Patent US4536419A successfully refreshed from Google Patents.
US4536419A
Expired / Lapsed
US
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Method for forming tapered films
Assignee: Hitachi Ltd
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Filing: 1983-03-10
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Granted: 1985-08-20
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Expires: 2003-03-10
Abstract
Abstract Method for forming thin films on a substrate by using a mask through dry process wherein the substrate and the mask are moved relative to each other at least once for the formation of a thin film before the thickness of the thin film being formed on the substrate reaches a predetermined value, so that the formed thin film has an outer edge partly or entirely contoured stepwise.
Inventors
- 👤 Hitoshi Kubota
- 👤 Minoru Tanaka
- 👤 Susumu Aiuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 04:59
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/04; C23C14/042; C23C14/044
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
130 words
A method for producing multiple layers, including a tapered thin film as a lower layer thereof, on a substrate by dry process comprising: using a mask having a pattern with a smaller dimension by a pattern difference than a desired pattern of the thin film, said pattern having the smaller dimension at least in the direction of the taper to be formed; carrying out a relative motion between said substrate and said mask disposed close to the substrate within the range of said desired pattern, in the direction of said taper to be formed; forming a thin film on said substrate by vapor deposition in association with said relative motion to thereby produce a substantially-tapered, vapor-deposited thin film; and forming at least one layer on said substantially-tapered, vapor-deposited thin film.
Claim 2
Independent Claim
130 words
A method for producing multiple layers, including a tapered thin film as a lower layer thereof, on a substrate by dry process comprising: using a mask having a pattern with a smaller dimension by a pattern difference than a desired pattern of the thin film, said pattern having the smaller dimension at least in the direction of the taper to be formed; carrying out a relative motion between said substrate and said mask disposed close to the substrate within the range of said desired pattern, in the direction of said taper to be formed; forming a thin film on said substrate by vapor deposition in association with said relative motion to thereby produce a substantially-tapered, vapor-deposited thin film; and forming at least one layer on said substantially-tapered, vapor-deposited thin film.
Claim 3
Dependent Claim
17 words
A method according to claim 1, wherein said relative motion is carried out intermittently during the vapor-deposition.
Claim 4
Dependent Claim
17 words
A method according to claim 1, wherein said relative motion is carried out continuously during the vapor-deposition.
Claim 5
Independent Claim
174 words
A method for forming multiple layers, including a thin film of a desired pattern as a lower layer on a substrate, by using a mask through dry process, comprising the steps of: placing said mask and said substrate with a predetermined distance therebetween in opposed relation with each other, said mask having an aperture pattern smaller by a pattern difference (w) than at least one dimension of said desired pattern of the thin film; effecting a first one of multiple depositions on the substrate through said mask; changing the relative position between the mask and the substrate, by a distance smaller than said pattern difference, in the direction of the at least one thin film pattern dimension, each time each of the multiple depositions is completed; effecting the succeeding one of said multiple depositions on the substrate, whereby the thin film, having a tapered edge in the direction of said thin film pattern dimension, is formed by said multiple depositions; and forming at least one layer on said thin film having a tapered edge.
Claim 6
Independent Claim
174 words
A method for forming multiple layers, including a thin film of a desired pattern as a lower layer on a substrate, by using a mask through dry process, comprising the steps of: placing said mask and said substrate with a predetermined distance therebetween in opposed relation with each other, said mask having an aperture pattern smaller by a pattern difference (w) than at least one dimension of said desired pattern of the thin film; effecting a first one of multiple depositions on the substrate through said mask; changing the relative position between the mask and the substrate, by a distance smaller than said pattern difference, in the direction of the at least one thin film pattern dimension, each time each of the multiple depositions is completed; effecting the succeeding one of said multiple depositions on the substrate, whereby the thin film, having a tapered edge in the direction of said thin film pattern dimension, is formed by said multiple depositions; and forming at least one layer on said thin film having a tapered edge.
Claim 7
Dependent Claim
47 words
A method according to claim 4, wherein each of the succeeding ones of the multiple depositions is performed after changing the relative position between the mask and substrate, whereby the thin film having a stepped edge in the direction of the thin film pattern dimension is formed.
Claim 8
Dependent Claim
30 words
A method according to claim 5, wherein the relative positioning is changed to provide n total multiple depositions, with the relative position changed by a distance ##EQU1## for each deposition.
Claim 9
Dependent Claim
28 words
A method according to claim 6, wherein the thin film has a total thickness (X), with the partial thickness formed at each of said multiple depositions being ##EQU2##
Claim 10
Dependent Claim
15 words
A method according to claim 4, wherein the multiple depositions are performed by vapor deposition.
Claim 11
Dependent Claim
23 words
A method according to claim 4, wherein the taper angle between the substrate plane and the formed thin film is at most 70°.
Claim 12
Dependent Claim
15 words
A method according to claim 9, wherein the predetermined distance is at most about 100μ.
Claim 13
Dependent Claim
58 words
A method according to claim 4, wherein the mask has an aperture pattern smaller by pattern differences than two dimensions of said desired pattern of the thin film, and wherein the relative position between the mask and substrate is changed in the directions of each of said two dimensions, whereby the thin film is tapered in two directions.
Claim 14
Dependent Claim
40 words
A method according to claim 1, wherein two layers are formed on said substantially-tapered, vapor deposited thin film, with a first layer being formed on said substantially-tapered vapor deposited film and a second layer being formed on said first layer.
Claim 15
Dependent Claim
39 words
A method according to claim 12, wherein said substantially-tapered, vapor-deposited thin film is made of an electrically conductive material, said first layer is made of an insulating material, and said second layer is made of an electrically conductive material.
Claim 16
Dependent Claim
30 words
A method according to claim 13, wherein the first layer is also made by said using a mask, said carrying out a relative motion and said forming a thin film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-19 | 1989-02-18 | 1989-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-19 | 1993-02-18 | 1993-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-19 | 1997-02-18 | 1997-08-20 | $7700.00 | Window Closed / Lapsed |