Patent US4537651A successfully refreshed from Google Patents.
US4537651A
Expired / Lapsed
US
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Method for removing semiconductor layers from salt substrates
Assignee: RTX Corp
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Filing: 1982-11-12
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Granted: 1985-08-27
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Expires: 2002-11-12
Abstract
Abstract A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.
Inventors
- 👤 Alexander J. Shuskus
- 👤 Melvyn E. Cowher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 10:50
CPC Classifications
C; C30; C30B; C30B33/00; Y; Y10; Y10S; Y10S117/00; Y10S117/915; Y10T; Y10T156/00; Y10T156/19; Y10T156/1911
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
113 words
A method for removing a semiconductor from an alkali hailde substrate, the alkali halide having a melting point which is less than that of the semiconductor, which consists of: a. supporting the semiconductor-substrate combination on a support which is wettable by the substrate material, when molten, said support being adapted to attract and remove the substrate material from the semiconductor when the substrate is molten, with the substrate contacting the wettable support; b. heating the semiconductor-substrate-support combination to a temperature above the melting point of the substrate material but below the melting point of the semiconductor material so that the molten substrate material will be removed from the semiconductor material by capillary action.
Claim 2
Independent Claim
113 words
A method for removing a semiconductor from an alkali hailde substrate, the alkali halide having a melting point which is less than that of the semiconductor, which consists of: a. supporting the semiconductor-substrate combination on a support which is wettable by the substrate material, when molten, said support being adapted to attract and remove the substrate material from the semiconductor when the substrate is molten, with the substrate contacting the wettable support; b. heating the semiconductor-substrate-support combination to a temperature above the melting point of the substrate material but below the melting point of the semiconductor material so that the molten substrate material will be removed from the semiconductor material by capillary action.
Claim 3
Dependent Claim
14 words
A method as in claim 1 in which the support is made of tungsten.
Claim 4
Dependent Claim
13 words
A method as in claim 1 in which the substrate comprises sodium chloride.
Claim 5
Dependent Claim
13 words
A method as in claim 1 in which support is a perforated sheet.
Claim 6
Dependent Claim
26 words
A method as in claim 1 in which the support is an open cell honeycomb structure and the semiconductor-substrate combination is supported on the honeycomb walls.
Claim 7
Dependent Claim
16 words
A method as in claim 1 in which the support includes a mass of wettable fibers.
Claim 8
Dependent Claim
97 words
In the method of producing thin semiconductors by epitaxial deposition of semiconductor material on a alkali halide substrate at elevated temperature, the improvement which comprises: after deposition at elevated temperature, and without cooling the substrate significantly, contacting the substrate with a material which is wettable by the substrate material, when the substrate material is molten, and heating the semiconductor-substrate-wettable material combination to a temperature above the melting point of the substrate material, but below the melting point of the semiconductor material so that the molten substrate material will be removed from the semiconductor material by capillary action.
Claim 9
Dependent Claim
97 words
In the method of producing thin semiconductors by epitaxial deposition of semiconductor material on a alkali halide substrate at elevated temperature, the improvement which comprises: after deposition at elevated temperature, and without cooling the substrate significantly, contacting the substrate with a material which is wettable by the substrate material, when the substrate material is molten, and heating the semiconductor-substrate-wettable material combination to a temperature above the melting point of the substrate material, but below the melting point of the semiconductor material so that the molten substrate material will be removed from the semiconductor material by capillary action.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-26 | 1989-02-25 | 1989-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-26 | 1993-02-25 | 1993-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-26 | 1997-02-25 | 1997-08-27 | $7700.00 | Window Closed / Lapsed |