Patent US4544443A successfully refreshed from Google Patents.
US4544443A
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Method for manufacturing an optical memory element
Assignee: Sharp Corp
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Filing: 1984-05-03
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Granted: 1985-10-01
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Expires: 2004-05-03
Abstract
Abstract An optical memory element includes stripe-shaped grooves formed directly on a glass substrate. To manufacture the optical memory element, a resist film is disposed on the glass substrate, and a groove pattern is formed in the resist film. A reactive ion etching is conducted through the groove pattern formed in the resist film so as to form the guide grooves in the glass substrate. After removing the resist film from the glass substrate, a magneto-optical recording layer is formed on the glass substrate.
Inventors
- 👤 Kenji Ohta
- 👤 Junji Hirokane
- 👤 Hiroyuki Katayama
- 👤 Akira Takahashi
- 👤 Hideyoshi Yamaoka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 18:21
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/24; G11B7/26; G11B11/00; G11B11/10; G11B11/105; G11B11/10582
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
88 words
A method for manufacturing an optical memory element comprising the steps of: providing a substrate; disposing a resist film on said substrate; forming a guide groove pattern latent image on said resist film; developing said guide groove pattern latent image formed on said resist film; conducting an etching operation through said developed guide groove pattern so as to form guide grooves in said substrate; removing said developed guide groove pattern from said substrate; and disposing a recording medium layer on said substrate having said guide grooves formed therein.
Claim 2
Independent Claim
88 words
A method for manufacturing an optical memory element comprising the steps of: providing a substrate; disposing a resist film on said substrate; forming a guide groove pattern latent image on said resist film; developing said guide groove pattern latent image formed on said resist film; conducting an etching operation through said developed guide groove pattern so as to form guide grooves in said substrate; removing said developed guide groove pattern from said substrate; and disposing a recording medium layer on said substrate having said guide grooves formed therein.
Claim 3
Dependent Claim
18 words
The method for manufacturing an optical memory element of claim 1, wherein said substrate is a glass substrate.
Claim 4
Dependent Claim
28 words
The method for manufacturing an optical memory element of claim 1, wherein said guide groove pattern latent image is described on said resist film by a laser beam.
Claim 5
Dependent Claim
45 words
The method for manufacturing an optical memory element of claim 1, wherein said etching operation is a reactive ion etching operation conducted under the condition of: the etching gas pressure lower than 30 mTorr; and the self-bias of the sputter electrode higher than 400 V.
Claim 6
Dependent Claim
28 words
The method for manufacturing an optical memory element of claim 1, wherein said recording medium layer is a thin-film of alloy including rare earth elements and transition metals.
Claim 7
Dependent Claim
16 words
The method for manufacturing an optical memory element of claim 5, wherein said alloy is GdNdFe.
Claim 8
Dependent Claim
16 words
The method for manufacturing an optical memory element of claim 5, wherein said alloy is GdTbFe.
Claim 9
Dependent Claim
16 words
The method for manufacturing an optical memory element of claim 5, wherein said alloy is GdCo.
Claim 10
Independent Claim
114 words
A method for manufacturing an optical memory element comprising the steps of: providing a glass substrate; disposing a resist film on said substrate; forming a guide groove pattern latent image on said resist film; developing said guide groove pattern latent image formed on said resist film; conducting an etching operation through said developed guide groove pattern so as to form guide grooves in said glass substrate; removing said developed guide groove pattern resist film from said glass substrate; disposing a first dielectric layer on said glass substrate having said guide grooves formed therein; disposing a recording medium layer on said first dielectric layer; and disposing a second dielectric layer on said recording medium layer.
Claim 11
Independent Claim
114 words
A method for manufacturing an optical memory element comprising the steps of: providing a glass substrate; disposing a resist film on said substrate; forming a guide groove pattern latent image on said resist film; developing said guide groove pattern latent image formed on said resist film; conducting an etching operation through said developed guide groove pattern so as to form guide grooves in said glass substrate; removing said developed guide groove pattern resist film from said glass substrate; disposing a first dielectric layer on said glass substrate having said guide grooves formed therein; disposing a recording medium layer on said first dielectric layer; and disposing a second dielectric layer on said recording medium layer.
Claim 12
Dependent Claim
44 words
The method for manufacturing an optical memory element of claim 9, wherein said etching operation is a reactive ion etching conducted under the condition of: the etching gas pressure lower than 30 mTorr; and the self-bias of the sputter electrode higher than 400 V.
Claim 13
Independent Claim
143 words
A method for manufacturing an optical memory element comprising the steps of: providing a substrate; forming a SiO 2 layer on said substrate; disposing a resist film on said SiO 2 layer; forming a guide groove pattern latent image on said resist film; developing said guide groove pattern latent image formed on said resist film; conducting an etching operation through said developed guide groove pattern so as to form guide grooves in said SiO 2 layer; removing said developing guide groove pattern resist film from said SiO 2 layer; disposing a first dielectric layer on said SiO 2 layer having said guide grooves formed therein, said first dielectric layer having the index of refraction higher than that of said SiO 2 layer; disposing a recording medium layer on said first dielectric layer; and disposing a second dielectric layer on said recording medium layer.
Claim 14
Independent Claim
143 words
A method for manufacturing an optical memory element comprising the steps of: providing a substrate; forming a SiO 2 layer on said substrate; disposing a resist film on said SiO 2 layer; forming a guide groove pattern latent image on said resist film; developing said guide groove pattern latent image formed on said resist film; conducting an etching operation through said developed guide groove pattern so as to form guide grooves in said SiO 2 layer; removing said developing guide groove pattern resist film from said SiO 2 layer; disposing a first dielectric layer on said SiO 2 layer having said guide grooves formed therein, said first dielectric layer having the index of refraction higher than that of said SiO 2 layer; disposing a recording medium layer on said first dielectric layer; and disposing a second dielectric layer on said recording medium layer.
Claim 15
Dependent Claim
28 words
The method for manufacturing an optical memory element of claim 11, wherein said recording medium layer is a thin-film of alloy including rare earth elements and transition metals.
Claim 16
Dependent Claim
16 words
The method for manufacturing an optical memory element of claim 12, wherein said alloy is GdTbFe.
Claim 17
Dependent Claim
16 words
The method for manufacturing an optical memory element of claim 12, wherein said alloy is TbFe.
Claim 18
Dependent Claim
16 words
The method for manufacturing an optical memory element of claim 12, wherein said alloy in GdCoFe.
Claim 19
Dependent Claim
24 words
The method for manufacturing an optical memory element of claim 12, wherein said thin-film has a thickness of about 50 Å through 400 Å.
References Cited (Backward Citations)
US3571489A
Cited
US3542453A
Cited
US3585121A
Cited
US4290075A
Cited
US4431695A
Cited
US4405677A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-30 | 1989-04-01 | 1989-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-30 | 1993-04-01 | 1993-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-30 | 1997-04-01 | 1997-10-01 | $7700.00 | Window Closed / Lapsed |