US4545328A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma vapor deposition film forming apparatus
Assignee: Canon Inc
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Filing: 1984-09-06
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Granted: 1985-10-08
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Expires: 2004-09-06
Abstract
Abstract In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on a circumference of a circle and reaction gas supply pipes having substantially equal supply resistance radially extend to the reactors from a gas reservoir located at the center of the circle.
Inventors
- 👤 Yasutomo Fujiyama
- 👤 Shotaro Okabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:45
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C23C14/00; C23C14/22; C23C14/56; C23C16/50; C23C16/505; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
84 words
A vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into said vacuum chamber, characterized by that center axis of said reactors are arranged on a circumference of a circle and reaction gas supply pipes having substantially equal supply resistance radially extend to said reactors from a gas reservoir located at a center of said circle.
Claim 2
Dependent Claim
84 words
A vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into said vacuum chamber, characterized by that center axis of said reactors are arranged on a circumference of a circle and reaction gas supply pipes having substantially equal supply resistance radially extend to said reactors from a gas reservoir located at a center of said circle.
Claim 3
Dependent Claim
36 words
A vapor deposition film forming apparatus according to claim 1 wherein a reaction gas flow rate control valve is provided in a reaction gas supply common pipe for supplying the reaction gas to said gas reservoir.
References Cited (Backward Citations)
US4226208A
Cited
US4369730A
Cited
DE3217708A1
Cited
GB2114160A
Cited
US4466380A
Cited
US4482419A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-07 | 1989-04-08 | 1989-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-07 | 1993-04-08 | 1993-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-07 | 1997-04-08 | 1997-10-08 | $7700.00 | Window Closed / Lapsed |