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US4548681A
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Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te
Assignee: Monosolar Inc
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Filing: 1984-02-03
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Granted: 1985-10-22
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Expires: 2004-02-03
Abstract
Abstract Thin films of Hg1-xCdxTe with controlled x greater than 0.5 are cathodically deposited on a thin CdS film over a conductive film of ITO deposited on a glass substrate. Depositing a conductive film on the electrodeposited Hg1-xCdxTe treated to provide a Te-rich surface for a good ohmic contact forms an improved solar cell.
Inventors
- 👤 Bulent M. Basol
- 👤 Eric S. Tseng
- 👤 Dennis S. Lo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:45
CPC Classifications
H; H10; H10F; H10F71/00; C; C25; C25D; C25D9/00; C25D9/04; C25D9/08; H10F10/00; H10F10/10; H10F10/16; H10F10/162; H10F71/125; H10F71/1253; H10F71/128; H10F77/00; H10F77/10; H10F77/12; H10F77/123; H10F77/1237; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/265; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3228; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3432; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
161 words
A method of electrodepositing a film of Hg 1-x Cd x Te on a conductive substrate with controlled Hg stoichiometry using a deposition bath with a reference electrode, said conductive substrate as a cathode, and at least one anode, said at least one anode comprising tellurium, the method comprising the steps of providing an electrolyte containing 0.1 molar to 1.5 molar Cd 2+ ions, 10 -5 molar to 10 -3 molar HTeO 2 + ions, and Hg 2+ ions in a concentration selected between about 1 to 20 ppm; halide ions and an acid to adjust the pH of said electrolyte to between 1 and 3, the molar ratio of halide ions to anions derived from the acid ranging from 0.01 to 0.06; and adjusting the applied potential between said reference electrode and cathode and the Hg 2+ ion concentration in the solution so that a Hg 1-x Cd x Te compound with controlled stoichiometry is formed on said cathode surface.
Claim 2
Independent Claim
161 words
A method of electrodepositing a film of Hg 1-x Cd x Te on a conductive substrate with controlled Hg stoichiometry using a deposition bath with a reference electrode, said conductive substrate as a cathode, and at least one anode, said at least one anode comprising tellurium, the method comprising the steps of providing an electrolyte containing 0.1 molar to 1.5 molar Cd 2+ ions, 10 -5 molar to 10 -3 molar HTeO 2 + ions, and Hg 2+ ions in a concentration selected between about 1 to 20 ppm; halide ions and an acid to adjust the pH of said electrolyte to between 1 and 3, the molar ratio of halide ions to anions derived from the acid ranging from 0.01 to 0.06; and adjusting the applied potential between said reference electrode and cathode and the Hg 2+ ion concentration in the solution so that a Hg 1-x Cd x Te compound with controlled stoichiometry is formed on said cathode surface.
Claim 3
Dependent Claim
72 words
A method as defined in claim 1 wherein said substrate is formed in a preliminary process by coating a glass plate with a conductive oxide and electrodepositing a film of CdS on said coating using a bath consisting of Cd 2+ and S 2 O 3 2- and a deposition voltage kept between -360 and -460 mV with respect to a normal hydrogen reference electrode, and the bath temperature about 90° C.
Claim 4
Dependent Claim
101 words
A method as defined in claim 2 including the further steps for making photovoltaic devices comprising annealing the film of Hg 1-x Cd x Te for 8 to 10 minutes at about 400° C. to form a rectifying junction at the interface of said film of Hg 1-x Cd x Te with said film of CdS, etching the surface of said Hg 1-x Cd x Te film with an acid solution to form a nonmetal-rich surface, treating the surface of the acid etched film with a strong basic solution, and depositing on said etched and treated surface a conductive metal layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-21 | 1989-04-22 | 1989-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-21 | 1993-04-22 | 1993-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-21 | 1997-04-22 | 1997-10-22 | $7700.00 | Window Closed / Lapsed |