Controlled switching of non-regenerative power semiconductors

Claim 3

The method of claim 1, wherein the another rate of step (e) is substantially equal to the first rate M of step (c).

Claim 4

The method of claim 1, wherein step (b) includes the step of: selecting the drive signal and controlled directions of change as that direction turning-on the device current flow.

Claim 5

The method of claim 3, further comprising the step of: substantially immediately changing the control electrode signal from a value greater than the saturation threshold to a value less than the conduction threshold when the drive signal changes in an opposite direction turning-off the device current flow.

Claim 6

The method of claim 1, wherein step (b) includes the step of: selecting the drive signal and controlled directions of change as the direction turning-off the device current flow.

Claim 7

The method of claim 5, further comprising the step of: substantially immediately changing the control electrode signal from a value less than the conduction threshold to a value greater than the saturation threshold when the drive signal changes in an opposite direction turning-on the device current flow.

Claim 8

The method of claim 5, wherein step (b) also includes the step of: also selecting the drive signal and controlled directions of change as that direction turning-on the device current flow.

Claim 9

The method of claim 1, wherein the device is electrically connected to a current-consuming load, and further comprising the step of: (f) feeding back a signal related to a parameter of the load to determine when each of the thresholds is reached.

Claim 10

The method of claim 8, wherein the load parameter is a load voltage, and wherein step (f) includes the step of: deriving the feedback signal from the time rate of change of the load voltage.

Claim 11

The method of claim 8, wherein the load parameter is a load current, and wherein step (f) includes the step of: deriving the feedback signal from the time rate of change of the load current.

Claim 12

The method of claim 8, wherein the control electrode signal is a control electrode current; step (c) further includes the step of: providing a current source for generating the control electrode current of substantially constant magnitude; and step (d) includes the step of diverting a portion of the current from the source, to reduce the control electrode current, responsive to the magnitude and duration of the signal fed back from the load.

Claim 13

The method of claim 8, wherein the control electrode signal is a control electrode voltage; step (c) further includes the steps of: providing a current source for generating a current of substantially constant magnitude; converting the control current to a control voltage; and providing the control voltage as the control electrode signal; and step (d) includes the step of: diverting a portion of the current from the source, to reduce the control electrode voltage converted therefrom, responsive to the magnitude and direction of the signal fed back from the load.

Claim 14

Apparatus for controlling switching between a fully-turned-on condition and a fully-turned-off condition of a non-regenerative power semiconductor device having a controllable current flow, with a conduction threshold and a saturation threshold, therethrough responsive to a control electrode signal, comprising: means for receiving a drive signal having first and second characteristics each respectively for directing the device to an associated one of said fully-turned-on and fully-turned-off conditions of the current flow therethrough; first means for providing said control electrode signal responsive to the magnitude of a signal current; means, receiving said drive signal at said receiving means and responsive to at least one of the drive signal first and second characteristics, for providing the signal current to said first means to change the control electrode signal magnitude at a first rate M and in a direction selected responsive to an associated change in direction of said drive signal; and means for providing a feedback signal from said device to said current-providing means to change the signal current therefrom to said first means and reduce the rate of change of the control electrode signal to a second rate M', less than the first rate M, when the value of the controlled current flow through said device is between said conduction and saturation thresholds.

Claim 15

Apparatus for controlling switching between a fully-turned-on condition and a fully-turned-off condition of a non-regenerative power semiconductor device having a controllable current flow, with a conduction threshold and a saturation threshold, therethrough responsive to a control electrode signal, comprising: means for receiving a drive signal having first and second characteristics each respectively for directing the device to an associated one of said fully-turned-on and fully-turned-off conditions of the current flow therethrough; first means for providing said control electrode signal responsive to the magnitude of a signal current; means, receiving said drive signal at said receiving means and responsive to at least one of the drive signal first and second characteristics, for providing the signal current to said first means to change the control electrode signal magnitude at a first rate M and in a direction selected responsive to an associated change in direction of said drive signal; and means for providing a feedback signal from said device to said current-providing means to change the signal current therefrom to said first means and reduce the rate of change of the control electrode signal to a second rate M', less than the first rate M, when the value of the controlled current flow through said device is between said conduction and saturation thresholds.

Claim 16

The apparatus of claim 13, wherein the control electrode signal is a control electrode voltage, and said first means comprises: means for converting the signal current from said current-providing means to a voltage for application to said device as said control electrode signal.

Claim 17

The apparatus of claim 13, wherein said current-providing means comprises: a source of operating potential; a source device having a multiplicity N of electrodes; and network means connected to said potential source and to (N-1) of the source device electrodes and configured to cause a flow of said signal current from a remaining electrode of the source device at said first rate, responsive to a selected one of the drive signal first and second characteristics.

Claim 18

The apparatus of claim 15, wherein said feedback means is coupled to one of said (N-1) electrodes of said source device.

Claim 19

The apparatus of claim 13, wherein said current-providing means comprises: means for controlling the semiconductor device current flow to change at said first rate M, from said fully-turned-off condition to said fully-turned-on condition, responsive to receiving said drive signal first characteristic; and means for substantially immediately changing the control electrode signal to cause said power semiconductor device to switch from said fully-turned-on condition to said fully-turned-off condition responsive to the presence of said drive signal second characteristic.

Claim 20

The apparatus of claim 13, wherein said current-providing means comprises: means for controlling the semiconductor device current flow to change at said first rate M, from said fully-turned-on condition to said fully-turned-off condition, responsive to receiving said drive signal first characteristic; and means for substantially immediately changing the control electrode signal to cause said power semiconductor device to switch from said fully-turned-off condition to said fully-turned-on condition responsive to the presence of said drive signal second characteristic.

Claim 21

The apparatus of claim 13, further comprising an electrical load connected to said power semiconductor device; and wherein said feedback signal providing means provides said feedback signal responsive to the time-rate-of-change of the load voltage.

Claim 22

The apparatus of claim 19, wherein said feedback signal providing means includes a capacitive series element.

Claim 23

The apparatus of claim 20, wherein said feedback signal providing means further includes means, in series with said capacitive element, for attenuating the magnitude of the feedback signal provided to said current-providing means.

Claim 24

The apparatus of claim 13, further comprising an electrical load connected to said power semiconductor device; and said feedback signal providing means provides said feedback signal responsive to the time-rate-of-change of the current flowing through said load.

Claim 25

The apparatus of claim 22, wherein said feedback signal providing means comprises: a sampling resistance element connected in series with said load; and a series capacitive element coupled between said sampling resistance and said current-providing means for providing said feedback signal responsive to the time-rate-of-change of said load current.

Claim 26

The apparatus of claim 22, wherein said feedback signal providing means comprises: a transducer having a primary winding connected in series with said load, and a secondary winding providing said feedback signal to said current-providing means responsive to the time-rate-of-change of the load current flowing through said primary winding.