiency of the electric field provided by said charge coupled device gate structure.
References Cited (Backward Citations)
US4285000A
Cited
US4424525A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-28 | 1989-04-29 | 1989-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-28 | 1993-04-29 | 1993-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-28 | 1997-04-29 | 1997-10-29 | $7700.00 | Window Closed / Lapsed |