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Patent US4544540A successfully refreshed from Google Patents.
US4544540A
Expired / Lapsed
US
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Diamond single crystals, a process of manufacturing and tools for using same
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1983-06-22
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Granted: 1985-10-01
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Expires: 2003-06-22
Abstract
Abstract An artificial diamond single crystal, a process for producing it, and tools for utilizing it are disclosed. The artificial diamond crystal has at least one surface which has a rough surface formed by suppressed crystal growth at that surface. The single crystal is produced by providing a diamond synthesis reaction system comprised of a reaction chamber, a carbon source and a solvent metal arranged in contact with the carbon source. A seed crystal is provided in the reaction chamber under elevated pressures and temperatures which permit diamond to be maintained thermodynamically stable. The reaction system is heated to provide a temperature gradient in such a way that a portion of the solvent metal in contact with the carbon source is higher in temperature than a portion of the solvent metal in contact with the seed crystal. This temperature gradient causes a migration of the carbon from the higher temperature portion to the lower temperature portion using the solvent metal as a medium. This allows the carbon to precipitate and grow as diamond on the seed crystal due to the difference in solubility caused by the temperature gradient. The conditions in the reaction chamber housing are maintained so as to suppress crystal growth in at least one direction perpendicular to the direction of the temperature gradient, at the end of the solvent metal. The suppressed crystal growth provides the rough surface of the single crystal which can be connected to a tool and thus provides good adherence between the crystal and the tool.
Inventors
- 👤 Kazuo Tsuji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:21
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/02; B; B01; B01J; B01J3/00; B01J3/06; B01J3/062; C30B29/00; C30B29/02; C30B29/04; C30B9/00; B01J2203/00; B01J2203/06; B01J2203/0605; B01J2203/061; B01J2203/062; B01J2203/0625; B01J2203/065; B01J2203/0655; B01J2203/0675; B01J2203/068
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
256 words
In a process for manufacturing diamond single crystals, comprising the steps of: providing a diamond synthesis reaction system comprised of a reaction chamber housing having positioned therein a carbon source and a solvent metal arranged in contact with the said carbon source: providing a seed crystal in the reaction chamber; providing temperatures and pressures in the reaction chamber which permit diamond to be maintained thermodynamically stable in the reaction chamber housing; heating the reaction chamber to provide a temperature gradient in such a way that a portion of the solvent metal in contact with the carbon surface is higher in temperature than a portion of the solvent metal in contact with the seed crystal so as to migrate the carbon from the higher temperature portion to the lower temperature portion using the solvent metal as a medium; and allowing the carbon to precipitate and grow as a diamond on the seed crystal due to the difference in solubility caused by the temperature gradient in the reaction chamber housing, the crystal growth being maintained until the crystal growth in the reaction chamber housing in at least one direction perpendicular to the direction of the temperature gradient is suppressed at the end of the solvent metal to thereby form a rough surface which diffusibly reflects light on the crystal due to suppressed crystal growth, wherein said temperature provided is from about 1300° to 1600° C. and said pressure provided is from about 50 to 60 Kb, and the crystal growth is maintained from about 10 to 100 hours.
Claim 2
Dependent Claim
256 words
In a process for manufacturing diamond single crystals, comprising the steps of: providing a diamond synthesis reaction system comprised of a reaction chamber housing having positioned therein a carbon source and a solvent metal arranged in contact with the said carbon source: providing a seed crystal in the reaction chamber; providing temperatures and pressures in the reaction chamber which permit diamond to be maintained thermodynamically stable in the reaction chamber housing; heating the reaction chamber to provide a temperature gradient in such a way that a portion of the solvent metal in contact with the carbon surface is higher in temperature than a portion of the solvent metal in contact with the seed crystal so as to migrate the carbon from the higher temperature portion to the lower temperature portion using the solvent metal as a medium; and allowing the carbon to precipitate and grow as a diamond on the seed crystal due to the difference in solubility caused by the temperature gradient in the reaction chamber housing, the crystal growth being maintained until the crystal growth in the reaction chamber housing in at least one direction perpendicular to the direction of the temperature gradient is suppressed at the end of the solvent metal to thereby form a rough surface which diffusibly reflects light on the crystal due to suppressed crystal growth, wherein said temperature provided is from about 1300° to 1600° C. and said pressure provided is from about 50 to 60 Kb, and the crystal growth is maintained from about 10 to 100 hours.
Claim 3
Dependent Claim
63 words
A process for manufacturing diamond single crystal as claimed in claim 1, wherein crystal growth is suppressed by using a solvent metal having a shape of the cross section perpendicular to the direction of the temperature gradient such that the crystal growth in the direction of the cross section plane is suppressed by using a solvent metal of insufficient size in this direction.
Claim 4
Dependent Claim
58 words
A process for manufacturing diamond single crystals as claimed in claim 1, wherein said solvent metal has a rodlike shape and the crystal growth is conducted until the length of the crystal in the direction of the temperature gradient becomes more than one time the equivalent diameter of the diamond single crystal thereby to form a rodlike crystal.
Claim 5
Dependent Claim
31 words
A process for manufacturing diamond single crystals as claimed in claim 2, wherein the cross sectional shape of the solvent metal is the same as that of the diamond single crystal.
Claim 6
Dependent Claim
43 words
A process for manufacturing diamond single crystals as claimed in claim 2, wherein the equivalent diameter of the cross section of the solvent metal is not more than 4 mm and the crystal grows at a rate of not more than 5 mg/H.
Claim 7
Dependent Claim
55 words
A process for manufacturing diamond single crystals as claimed in claim 1, wherein the solvent metal has a rodlike shape and has a plate of the metal having a larger cross section area than the rodlike solvent metal, the plate being provided at the end of the rodlike solvent metal contacting with the carbon source.
Claim 8
Dependent Claim
33 words
A process for manufacturing diamond single crystals as claimed in claim 6, wherein the solvent metal is comprised of a plurality of the rodlike metal which are joined to the solvent metal plate.
Claim 9
Dependent Claim
42 words
A process for manufacturing diamond single crystals as claimed in claim 2, wherein the equivalent diameter of the cross section of the solvent metal is not more than 3 mm and the crystal grows at a rate of 1 to 3 mg/H.
Claim 10
Dependent Claim
46 words
A process for manufacturing diamond single crystals as claimed in claim 2, wherein the equivalent diameter of the cross section of the solvent metal is not more than 4 mm and the crystal grows at a rate of more than 3 and up to 5 mg/H.
Claim 11
Dependent Claim
31 words
A process for manufacturing diamond single crystals as claimed in claim 2, wherein the solvent metal is a metal selected from the group consisting of Fe, Ni, Co, and alloys thereof.
Claim 12
Dependent Claim
36 words
A process for manufacturing diamond single crystals as claimed in claim 2, wherein the temperature difference between the seed crystal portion and the carbon source is in the range of about 10° C. to 50° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-30 | 1989-04-01 | 1989-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-30 | 1993-04-01 | 1993-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-30 | 1997-04-01 | 1997-10-01 | $7700.00 | Window Closed / Lapsed |