Patent US511836A successfully refreshed from Google Patents.
Patent US4544445A successfully refreshed from Google Patents.
US4544445A
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US
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Process for positioning an interconnection line on an electric contact hole of an integrated circuit
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1984-03-16
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Granted: 1985-10-01
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Expires: 2004-03-16
Abstract
Abstract The invention relates to a process for the positioning of an interconnection line on an electric contact hole in an integrated circuit. According to the invention, one or more conductive layers forming a conductive covering are deposited on the complete integrated circuit. The first conductive layer is deposited by an isotropic process. The interconnection line to be produced is then masked by a resin layer, followed by the successive etching of each conductive layer. Finally, an overetching of these conductive layers is effected in the electric contact hole, followed by the elimination of the resin.
Inventors
- 👤 Pierre Jeuch
- 👤 Jean-Pierre Lazzari
- 👤 Pierre Parrens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
143 words
A process for the positioning of an interconnection line on an electric contact hole of an integrated circuit, wherein, with the electric contact hole formed, such that the contact hole edges are substantially perpendicular to the surface of the integrated surface, the following operations are performed: deposition of at least one conductive layer on the complete integrated circuit, all of these conductive layers forming a conductive covering filling the contact hole and having a substantially planar surface following deposition and in which is produced the interconnection line, the first conductive layer being deposited isotropically; formation of a resin layer on the conductive covering, so as to mask the interconnection line to be produced; etching the resin-free part of the conductive covering; overetching, within the electric contact hole that part of the conductive covering which is free from resin and; elimination of the resin.
Claim 2
Dependent Claim
143 words
A process for the positioning of an interconnection line on an electric contact hole of an integrated circuit, wherein, with the electric contact hole formed, such that the contact hole edges are substantially perpendicular to the surface of the integrated surface, the following operations are performed: deposition of at least one conductive layer on the complete integrated circuit, all of these conductive layers forming a conductive covering filling the contact hole and having a substantially planar surface following deposition and in which is produced the interconnection line, the first conductive layer being deposited isotropically; formation of a resin layer on the conductive covering, so as to mask the interconnection line to be produced; etching the resin-free part of the conductive covering; overetching, within the electric contact hole that part of the conductive covering which is free from resin and; elimination of the resin.
Claim 3
Dependent Claim
17 words
A process according to claim 1, wherein the conductive covering is constituted by a single conductive layer.
Claim 4
Dependent Claim
18 words
A process according to claim 1, wherein a dry etching process is used for etching the conductive layer.
Claim 5
Dependent Claim
18 words
A process according to claim 1, wherein the conductive covering is constituted by a plurality of conductive layers.
Claim 6
Dependent Claim
19 words
A process according to claim 4, wherein all the conductive layers are etched by means of the same mask.
Claim 7
Dependent Claim
25 words
A process according to claim 4, wherein the etching of the first conductive layer is selective with respect to that of the second conductive layer.
Claim 8
Dependent Claim
19 words
A process according to claim 4, wherein the etching of the first conductive layer is a dry etching process.
Claim 9
Dependent Claim
16 words
A process according to claim 4, wherein the first conductive layer is a doped semiconductive layer.
Claim 10
Dependent Claim
16 words
A process according to claim 4, wherein the conductive covering is constituted by two conductive layers.
Claim 11
Dependent Claim
15 words
A process according to claim 9, wherein the second conductive layer is a metal layer.
Claim 12
Dependent Claim
18 words
A process according to claim 2, wherein a dry etching process is used for etching the conductive layer.
References Cited (Backward Citations)
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US4307179A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-30 | 1989-04-01 | 1989-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-30 | 1993-04-01 | 1993-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-30 | 1997-04-01 | 1997-10-01 | $7700.00 | Window Closed / Lapsed |