US4540647A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the manufacture of photoconductive insulating elements with a broad dynamic exposure range
Assignee: Eastman Kodak Co
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Filing: 1984-08-20
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Granted: 1985-09-10
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Expires: 2004-08-20
Abstract
Abstract An improved method for the manufacture of a photoconductive insulating element comprising an electrically-conductive support, a barrier layer overlying the support, and a layer of doped hydrogenated amorphous silicon overlying the barrier layer, wherein the doped layer is formed by a process of plasma-induced dissociation of a gaseous mixture of a silane and a doping agent, and the dissociation is a temperature-controlled process in which deposition of a final portion of the doped layer is carried out at a temperature which is less than the temperature used in forming the initial portion of the doped layer. Control of the temperature of the deposition process in this manner provides a substantial increase in the dynamic exposure range of the element.
Inventors
- 👤 Paul M. Borsenberger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:12
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08278; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
120 words
In a method for the manufacture of a photoconductive insulating element comprising an electrically-conductive support, a barrier layer overlying said support, and a layer of doped α-Si(H) overlying said barrier layer, wherein said layer of doped α-Si(H) is formed by a process of plasma-induced dissociation of a gaseous mixture of a silane and a doping agent, the improvement which comprises controlling the temperature of said dissociation process so that an initial major portion of said layer of doped α-Si(H) is formed at a temperature in the range of from 200° C. to 400° C. and a final minor portion of said layer of doped α-Si(H) is formed at a temperature in the range of from 125° C. to 175° C.
Claim 2
Dependent Claim
120 words
In a method for the manufacture of a photoconductive insulating element comprising an electrically-conductive support, a barrier layer overlying said support, and a layer of doped α-Si(H) overlying said barrier layer, wherein said layer of doped α-Si(H) is formed by a process of plasma-induced dissociation of a gaseous mixture of a silane and a doping agent, the improvement which comprises controlling the temperature of said dissociation process so that an initial major portion of said layer of doped α-Si(H) is formed at a temperature in the range of from 200° C. to 400° C. and a final minor portion of said layer of doped α-Si(H) is formed at a temperature in the range of from 125° C. to 175° C.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein said doped α-Si(H) layer is doped with an element of Group III A or Group VA of the Periodic Table.
Claim 4
Dependent Claim
17 words
The method of claim 1 wherein said photoconductive insulating element additionally comprises a layer of intrinsic α-Si(H).
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said doped α-Si(H) layer is doped with phosphorus.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein said doped α-Si(H) layer is doped with boron.
Claim 7
Dependent Claim
28 words
The method of claim 1 wherein said doped α-Si(H) layer is doped with boron at a concentration in the range of from about 15 to about 150 ppm.
Claim 8
Dependent Claim
23 words
The method of claim 1 wherein the hydrogen concentration in said doped α-Si(H) layer is in the range of 5 to 25 percent.
Claim 9
Dependent Claim
63 words
The method of claim 1 wherein sixty to ninety percent of the total thickness of said doped α-Si(H) layer is formed at a temperature in the range of from 200° C. to 400° C. and ten to forty percent of the total thickness of said doped α-Si(H) layer is formed at a temperature in the range of from 125° C. to 175° C.
Claim 10
Dependent Claim
49 words
The method of claim 1 wherein about eighty percent of the total thickness of said doped α-Si(H) layer is formed at a temperature of about 250° C. and about twenty percent of the total thickness of said doped α-Si(H) layer is formed at a temperature of about 150° C.
Claim 11
Dependent Claim
11 words
A photoconductive insulating element produced by the method of claim 1.
Claim 12
Dependent Claim
11 words
A photoconductive insulating element produced by the method of claim 9.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-09 | 1989-03-11 | 1989-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-09 | 1993-03-11 | 1993-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-09 | 1997-03-11 | 1997-09-10 | $7700.00 | Window Closed / Lapsed |