US4543489A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state image sensor
Assignee: Toshiba Corp
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Filing: 1985-02-28
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Granted: 1985-09-24
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Expires: 2005-02-28
Abstract
Abstract A solid state image sensor with a plurality of cells comprising a photoelectric converting film formed on a semiconductor substrate for photoelectrically converting incoming light rays to generate signal charge, signal charge storage areas for storing said signal charge formed in said substrate, signal charge read out areas for reading out said signal charge from said storage area, conductor electrodes for making said photoelectric converting film electrically contact with said signal charge storage areas to lead said signal charge from said photoelectric converting film to said storage areas, and series of said conductor electrodes arranged along at least two or more row lines in a matrix of said conductor electrodes being displayed in the row direction by 1/2 of the length of one electrode one from the other as viewed in the column direction.
Inventors
- 👤 Nozomu Harada
- 👤 Yukio Endo
- 👤 Okio Yoshida
- 👤 Yoshiyuki Matsunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:04
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H04; H04N; H04N25/00; H04N25/10; H04N25/11; H10F39/192
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
225 words
A solid state image sensor with a plurality of cells having picture element areas comprising: a semiconductor substrate; a photoelectric converting film formed on said semiconductor substrate for photoelectrically converting incoming light rays to signal charge; signal charge storage areas formed in said substrate for storing said signal charge; signal charge read out areas for reading out said signal charge from said storage area; and a matrix of conductor electrodes each defining all the areas corresponding to said picture element areas, said picture element areas acting as effective areas for collecting said signal charge formed in said photoelectric converting film, said conductor electrodes making said photoelectric converting film electrically contact said signal charge storage areas and conducting signal charge to said storage areas; said conductor electrodes being arranged along at least two row lines with gaps between the electrodes in each row in the matrix of said conductor electrodes, the conductor electrodes in a first row line being each displaced by the same amount relative to the conductor electrodes in a second row line adjacent said first row line as viewed in the column direction, and the conductor electrodes in said first row line each having a zone overlapping the conductor electrodes in said second row line and completely overlapping the gaps between the electrodes in the second row as viewed in the column direction.
Claim 2
Dependent Claim
225 words
A solid state image sensor with a plurality of cells having picture element areas comprising: a semiconductor substrate; a photoelectric converting film formed on said semiconductor substrate for photoelectrically converting incoming light rays to signal charge; signal charge storage areas formed in said substrate for storing said signal charge; signal charge read out areas for reading out said signal charge from said storage area; and a matrix of conductor electrodes each defining all the areas corresponding to said picture element areas, said picture element areas acting as effective areas for collecting said signal charge formed in said photoelectric converting film, said conductor electrodes making said photoelectric converting film electrically contact said signal charge storage areas and conducting signal charge to said storage areas; said conductor electrodes being arranged along at least two row lines with gaps between the electrodes in each row in the matrix of said conductor electrodes, the conductor electrodes in a first row line being each displaced by the same amount relative to the conductor electrodes in a second row line adjacent said first row line as viewed in the column direction, and the conductor electrodes in said first row line each having a zone overlapping the conductor electrodes in said second row line and completely overlapping the gaps between the electrodes in the second row as viewed in the column direction.
Claim 3
Dependent Claim
77 words
A solid state image sensor according to claim 1, further comprising at least four series of conductor electrodes, two adjacent series of said conductor electrodes forming a first set and the two series of said conductor electrodes adjacent to said first set forming a second set, and the conductor electrodes in said first set being each displaced by a specific distance with respect to the conductor electrodes in said second set as viewed in the column direction.
Claim 4
Dependent Claim
31 words
A solid state image sensor according to claim 2, wherein the specific distance of said displacement is 1/2 the length of one said conductor electrode as viewed in the column direction.
Claim 5
Dependent Claim
110 words
A solid state image sensor according to claim 1, further comprising at least six series of said conductor electrodes, two adjacent series of said conductor electrodes forming a first set, the two series of said conductor electrodes adjacent to said first set forming a second set, and the two series of said conductor electrodes adjacent to said second set excluding said first set forming a third set, said first set of conductor electrodes being displaced by a first distance with respect to said second set of conductor electrodes and also displaced by a second distance with respect to said third set of conductor electrodes as viewed in the column direction.
Claim 6
Dependent Claim
34 words
A solid state image sensor according to claim 1 further including color filtering means for allowing at least a specific color to pass therethrough, said color filtering means being arranged on said conductor electrodes.
Claim 7
Dependent Claim
49 words
A solid state image sensor according to claim 1, 2, 3 or 4, further including color filtering means for allowing at least a specific color to pass therethrough, said color filtering means being disposed on said conductor electrodes located in a specific direction between the row and column directions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-23 | 1989-03-25 | 1989-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-23 | 1993-03-25 | 1993-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-23 | 1997-03-25 | 1997-09-24 | $7700.00 | Window Closed / Lapsed |