US4545034A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Contactless tite RAM
Assignee: Texas Instruments Inc
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Filing: 1983-06-17
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Granted: 1985-10-01
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Expires: 2003-06-17
Abstract
Abstract A transversly injected quasi-floating gate memory cell. A memory transistor in bulk silicon has a channel region in bulk silicon which is capacitatively coupled both to a thin polysilicon quasi-floating gate and to an overlying word line. The thin polysilicon level which comprises the floating gate is not coterminous with the channel region of the memory transistor, but the quasi-floating gate portion of the thin polysilicon layer is connected, through a polysilicon channel region, to a write bit line. The overlying word line thus addresses both the write transistor in a thin polysilicon level and also the memory transistor itself in the substrate.
Inventors
- 👤 Pallab Chatterjee
- 👤 Hisashi Shichijo
- 👤 John E. Leiss
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:39
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
203 words
A memory cell comprising: a semiconductor substrate; a read bit line in said substrate having a second conductivity type; a drain voltage line in said substrate having a second conductivity type; a memory transistor channel region at the surface of said substrate, separating said read bit line from said drain voltage line; a word line defining a gate above and capacitatively coupled to said memory transistor channel region; and a thin polysilicon layer, said thin polysilicon layer comprising a quasi-floating gate portion thereof interposed between said word line and said channel region of said memory transistor and capacitatively coupled both to said word line and said channel region of said memory transistor, and said thin polysilicon layer also comprising a polysilicon channel region, said thin polysilicon channel region comprising a dopant concentration which is less than 10 19 per cubic cm, said thin polysilicon channel region being capacitatively coupled to said word line, and said thin polysilicon layer also comprising a heavily doped write bit line portion, said polysilicon channel portion of said thin polysilicon layer being interposed between said write bit line portion and said quasi-floating gate portions respectively of said thin polysilicon layer, said quasi-floating gate having said second conductivity type.
Claim 2
Dependent Claim
203 words
A memory cell comprising: a semiconductor substrate; a read bit line in said substrate having a second conductivity type; a drain voltage line in said substrate having a second conductivity type; a memory transistor channel region at the surface of said substrate, separating said read bit line from said drain voltage line; a word line defining a gate above and capacitatively coupled to said memory transistor channel region; and a thin polysilicon layer, said thin polysilicon layer comprising a quasi-floating gate portion thereof interposed between said word line and said channel region of said memory transistor and capacitatively coupled both to said word line and said channel region of said memory transistor, and said thin polysilicon layer also comprising a polysilicon channel region, said thin polysilicon channel region comprising a dopant concentration which is less than 10 19 per cubic cm, said thin polysilicon channel region being capacitatively coupled to said word line, and said thin polysilicon layer also comprising a heavily doped write bit line portion, said polysilicon channel portion of said thin polysilicon layer being interposed between said write bit line portion and said quasi-floating gate portions respectively of said thin polysilicon layer, said quasi-floating gate having said second conductivity type.
Claim 3
Dependent Claim
17 words
The memory cell of claim 1, wherein said thin polysilicon layer is less than 2000 Angstroms thick.
Claim 4
Dependent Claim
23 words
The memory cell of claim 1, wherein said polysilicon channel region comprises a dopant concentration which at least 10 17 per cubic cm.
Claim 5
Dependent Claim
49 words
The memory cell of claim 1, wherein said thin polysilicon layer additionally comprises a read protect transistor said read to protect transistor comprising a second polysilicon channel region capacitatively coupled to said read bit line laterally interposed between said quasi-floating gate portion and said first said polysilicon channel region.
Claim 6
Dependent Claim
23 words
The memory cell of claim 1, wherein said semiconductor substrate comprises silicon and has a first conductivity type opposite said second conductivity type.
Claim 7
Dependent Claim
12 words
A memory array comprising a plurality of memory cells of claim 1.
References Cited (Backward Citations)
US4105475A
Cited
US4380804A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-30 | 1989-04-01 | 1989-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-30 | 1993-04-01 | 1993-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-30 | 1997-04-01 | 1997-10-01 | $7700.00 | Window Closed / Lapsed |